Band offsets of wide-band-gap oxides and implications for future electronic devices, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.18, issue.3, p.1785, 2000. ,
DOI : 10.1116/1.591472
Thermodynamic stability of binary oxides in contact with silicon, Journal of Materials Research, vol.236, issue.11, p.2757, 1996. ,
DOI : 10.1016/0022-5088(68)90204-X
A Thermodynamic Approach to Selecting Alternative Gate Dielectrics, MRS Bulletin, vol.20, issue.03, p.198, 2002. ,
DOI : 10.1016/0038-1098(71)90643-0
Effect of Oxide Defect Structure on the Electrical Properties of ZrO 2, J. Am. Chem. Soc, vol.55, p.439, 1972. ,
High-K dielectrics for the gate stack, Journal of Applied Physics, vol.100, issue.5, p.51610, 2006. ,
DOI : 10.1063/1.2336996
Variation in the fixed charge density of SiO[sub x]/ZrO[sub 2] gate dielectric stacks during postdeposition oxidation, Applied Physics Letters, vol.77, issue.12, p.1885, 2000. ,
DOI : 10.1063/1.1310635
High dielectric constant oxides, The European Physical Journal Applied Physics, vol.28, issue.3, p.265, 2004. ,
DOI : 10.1051/epjap:2004206
Introducing crystalline rare-earth oxides into Si technologies, physica status solidi (a), vol.3, issue.4, p.695, 2008. ,
DOI : 10.1002/pssa.200723509
Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films, Ceramics International, vol.34, issue.4, p.957, 2008. ,
DOI : 10.1016/j.ceramint.2007.09.072
Synthesis and properties of epitaxial electronic oxide thin-film materials Croissance epitaxiale d'oxydes high-k sur silicium pour CMOS avancé: LaAlO 3, Mat. Sci. Eng. R, vol.43, issue.3, 2004. ,
Epitaxial growth of LaAlO 3 ,
URL : https://hal.archives-ouvertes.fr/tel-00201791
Effective Passivation of Intrinsic Dangling Bonds at the Interface of Single Crystalline Gd 2 O 3 and Si(100) ,
Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application, Applied Physics Letters, vol.89, issue.14, p.143514, 2006. ,
DOI : 10.1063/1.2360209
Electroceramics, Reports on Progress in Physics, vol.52, issue.2, p.123, 1989. ,
DOI : 10.1088/0034-4885/52/2/001
A ferroelectric oxide made directly on silicon, Science, vol.324, p.367, 2009. ,
Development by pressure of polar electricity in hemihedral crystals with inclined faces, Bull. Soc. Min. de France, vol.3, p.90, 1880. ,
Measurement of piezoelectric coefficients of ferroelectric thin films, Journal of Applied Physics, vol.76, issue.3, p.1764, 1994. ,
DOI : 10.1063/1.357693
Piezoelectric Ceramics, Journal of the American Ceramic Society, vol.36, issue.11, p.30, 1971. ,
DOI : 10.1143/JPSJ.7.333
Principles and Applications of Ferroelectric and Related Materials, 1977. ,
: a three-dimensional visualization system for electronic and structural analysis, Journal of Applied Crystallography, vol.41, issue.3, p.653, 2008. ,
DOI : 10.1107/S0021889808012016
Ferroelectric crystals, 1962. ,
Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics, Reports on Progress in Physics, vol.61, issue.9, p.1267, 1998. ,
DOI : 10.1088/0034-4885/61/9/002
Magnetoresistance measurements on the magnetic semiconductor, p.362, 1989. ,
Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films, Science, vol.264, issue.5157, p.413, 1994. ,
DOI : 10.1126/science.264.5157.413
III-V/Si integration, Proceedings of the 2009 international conference on Compilers, architecture, and synthesis for embedded systems, CASES '09, 2009. ,
DOI : 10.1145/1629395.1629399
GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy, Journal of Crystal Growth, vol.208, issue.1-4 ,
DOI : 10.1016/S0022-0248(99)00428-5
GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer, IEEE Electron Device Lett, vol.23, p.300, 2002. ,
Epitaxial growth of semiconductors on SrTiO3 substrates, Journal of Crystal Growth, vol.229, issue.1-4, p.137, 2001. ,
DOI : 10.1016/S0022-0248(01)01108-3
Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems, Physical Review B, vol.80, issue.15, p.155308, 2009. ,
DOI : 10.1103/PhysRevB.80.155308
High-k/Ge MOSFETs for future nanoelectronics, Materials Today, vol.11, issue.1-2, 2008. ,
DOI : 10.1016/S1369-7021(07)70350-4
URL : http://doi.org/10.1016/s1369-7021(07)70350-4
High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique, IEEE Electron Device Letters, vol.26, issue.4, p.243, 2005. ,
DOI : 10.1109/LED.2005.844699
Ge and III/V as Enabling Materials for Future CMOS Technologies, ECS Transactions, p.511, 2006. ,
DOI : 10.1149/1.2355848
Current Challenges in Ge MOS Technology, ECS Transactions, p.371, 2006. ,
DOI : 10.1149/1.2356297
Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO 2, Appl. Phys. Lett, vol.85, issue.11, 1928. ,
The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies? ,
URL : https://hal.archives-ouvertes.fr/hal-00391979
Germanium-on-insulator (GeOI) substrates-A novel engineered substrate for future high performance devices, Mater. Sci. Semicond. Process, vol.9, p.444, 2006. ,
Direct integration of III???V compound semiconductor nanostructures on silicon by selective epitaxy, Nanotechnology, vol.20, issue.3, p.35304, 2009. ,
DOI : 10.1088/0957-4484/20/3/035304
Heterogeneous Integration of Enhancement Mode In0.7Ga0.3As Quantum Well Transistor on Silicon Substrate using Thin (<2 µm) Composite Buffer Architecture for High-Speed and Low-voltage gate dielectrics on sulfur-passivated germanium, Appl. Phys. Lett, vol.89, p.112905, 2006. ,
Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation, Applied Physics Letters, vol.93, issue.7, p.73504, 2008. ,
DOI : 10.1063/1.2966367
Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density, IEEE Electron Device Letters, vol.29, issue.4, p.328, 2008. ,
DOI : 10.1109/LED.2008.918272
Band offset and structure of SrTiO3???/Si(001) heterojunctions, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.19, issue.3, p.934, 2001. ,
DOI : 10.1116/1.1365132
Impact of oxygen supply during growth on the electrical properties of crystalline Gd 2 O 3 thin films on Si(001) ,
Characterization of Gd 2 O 3 films deposited on Si(100) by Electron Beam Evaporation, J. Electrochem. Soc, vol.148, p.29, 2001. ,
ALD-Grown Rare Earth Oxides for Advanced Gate Stacks, ECS Trans, vol.13, p.77, 2008. ,
Effect of Oxygen for Ultra-Thin La2O3 Film Deposition, ECS Transactions, p.425, 2006. ,
DOI : 10.1149/1.2355731
Structural characteristics of Y 2 O 3 films grown on oxidized Si(111) surface, J. Appl ,
by pulsed-laser ablation, Appl. Phys. Lett, vol.76, issue.111, p.1935, 2000. ,
Praseodymium silicide formation at the Pr2O3/Si interface, Applied Surface Science, vol.255, issue.3, p.758, 2008. ,
DOI : 10.1016/j.apsusc.2008.07.063
Structure and strain relaxation mechanisms of ultrathin epitaxial Pr 2 O 3 films on Si(111) Initial growth analysis of Si overlayers on cerium oxide layers, J. Appl. Phys. J. Vac. Sci, vol.97, issue.73 ,
Epitaxial silicon grown on CeO[sub 2]/Si(111) structure by molecular beam epitaxy, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.16, issue.5, p.2686, 1998. ,
DOI : 10.1116/1.590257
Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as High k Gate Dielectric, ECS Transactions, p.141, 2007. ,
DOI : 10.1149/1.2727397
Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr 2 O 3 , Sm 2 O 3 , Gd 2 O 3 , and Dy 2 O 3 ), J. Appl. Phys, vol.93, p.6393, 2003. ,
Properties of high-k gate dielectrics ,
Epitaxial praseodymium oxide: a new high-K dielectric, Solid-State Electronics, vol.47, issue.12, p.2161, 2003. ,
DOI : 10.1016/S0038-1101(03)00190-4
Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation, Microscopy and Microanalysis, vol.13, issue.S03, p.304, 2007. ,
DOI : 10.1017/S1431927607081524
CMOS integration of epitaxial Gd2O3 high-k gate dielectrics, Solid-State Electronics, vol.50, issue.6, p.979, 2006. ,
DOI : 10.1016/j.sse.2006.04.018
Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application, Applied Physics Letters, vol.88, issue.17, p.172107, 2006. ,
DOI : 10.1063/1.2198518
Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin films, Applied Physics Letters, vol.93, issue.18, p.182907, 2008. ,
DOI : 10.1063/1.3009206
Crystal structure and strain state of molecular beam D. Sarid Comparative study of Sr and Ba adsorption on Si(100), Appl. Surf. Sci, vol.181, p.103, 2001. ,
Structure, bonding, and band offsets of (100)SrTiO3???silicon interfaces, Applied Physics Letters, vol.83, issue.26, p.5497, 2003. ,
DOI : 10.1063/1.1637715
The interface between silicon and a high-k oxide, Nature, vol.427, issue.6969, p.53, 2004. ,
DOI : 10.1038/nature02204
epitaxial interface: A density functional theory study, Physical Review B, vol.70, issue.16, p.165319, 2004. ,
DOI : 10.1103/PhysRevB.70.165319
A theoretical study of Sr-induced reconstructions of the Si (001) surface, J. Appl. Phys, vol.103, p.103710, 2008. ,
Role of Strontium in Oxide Epitaxy on Silicon (001), Physical Review Letters, vol.101, issue.10, p.105503, 2008. ,
DOI : 10.1103/PhysRevLett.101.105503
Epitaxial oxide thin films on Si(001), J. Vac ,
Field effect transistors with SrTiO3 gate dielectric on Si, Applied Physics Letters, vol.76, issue.10, p.1324, 2000. ,
DOI : 10.1063/1.126023
The interface of epitaxial SrTiO 3 on silicon: in situ and ex situ studies, Appl. Phys. Lett, vol.82, p.203, 2003. ,
Two-dimensional growth of high-quality strontium titanate thin films on Si, J. Appl. Phys, vol.93, p.4521, 2003. ,
interface, Physical Review B, vol.68, issue.12, p.125323, 2003. ,
DOI : 10.1103/PhysRevB.68.125323
URL : https://hal.archives-ouvertes.fr/hal-01497439
Heteroepitaxy of SrTiO3 on vicinal Si(001): Growth and kinetic effects, Journal of Applied Physics, vol.96, issue.6, p.3413, 2004. ,
DOI : 10.1063/1.1778214
Structural properties of epitaxial SrTiO 3 thin films grown by molecular beam epitaxy on Si(001), J. Appl. Phys, vol.100, p.124109, 2006. ,
Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity, Appl. Phys. Lett, vol.87, p.262905, 2005. ,
Direct observation of atomic disordering at the SrTiO 3 /Si interface due to oxygen diffusion Hetero-epitaxy of SrTiO3 on Si and control of the interface Interfacial and microstructural properties of SrTiO 3 thin films grown on Si(001) substrates Interface structure and phase of epitaxial SrTiO3(110) thin films grown directly on silicon, Appl. Phys. Lett. Thin Solid Films J. Appl. Phys. Appl. Phys. Lett, vol.80, issue.87, pp.1803-6332, 2002. ,
Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si(001), J. Appl. Phys, vol.100, p.14912, 2006. ,
Atomic structure of the interface between SrTiO 3 thin films and Si(001) substrates, Appl. Phys. Lett, vol.93, issue.117, p.101913, 2008. ,
Imaging the Phase Separation in Atomically Thin Buried SrTiO3 Layers by Electron Channeling, Interfacial structure of epitaxial SrTiO 3 on Si: experiments and simulations, p.36101, 2008. ,
Anomalous lattice expansion of coherently strained SrTiO 3 thin films grown on 133 ,
Epitaxial growth of Pb(Zr 0.2 Ti 0.8 )O 3 on Si and its nanoscale piezoelectric properties, Appl. Phys. Lett, vol.78, p.2034, 2001. ,
The properties of epitaxial PMNT thin films grown on SrTiO 3 substrates Production and characterization of composite relaxor ferroelectric multilayer structures Ultra high strain and piezoelectric behavior in relaxor based ferroelectric single crystals Structural properties of 0 thin films with two in-plane orientations on silicon substrates with yttria-stabilized zirconia and YBa 2 Cu 3 O 7-? as buffer layers, Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 films on Si and SrTiO 3 substrates Epitaxial colossal magnetoresistive La 0.67 (Sr,Ca) 0.33 MnO 3 films on Si The effect of strained Si 1?x Ge x and Si 1?y C y layers for La 0.75 Sr 0.25 MnO 3 films grown on oxide-buffered Si substrates, pp.142904-123, 1997. ,
Properties of La 0.75 Sr 0.25 MnO 3 films grown on Si substrate with Si 1-x Ge x and Si 1-y C y buffer layers Epitaxial growth of magnetoresistive (00h), (0hh), and (hhh) La 2/3 Sr 1/3 MnO 3 thin films on (001)Si substrates, Thin Solid Films Appl. Phys. Lett, vol.515, issue.144, p.1743, 1999. ,
Growth of colossal magnetoresistance thin films on silicon Integration of epitaxial colossal magnetoresistive films onto Si(100) using SrTiO 3 as a template layer, Appl. Phys. Lett. Appl. Phys. Lett, vol.69, issue.86, pp.1005-012503, 1996. ,
Ferromagnetic properties of epitaxial manganite films on SrTiO 3 /Si heterostructures, J ,
Silicon in functional epitaxial oxides: A new group of nanostructures, Microelectron. J, vol.100, issue.148, p.33903, 2006. ,
Single-crystalline Si grown on single-crystalline Gd 2 O 3 by modified solid-phase epitaxy, Thin Solid Films, vol.518, p.2546, 2010. ,
Epitaxial germanium-on-insulator grown on (001) Si, Microelectron. Eng, vol.84, issue.150, p.2328, 2007. ,
The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrOSi(111) support systems, J. Appl. Phys, vol.2, issue.151, p.84110, 2008. ,
Spontaneous compliance of the InP/SrTiO3 heterointerface, Appl. Phys. Lett, vol.92, p.241907, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-00356956
Competition between InP and In 2 O 3 islands during the growth of InP on SrTiO 3, Appl. Phys. Lett, vol.104, issue.153, p.33509, 2008. ,
Influence of the surface reconstruction on the growth of InP on SrTiO 3 (001), J. Cryst. Growth, vol.311, p.1042, 2009. ,
Epitaxial silicon and germanium on buried insulator heterostructures and devices, Appl. Phys. Lett, vol.83, p.5443, 2003. ,
Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems, Phys. Rev. B, vol.91, issue.157, p.241912, 2007. ,
Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon, New J. Phys, vol.10, issue.158, p.113004, 2008. ,
159 Thesis of G. Delhaye Oxydes crystallins à haute permittivité diélectrique épitaxiés sur silicium: SrO et SrTiO 3 Etude par photoémission (XPS et XPD) d'hétérostructures d'oxydes fonctionnels épitaxiés sur silicium Hétérostructures et dispositifs microélectronique à base d'oxydes high-k préparés sur silicium par EJM high-k préparés sur silicium par EJM Electrical measurement issues for alternative gate stack systems " , tiré de " High dielectric constant materials Ultra fast full quantum Capacitance and Current-Voltage calculations of MOS capacitors, Proceedings SISPAD, IEEE, pp.1615-521, 2004. ,
Comparison of Modeling Approaches for the Capacitance?Voltage and ,
Characterization of High-? Gate Stacks in Meatl-Oxide-Semiconductor Capacitors Semiconductor Material and Device characterization Chapter MOS Physics and Technology MOS Capacitance Measurements for High-Leakage Thin Dielectrics Low temperature silicon surface cleaning by HF etching/Ultraviolet ozone cleaning method (I), IEEE Transactions on Electron Devices J. J. Appl. Phys, vol.69, issue.28, pp.285-319, 1982. ,
Tip size effect on the appearance of a STM image for complex surfaces: Theory versus experiment for Si(111)-(7×7), Phys. Rev. B, vol.70, p.73312, 2004. ,
Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO 3 films, J. Vac. Sci. Technol. B, vol.20, p.1071, 2002. ,
Development of integrated heterostructures on silicon by MBE A thermodynamic approach to selecting alternative gate dielectrics Soft phonon modes and the 110K phase transition in SrTiO 3 Investigating alternative gate dielectrics: A theoretical approach, Lines and A. M. Glass Principles and applications of ferroelectrics and related materials, pp.125323-198, 1968. ,
SrTiO 3 (001) (2×1) reconstructions: First-principles calculation of surface energy and atomic structure compared with scanning tunneling microscopy images, Phys. Rev. B, vol.226, issue.19, pp.57-085415, 2001. ,
Atomic control of SrTiO 3 crystal surface, Science, vol.266, p.1540, 1994. ,
Preparation of thermally stable TiO 2 terminated STO (100) substrate surfaces, Appl. Phys. Lett, vol.85, p.272, 2004. ,
in air studied with synchrotron X-rays SrTiO 3 (001) reconstructions: the (2×2) to c(4×4) transition, surface structure of SrTiO, 2005. ,
Surface structure of SrTiO 3 (001) SrTiO 3 (001) surface structures under oxidizing conditions Oxydes crystallins à haute permittivité diélectrique épitaxiés sur silicium: SrO et SrTiO 3 Adsorption of atomic oxygen (N 2 O) on a clean Si (100) surface and its influence on the surface state density: A comparison with O 2, Phys. Rev. B Surf.Sci. France Surf. Sci, vol.76, issue.180, p.565, 1987. ,
The interface of epitaxial SrTiO 3 on silicon: in situ and ex situ studies, Appl. Phys. Lett, vol.82, issue.203, 2003. ,
Structural properties of epitaxial SrTiO 3 thin films grown by molecular beam epitaxy on Si(001) Elastic Constants of Strontium Titanate Growth-related stress and surface morphology in homoepitaxial SrTiO 3 films Strain relaxation during in situ growth of SrTiO 3 thin films, J. Appl. Phys. Phys. Rev. Appl. Phys. Lett. Appl. Phys. Lett. J. Appl. Phys, vol.100, issue.78, pp.124109-4592, 1963. ,
Dielectric, infrared, and Raman response of undoped SrTiO 3 ceramics: Evidence of polar grain boundaries High-pressure Raman spectroscopy of ZrSiO 4 : Observation of the zircon to scheelite transition at 300 K American Mineralogist, Phys. Rev. B, vol.64, issue.91, pp.184111-245, 1993. ,
Raman study of oxygen reduced and re-oxidized strontium titanate, Physical Review B, vol.76, issue.2 ,
DOI : 10.1103/PhysRevB.76.024303
Soft Phonon Modes and the 110°K Phase Transition in SrTiO 3 Characteristic Structural Phase Transition in Perovskite-Type Compounds Tunability of the dielectric response of epitaxially strained SrTiO3 from first principles Strain Phase Diagram and Domain Orientation in SrTiO 3 Thin Films The elements and native oxides, XPS International, pp.24303-024102, 1968. ,
MBE of SrTiO 3 on Si(001): early stages of the growth and strain relaxation Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials, Science Appl. Phys. Lett. Phys. Rev. Lett, vol.324, issue.62, pp.367-062902, 1411. ,
Two-dimensional growth of high-quality strontium titanate thin films on Si, Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide, pp.4521-468, 2001. ,
Characteristic Structural Phase Transition in Perovskite-Type Compounds, Physical Review Letters, vol.21, issue.12, 1968. ,
DOI : 10.1103/PhysRevLett.21.814
The cubic to tetragonal phase transition in SrTiO 3 single crystals near its surface under internal and external strains, 2010) 66 L. Cao, E. Sozontov and J. Zegehagen, 71901. ,
Pressure-temperature phase diagram of SrTiO 3 up to 53 GPa Study Tunability of the dielectric response of epitaxially strained SrTiO 3 from first principles Strain Phase Diagram and Domain Orientation in SrTiO 3 Thin Films Phase transitions and strain-induced ferroelectricity in SrTiO 3 epitaxial thin films, Phys. Rev. B Phys. Rev. B Phys. Rev. Lett. Phys. Rev. B, vol.181, issue.61, pp.54115-024102, 2000. ,
Room-temperature ferroelectricity in strained SrTiO 3, Nature, vol.430, p.758, 2004. ,
Elastic anomaly for SrTiO 3 thin films grown on Si(001), Phys. Rev. B, vol.70, p.201403, 2004. ,
by kinetically controlled sequential deposition, Physical Review B, vol.73, issue.2, p.24112, 2006. ,
DOI : 10.1103/PhysRevB.73.024112
Crystalline Oxides on Silicon: The First Five Monolayers, Physical Review Letters, vol.81, issue.14, p.3014, 1998. ,
DOI : 10.1103/PhysRevLett.81.3014
The Interface Phase and the Schottky Barrier for a Crystalline Dielectric on Silicon, Science, vol.300, issue.5626, p.1726, 2003. ,
DOI : 10.1126/science.1083894
and thin film alkaline earth silicides on silicon, Applied Physics Letters, vol.63, issue.20, p.2818, 1993. ,
DOI : 10.1063/1.110297
First step towards the growth of single-crystal oxides on Si: Formation of a two-dimensional crystalline silicate on Si(001), Applied Physics Letters, vol.79, issue.22 ,
DOI : 10.1063/1.1415372
Epitaxial growth of SrO on Si (001): Chemical and thermal stability, J. Vac. Sci ,
Oxydes à forte permittivité diélectrique pour la réalisation de diélectrique de grille dans les MOSFET, Project Nano, 2008. ,
Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon, Applied Physics Letters, vol.59, issue.7 ,
DOI : 10.1063/1.105341
Surface and interface chemical composition of thin epitaxial SrTiO 3 and BaTiO 3 films: Photoemission investigation, J. Appl ,
Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.20, issue.4, p.1332, 2002. ,
DOI : 10.1116/1.1482710
mixtures on Si(100), Physical Review B, vol.72, issue.7, pp.75410-75411, 2005. ,
DOI : 10.1103/PhysRevB.72.075410
Gitterkonstanten von Mischkristallen Etude par photoémission (XPS et XPD) d'hétérostructures d'oxydes fonctionnels épitaxiés sur silicium, Z. Phys. Thesis of M. El. Kazzi France, vol.517, issue.87, 1921. ,
Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures, Applied Physics Letters, vol.88, issue.15 ,
DOI : 10.1063/1.2192979
1) Accommodation and growth mode, IV.5.2.2) Epitaxial relationship and evidence for twin formation in the Ge layer, 0195. ,
A review of gate tunneling current in MOS devices, Microelectronics Reliability, vol.46, issue.12, p.1939, 2006. ,
DOI : 10.1016/j.microrel.2005.12.006
Hétérostructures et dispositifs microélectronique à base d'oxydes high-? préparés sur silicium par EJM, 2008. ,
Effect of the oxygen concentration on the properties of Gd2O3 thin films, Journal of Crystal Growth, vol.265, issue.3-4, pp.548-553, 2004. ,
DOI : 10.1016/j.jcrysgro.2004.02.095
Molecular Beam Deposition (MBD) and Characterisation of High-? Material as Alternative Gate Oxides for MOS-Technology, UNIVERSITÄT DER BUNDESWEHR MÜNCHEN, 2005. ,
Croissance epitaxiale d'oxydes high k sur silicium pour CMOS avancé : LaAlO 3 , Gd 2 O 3 , and ?-Al 2 O 3, 2007. ,
Room-temperature ferroelectricity in strained SrTiO 3, Nature, vol.430, p.758, 2004. ,
Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films, Science, vol.306, p.1005, 2004. ,
A ferroelectric oxide made directly on silicon, Science, vol.324, p.367, 2009. ,
Electronic structure of electron doped SrTiO 3 : SrTiO 3-? and ,
Pulsed laser deposition of superconducting Nb-doped strontium titanate thin films, Applied Physics Letters, vol.72, issue.23, p.3065, 1998. ,
DOI : 10.1063/1.121542
Study of the electronic conduction mechanism in Nb-doped SrTiO 3 thin films with Ir and Pt electrodes ,
Rectifying characteristics and transport behavior of SrTiO3?????(110)???p-Si (100) heterojunctions, Applied Physics Letters, vol.91, issue.6, p.62105, 2007. ,
DOI : 10.1063/1.2767999
Ferrolectric Crystals, 1962. ,
High dielectric constant and frozen macroscopic polarization in dense nanocrystalline BaTiO 3 ceramics, Phys. Rev. B, pp.73-064114, 2006. ,
Coexistence of ferroelectricity and ferromagnetism in BiFeO3???BaTiO3 thin films at room temperature, Applied Physics Letters, vol.75, issue.4, p.555, 1999. ,
DOI : 10.1063/1.124420
Epitaxial growth and dielectric properties of BaTiO 3 films on Pt electrodes by reactive evaporation, J. Appl. Phys, vol.76, p.7833, 1994. ,
Dielectric Properties of (Ba, Sr)TiO 3 Thin Films and their Correlation with Oxygen Vacancy Density ,
annealing, Journal of Applied Physics, vol.86, issue.6, p.3213, 1999. ,
DOI : 10.1063/1.371192
thin films, Philosophical Magazine A, vol.84, issue.10, p.2461, 1999. ,
DOI : 10.1143/JJAP.36.276
URL : https://hal.archives-ouvertes.fr/hal-00482784
Evolution of dislocation arrays in epitaxial BaTiO3 thin films grown on (100) SrTiO3, Applied Physics Letters, vol.84, issue.17, p.3298, 2004. ,
DOI : 10.1063/1.1728300
Critical thickness of BaTiO3 film on SrTiO3 (001) evaluated by reflection high-energy electron diffraction, Materials Letters, vol.50, issue.2-3, p.134, 2001. ,
DOI : 10.1016/S0167-577X(00)00430-4
Structural study of epitaxial BaTiO 3 crystals, J. Phys. Soc. Jpn, vol.61, p.2194, 1992. ,
Thermal Expansion Data. VIII. Complex Oxides, ABO 3 , the Perovskites, Br ,
Microscopic study of oxygen-vacancy defects in ferroelectric perovskites, Physical Review B, vol.57, issue.22, p.13961, 1998. ,
DOI : 10.1103/PhysRevB.57.R13961
Thickness and oxygen pressure dependent structural characteristics of BaTiO3 thin films grown by laser molecular beam epitaxy, Journal of Applied Physics, vol.87, issue.10, p.7442, 2000. ,
DOI : 10.1063/1.373007
Relationship between Lattice Deformation and Polarization in BaTiO 3, Jpn. J. Appl. Phys, vol.40, p.4809, 2001. ,
Ferroelectrics, p.29, 1987. ,
Production and characterisation of composite relaxor ferroelectric multi-layer structures, Journal of the European Ceramic Society, vol.19, issue.10, p.1859, 1999. ,
DOI : 10.1016/S0955-2219(99)00002-3
Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals, Journal of Applied Physics, vol.82, issue.4, p.1804, 1997. ,
DOI : 10.1063/1.365983
PMNT films for integrated capacitors, Solid-State Electronics, vol.47, issue.10, p.1631, 2003. ,
DOI : 10.1016/S0038-1101(03)00173-4
Critical issues of complex epitaxial oxide growth and integration with silicon by molecular beam epitaxy, 2002. ,
Piezoelectric Ceramics, Journal of the American Ceramic Society, vol.36, issue.11, 1971. ,
DOI : 10.1143/JPSJ.7.333
Thousandfold change in resistivity in magnetroresistive La-Ca-Mn-O films Giant negative magnetoresistance in perovskite-like La 2/3 Ba 1/3 MnO x ferromagnetic films, Science Phys. Rev. Lett, vol.264, issue.71, p.2331, 1993. ,
-Shells in the Transition Metals. II. Ferromagnetic Compounds of Manganese with Perovskite Structure, Physical Review, vol.82, issue.3, p.403, 1951. ,
DOI : 10.1103/PhysRev.82.403
URL : https://hal.archives-ouvertes.fr/jpa-00225289
Phase Separation Scenario for Manganese Oxides and Related Materials, Science, vol.283, issue.5410, p.2034, 1999. ,
DOI : 10.1126/science.283.5410.2034
Percolative phase separation underlies colossal magnetoresistance in mixed-valent manganites, Nature, vol.399, p.560, 1999. ,
Lattice effects in magnetoresistive manganese perovskites, Nature, vol.83, issue.6672, p.147, 1998. ,
DOI : 10.1038/32348
Orbital Physics in Transition-Metal Oxides, Science, vol.288, issue.5465, p.462, 2000. ,
DOI : 10.1126/science.288.5465.462
La0.7Sr0.3MnO3 thin films on Bi4Ti3O12/CeO2/yttria-stabilised-zirconia buffered Si(001) substrates: Electrical, magnetic and 1/f noise properties, Materials Science and Engineering: B, vol.144, issue.1-3, p.73, 2007. ,
DOI : 10.1016/j.mseb.2007.07.067
Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition, CMR manganites: physics, thin films and devices', J, p.45305, 2005. ,
DOI : 10.1103/PhysRevB.71.045305
/Si strained???layer heterostructures, Applied Physics Letters, vol.47, issue.3, p.322, 1985. ,
DOI : 10.1063/1.96206
From visible to white light emission by GaN quantum dots on Si(111) substrate, Applied Physics Letters, vol.75, issue.7, p.962, 1999. ,
DOI : 10.1063/1.124567
Influence of the surface reconstruction on the growth of InP on SrTiO 3 (001), J ,
The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO, J. Appl. Phys, vol.2, issue.103, p.84110, 2008. ,
Monolithic integration of InP based heterostructures on silicon using crystalline Gd 2 O 3 buffers ,
Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems, Physical Review B, vol.80, issue.15, p.155308, 2009. ,
DOI : 10.1103/PhysRevB.80.155308
Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper), Microelectronic Engineering, vol.86, issue.7-9, p.1615, 2009. ,
DOI : 10.1016/j.mee.2009.03.108
Self-assembled Ge nanocrystals on high-? cubic Pr2O, J. Appl. Phys, vol.3, issue.102, p.34107, 2007. ,
Cooperative solid-vapor-phase epitaxy ,
215 A. 1 Principle 215 A. 2 Fundamentals of Electron Diffraction, Information obtained from RHEED, p.217 ,
225 C. 2 X-ray reflectivity measurement, 226 C. 4 Reciprocal Space Mapping Measurement (RSM), p.228 ,
Growth temperature dependence of epitaxial Gd2O3 films on Si(111), Growth temperature dependence of epitaxial Gd 2 O 3 films on Si, p.1700, 2009. ,
DOI : 10.1016/j.mee.2009.03.107
Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation, Applied Physics Letters, vol.95, issue.6, p.62902, 2009. ,
DOI : 10.1063/1.3193548
URL : https://hal.archives-ouvertes.fr/hal-00663481
Monolithic integration of Ge on Si using a Gd 2 O 3 /Si (111) template, J. Vac. Sci. Tech A, p.28 ,
Electrical characteristics of crystalline Gd 2 O 3 film on Si (111): impacts of growth temperature and post deposition annealing, 2010. ,
A scenario for the epitaxial growth of SrTiO 3 on silicon, Phys. Rev. Lett, 2010. ,
Influence of the ferroelectric polarization on the electronic structure of BaTiO 3 thin films, Surf. Interface Anal, 2010. ,
In situ monitoring of La0.67Sr0.33MnO3 monolayers grown by pulsed laser deposition, physica status solidi (b), vol.96, issue.176, 2010. ,
DOI : 10.1002/pssb.200983960
Direct epitaxial growth of SrTiO3 on Si (001): interface and crystallization, Thin solid film, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-00753321
Crystal structure of thin epitaxial SrTiO 3 layers grown on silicon, J. Appl. Phys, 2010. ,
Epitaxie d'oxydes fonctionnels sur silicium pour la microélectronique avancée, Journal de la Société des Electroniciens et Electriciens Communications, 2008. ,
Epitaxie directe de SrTiO3 (sans recuit post-dépôt) sur silicium " , Oxydes fonctionnels pour l'intégration en micro-et nano-électronique, pp.16-19, 2008. ,
Intégration de manganites sur silicium " , Oxydes fonctionnels pour l'intégration en micro-et nano-électronique, pp.16-19, 2008. ,
Epitaxie directe de SrTiO 3 sur silicium, Micro et Optoelectronique (JNMO'08), pp.3-6, 2008. ,
The epitaxy of oxides on Silicon by MBE: SrTiO 3 , BaTiO 3 , Gd 2 O 3, pp.27-29, 2008. ,
Monolithic integration of III-V and Ge on Si using compliant epitaxial oxide buffers Epitaxy and characterization of crystalline high k oxides on silicon by MBE, Journées Nationales des Technologies Emergentes (JNTE), pp.1-3, 2008. ,
In situ monitoring of La 0.67 Sr 0.33 MnO 3 monolayers grown by pulsed laser deposition, Optics of Surface and Interfaces I-VIII, pp.7-11, 2009. ,
Epitaxie d'oxydes cristallins « high k » sur silicium, JNRDM, 2009. ,
Integration of functional oxides on silicon: SrTiO 3, 16th International Workshop on Oxide Electronics (WOE 16), 2009. ,
Direct epitaxial growth of SrTiO 3 on Si (001): interface and crystallization, MRS 2010 Spring Meeting, pp.8-10, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-00753321
Cristalline oxide/Si templates for the direct epitaxial growth of III-V and Ge on silicon, MRS 2010 Spring Meeting, pp.8-10 ,