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Lithographie électronique basse énergie : application au multifaisceaux

Abstract : In the coming years lithography will have to face major changes, in order to sustain resolution improvement required for industry. Multi electron beam lithography is a serious alternative to photolithography. It combines high resolution and high throughput. MAPPER Lithography develops such a tool. to take into account multibeam related constraints, a low beam acceleration energy has been preferred : 5keV while current high resolutioni electron beam tools work at 50keV. This study has underlined that such a strategy modifies a key factor of lithography: the exposure dose. And this dose directly plays on several parameters : resolution, patterns roughness, exposure time, etc. In addition, it has been demonstrated that a nois intrinsic to electron beam lithography, related to electron reflection on substrate is significantly modified by acceleration energy. An understanding of energy deposition into resist is proposed. It allow an interpretation of experimental results. Finally, an enlightened discussion on beam energy impact on lithography has led to the determination of experimental parameters well adapted to low energy exposures and especially to MAPPER tool.
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Contributor : Christophe Constancias <>
Submitted on : Wednesday, May 18, 2011 - 9:11:31 AM
Last modification on : Friday, October 23, 2020 - 4:41:11 PM
Long-term archiving on: : Friday, August 19, 2011 - 2:21:19 AM


  • HAL Id : tel-00593909, version 1



David Rio. Lithographie électronique basse énergie : application au multifaisceaux. Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2010. Français. ⟨tel-00593909⟩



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