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Croissance et caractérisation de nanostructures de Ge et Si déposées sur des substrats d'oxyde cristallin à forte permittivité LaA1O3

Abstract : Non-volatile flash memory used in computers, mobile phones and USB-keys can be made up of nanocrystals (SC) inserted in an insulating matrix. It requires development of "Oxide/SC/oxide/Si (001)" type hetero-structures and the control of each interface. Within this framework, we studied the initial growth mechanisms of Si and Ge (SC) on LaA1O3(001) crystal oxide substrates with high permittivity (high-k). Chemical and structural properties have been studied in-situ by X-Ray photoemission (XPS and XPD) and electron diffraction (RHEED and LEED) technics and ex­ situ by atomic force microscopy (AFM) and high resolution tunneling electron microscopy (HRTEM). Clean LaA1O3(001) substrate contains a c(2x2) surface reconstruction which attributed to gaps of oxygen (O) on the surface. Si and Ge have been deposited by molecular bearn epitaxy (MBE), at room temperature followed by series of annealings at high temperatures. Epitaxy requires temperature more than 550°C for the deposition. Volmer Weber growth mode was characterized by the formation of nanometric densely packed islands. These islands are relaxed and have an abrupt interface with the substrate. Islands of Ge have mostly random orientations with nevertheless epitaxy privileged relationship, same as that of the Si.
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Hussein Mortada. Croissance et caractérisation de nanostructures de Ge et Si déposées sur des substrats d'oxyde cristallin à forte permittivité LaA1O3. Autre [cond-mat.other]. Université de Haute Alsace - Mulhouse, 2009. Français. ⟨NNT : 2009MULH3180⟩. ⟨tel-00584121⟩

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