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Contribution à la modélisation des dispositifs MOS haute tension pour les circuits intégrés de puissance ("Smart Power")

Saadia Hniki 1
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : In recent decades, power integrated circuits have experienced very significant growth. Today the regulation and distribution of electrical energy are crucial. The reduction of the dimensions and the need for power highlighted the need for efficient structures. Technology "smart power" has been developed to meet these demands. This technology uses high voltage devices, offering new solutions through its unique characteristics at high voltages and currents. The behavior of these devices is accompanied by the appearance of many phenomena. An accurate modeling of these phenomena is needed to replicate its physical behavior. The objective of this thesis is to improve modeling and to establish a good method of extracting physical parameters related to HV MOS. This thesis has been mainly devoted to modeling the phenomenon of self-heating: development of test structure, modeling of thermal coupling between the sources of transistor, development tool for generating the thermal network. This thesis also looks at the definition of a method for extracting RF noise in the high-voltage transistor including extrinsic gate resistance and capacity Cgs and Cgd. Finally, the last part of the thesis presents a brief assessment of compact HiSIM_HV dedicated to HV MOS and compares it with the macro model used by STMicroelectronics. The results presented in this thesis have been validated by comparison with different measures on SOI technology and solid substrate.
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Contributor : Arlette Evrard <>
Submitted on : Wednesday, March 30, 2011 - 11:15:25 AM
Last modification on : Thursday, June 10, 2021 - 3:07:08 AM
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  • HAL Id : tel-00581114, version 1


Saadia Hniki. Contribution à la modélisation des dispositifs MOS haute tension pour les circuits intégrés de puissance ("Smart Power"). Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2010. Français. ⟨tel-00581114⟩



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