Hillocks formation during the molecular beam epitaxial growth of ZnSe on GaAs substrates, Journal of Crystal Growth, vol.193, issue.4, p.528, 1998. ,
DOI : 10.1016/S0022-0248(98)00515-6
Catalytic Growth of Large-Scale Single-Crystal CdS Nanowires by Physical Evaporation and Their Photoluminescence, Chemistry of Materials, vol.14, issue.4, p.1773, 2002. ,
DOI : 10.1021/cm0115564
Catalytic growth and photoluminescence properties of semiconductor single-crystal ZnS nanowires, Chemical Physics Letters, vol.357, issue.3-4, p.314, 2002. ,
DOI : 10.1016/S0009-2614(02)00530-4
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis, Journal of Applied Physics, vol.102, issue.9, p.94313, 2007. ,
DOI : 10.1063/1.2809417
Failure of the Vapor???Liquid???Solid Mechanism in Au-Assisted MOVPE Growth of InAs Nanowires, Nano Letters, vol.5, issue.4, p.761, 2005. ,
DOI : 10.1021/nl050301c
Semiconductor nanowhiskers, Advanced Materials, vol.32, issue.7-8, p.577, 1993. ,
DOI : 10.1002/adma.19930050715
Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport, Advanced Materials, vol.13, issue.2, p.113, 2001. ,
DOI : 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H
Preparation and photoluminescence properties of crystalline GeO2 nanowires, Chemical Physics Letters, vol.349, issue.3-4, p.210, 2001. ,
DOI : 10.1016/S0009-2614(01)01213-1
Synthesis and electronic transport studies of CdO nanoneedles, Applied Physics Letters, vol.82, issue.12, p.1950, 2003. ,
DOI : 10.1063/1.1562331
GaN nanowire lasers with low lasing thresholds, Applied Physics Letters, vol.87, issue.17, p.173111, 2005. ,
DOI : 10.1063/1.2115087
Self-assembled GaN nano-rods grown directly on (111) Si substrates: Dependence on growth conditions, Journal of Crystal Growth, vol.282, issue.3-4, p.313, 2005. ,
DOI : 10.1016/j.jcrysgro.2005.05.058
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization, Nanotechnology, vol.18, issue.38, p.385306, 2007. ,
DOI : 10.1088/0957-4484/18/38/385306
The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures, Nanotechnology, vol.20, issue.29, p.295706, 2009. ,
DOI : 10.1088/0957-4484/20/29/295706
URL : https://hal.archives-ouvertes.fr/hal-01003087
Nanowire photonics, Materials Today, vol.9, issue.10, p.36, 2006. ,
DOI : 10.1016/S1369-7021(06)71652-2
Structural properties of GaN nanowires and GaN/AlN insertions grown by molecular beam epitaxy, Journal of Physics: Conference Series, vol.209, p.12010, 2010. ,
DOI : 10.1088/1742-6596/209/1/012010
A New Understanding of Au-Assisted Growth of III-V Semiconductor Nanowires, Advanced Functional Materials, vol.1, issue.10, p.1603, 2005. ,
DOI : 10.1002/adfm.200500157
GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy, Applied Physics Letters, vol.89, issue.5, p.53106, 2006. ,
DOI : 10.1063/1.2245348
Growth and characterization of GaP nanowires on Si substrate, Journal of Applied Physics, vol.103, issue.1, p.14301, 2008. ,
DOI : 10.1063/1.2828165
Position-controlled epitaxial III???V nanowires on silicon, Nanotechnology, vol.17, issue.11, p.271, 2006. ,
DOI : 10.1088/0957-4484/17/11/S07
Equilibrium limits of coherency in strained nanowire heterostructures, Journal of Applied Physics, vol.97, issue.11, p.114325, 2005. ,
DOI : 10.1063/1.1903106
Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires, Physical Review B, vol.74, issue.12, p.121302, 2006. ,
DOI : 10.1103/PhysRevB.74.121302
Nanowire-based onedimensional electronics in Materials Today, Octobre, Nature Biotechnology, vol.23, p.1294, 2005. ,
Materials Today, Octobre, Appl. Phys. Lett, vol.54, issue.60, p.6, 1992. ,
Single Quantum Dot Nanowire LEDs, Nano Letters, vol.7, issue.2, p.367, 2007. ,
DOI : 10.1021/nl062483w
URL : http://arxiv.org/abs/cond-mat/0701119
GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si, Nano Letters, vol.10, issue.5, p.1639, 2010. ,
DOI : 10.1021/nl9041774
Vertical nanowire light-emitting diode, Applied Physics Letters, vol.85, issue.24, p.6004, 2004. ,
DOI : 10.1063/1.1836873
Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection, Nano Letters, vol.9, issue.8, p.2926, 2009. ,
DOI : 10.1021/nl901270n
Summer school on semiconductor nanowires, 15-20 Juin, J. Vac. Sci. Tech, vol.8, p.31, 1971. ,
Molecular beam epitaxy, Progress in Solid State Chemistry, vol.10, p.157, 1975. ,
DOI : 10.1016/0079-6786(75)90005-9
URL : https://hal.archives-ouvertes.fr/hal-01492483
General Synthesis of Compound Semiconductor Nanowires, Advanced Materials, vol.12, issue.4, p.298, 2000. ,
DOI : 10.1002/(SICI)1521-4095(200002)12:4<298::AID-ADMA298>3.0.CO;2-Y
Nanospring formation???unexpected catalyst mediated growth, Journal of Physics: Condensed Matter, vol.16, issue.12, p.415, 2004. ,
DOI : 10.1088/0953-8984/16/12/R02
Growth of Crystal Whiskers, The Journal of Chemical Physics, vol.37, issue.2, p.428, 1962. ,
DOI : 10.1063/1.1701338
Growth kinetics and crystal structure of semiconductor nanowires, Physical Review B, vol.78, issue.23, p.235301, 2008. ,
DOI : 10.1103/PhysRevB.78.235301
Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires, Physical Review B, vol.77, issue.3, pp.35414-70, 2008. ,
DOI : 10.1103/PhysRevB.77.035414
Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?, Physical Review Letters, vol.99, issue.14, p.146101, 2007. ,
DOI : 10.1103/PhysRevLett.99.146101
Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires, Physical Review E, vol.70, issue.3, p.31604, 2004. ,
DOI : 10.1103/PhysRevE.70.031604
Diameter-dependent growth rate of InAs nanowires, Physical Review B, vol.76, issue.15, p.153401, 2007. ,
DOI : 10.1103/PhysRevB.76.153401
Surface diffusion effects on growth of nanowires by chemical beam epitaxy, Journal of Applied Physics, vol.101, issue.3, p.34313, 2007. ,
DOI : 10.1063/1.2435800
nanowire, Physical Review B, vol.81, issue.23, p.235436, 2010. ,
DOI : 10.1103/PhysRevB.81.235436
URL : https://hal.archives-ouvertes.fr/hal-01096617
Radial growth dynamics of nanowires, Journal of Crystal Growth, vol.222, issue.3, p.586, 2001. ,
DOI : 10.1016/S0022-0248(00)00971-4
Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy, Journal of Crystal Growth, vol.286, issue.2, p.394, 2006. ,
DOI : 10.1016/j.jcrysgro.2005.10.024
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure, Journal of Crystal Growth, vol.310, issue.2, p.356, 2008. ,
DOI : 10.1016/j.jcrysgro.2007.10.050
Analytical description of the metal-assisted growth of III???V nanowires: Axial and radial growths, Journal of Applied Physics, vol.105, issue.11, p.114304, 2009. ,
DOI : 10.1063/1.3131676
Synthesis of Silicon Nanowires with Wurtzite Crystalline Structure by Using Standard Chemical Vapor Deposition, Advanced Materials, vol.7, issue.10, p.1347, 2007. ,
DOI : 10.1002/adma.200602318
Surface influence on stability and structure of hexagon-shaped III-V semiconductor nanorods, Journal of Applied Physics, vol.102, issue.6, p.63528, 2007. ,
DOI : 10.1063/1.2783899
An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires, Japanese Journal of Applied Physics, vol.45, issue.No. 9, p.275, 2006. ,
DOI : 10.1143/JJAP.45.L275
Growth mechanisms and crystallographic structure of InP nanowires on lattice-mismatched substrates, Journal of Applied Physics, vol.104, issue.4, p.44313, 2008. ,
DOI : 10.1063/1.2968345
First-principles study of GaAs nanowires, Physical Review B, vol.79, issue.16, p.165118, 2009. ,
DOI : 10.1103/PhysRevB.79.165118
Effects of Facet Orientation on Relative Stability between Zinc Blende and Wurtzite Structures in Group III???V Nanowires, Japanese Journal of Applied Physics, vol.49, issue.5, p.55003, 2010. ,
DOI : 10.1143/JJAP.49.055003
Fabrication of individually seeded nanowire arrays by vapour???liquid???solid growth, Nanotechnology, vol.14, issue.12, pp.1255-90, 2003. ,
DOI : 10.1088/0957-4484/14/12/004
GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy, Applied Physics Letters, vol.89, issue.5, p.53106, 2006. ,
DOI : 10.1063/1.2245348
Growth and characterization of GaP nanowires on Si substrate, Journal of Applied Physics, vol.103, issue.1, p.14301, 2008. ,
DOI : 10.1063/1.2828165
Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates, Journal of Crystal Growth, vol.311, issue.5, p.1446, 2009. ,
DOI : 10.1016/j.jcrysgro.2008.12.043
Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core???shell nanowires on Si(111) substrate, Nanotechnology, vol.20, issue.14, p.145302, 2009. ,
DOI : 10.1088/0957-4484/20/14/145302
82 a) 82 b) Sur la vitesse de croissance axiale, . ,
86 a), ., vol.86, issue.87 ,
89 a) Sur la densité des, 91 II.2.2 ,
124 IV Propriétés optiques des NFs, 126 IV.2 Le confinement quantique dans les NFs, p.132 ,
Wetting of Si surfaces by Au???Si liquid alloys, Journal of Applied Physics, vol.93, issue.7, p.3886, 2003. ,
DOI : 10.1063/1.1558996
Couches de Nanotubes et Filaments de Carbone pour l'Emission Froide d'électrons -Intégration Aux écrans Plats à émission de Champ, Thèse de Doctorat, 2006. ,
Position-controlled epitaxial III???V nanowires on silicon, Nanotechnology, vol.17, issue.11, p.271, 2006. ,
DOI : 10.1088/0957-4484/17/11/S07
Metal-catalyzed semiconductor nanowires: a review on the control of growth directions, Semiconductor Science and Technology, vol.25, issue.2, p.24005, 2010. ,
DOI : 10.1088/0268-1242/25/2/024005
Critical diameter for III-V nanowires grown on lattice-mismatched substrates, Applied Physics Letters, vol.90, issue.4, p.43115, 2007. ,
DOI : 10.1063/1.2436655
Growth of Crystal Whiskers, The Journal of Chemical Physics, vol.37, issue.2, p.428, 1962. ,
DOI : 10.1063/1.1701338
Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires, Physical Review E, vol.70, issue.3, p.31604, 2004. ,
DOI : 10.1103/PhysRevE.70.031604
Growth kinetics and crystal structure of semiconductor nanowires, Physical Review B, vol.78, issue.23, p.235301, 2008. ,
DOI : 10.1103/PhysRevB.78.235301
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis, Journal of Applied Physics, vol.102, issue.9, p.94313, 2007. ,
DOI : 10.1063/1.2809417
III???V semiconductor nanowire growth: does arsenic diffuse through the metal nanoparticle catalyst?, Nanotechnology, vol.20, issue.27, p.275604, 2009. ,
DOI : 10.1088/0957-4484/20/27/275604
Analytical description of the metal-assisted growth of III???V nanowires: Axial and radial growths, Journal of Applied Physics, vol.105, issue.11, p.114304, 2009. ,
DOI : 10.1063/1.3131676
nanowire, Physical Review B, vol.81, issue.23, p.235436, 2010. ,
DOI : 10.1103/PhysRevB.81.235436
URL : https://hal.archives-ouvertes.fr/hal-01096617
An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires, Japanese Journal of Applied Physics, vol.45, issue.No. 9, p.275, 2006. ,
DOI : 10.1143/JJAP.45.L275
Modelling the structure of GaAs and InAs nanowires, Journal of Physics: Condensed Matter, vol.20, issue.45, p.454226, 2008. ,
DOI : 10.1088/0953-8984/20/45/454226
Growth mechanisms and crystallographic structure of InP nanowires on lattice-mismatched substrates, Journal of Applied Physics, vol.104, issue.4, p.44313, 2008. ,
DOI : 10.1063/1.2968345
Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?, Physical Review Letters, vol.99, issue.14, p.146101, 2007. ,
DOI : 10.1103/PhysRevLett.99.146101
Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays, Nanotechnology, vol.16, issue.12, p.2903, 2005. ,
DOI : 10.1088/0957-4484/16/12/029
Optical Properties of Rotationally Twinned InP Nanowire Heterostructures, Nano Letters, vol.8, issue.3, p.836, 2008. ,
DOI : 10.1021/nl072921e
-capped InP nanowires, Nanotechnology, vol.21, issue.10, p.105711, 2010. ,
DOI : 10.1088/0957-4484/21/10/105711
Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence, Semiconductor Science and Technology, vol.25, issue.2, p.24010, 2010. ,
DOI : 10.1088/0268-1242/25/2/024010
URL : http://hdl.handle.net/1885/27244
141 II Origine des directions de croissance des nanofils, . ,
152 a) Influence, 152 b) Influence de la PEF de ,
Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon, Nano Letters, vol.9, issue.6, p.2223, 2009. ,
DOI : 10.1021/nl803567v
Position-controlled epitaxial III???V nanowires on silicon, Nanotechnology, vol.17, issue.11, p.271, 2006. ,
DOI : 10.1088/0957-4484/17/11/S07
Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates, Journal of Crystal Growth, vol.311, issue.5, p.1446, 2009. ,
DOI : 10.1016/j.jcrysgro.2008.12.043
Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires, Applied Physics Letters, vol.92, issue.6, p.63112, 2008. ,
DOI : 10.1063/1.2837191
Catalyst-free growth of In(As)P nanowires on silicon, Applied Physics Letters, vol.89, issue.6, p.63119, 2006. ,
DOI : 10.1063/1.2336599
Influence of the surface reconstruction on the growth of InP on SrTiO3(001), Journal of Crystal Growth, vol.311, issue.4, p.1042, 2009. ,
DOI : 10.1016/j.jcrysgro.2008.12.014
nanowire, Physical Review B, vol.81, issue.23, p.235436, 2010. ,
DOI : 10.1103/PhysRevB.81.235436
URL : https://hal.archives-ouvertes.fr/hal-01096617
177 II Insertion de segments d'InAs dans les NFs 179 II ,
187 II.4 L'interface InP ,
III???V semiconductor nanowire growth: does arsenic diffuse through the metal nanoparticle catalyst?, Nanotechnology, vol.20, issue.27, p.275604, 2009. ,
DOI : 10.1088/0957-4484/20/27/275604
Fabrication of InP???InAs???InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy, Applied Physics Letters, vol.88, issue.13, p.133105, 2006. ,
DOI : 10.1063/1.2189203
P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires, Nano Letters, vol.10, issue.5, p.1734, 2010. ,
DOI : 10.1021/nl100157w
Twinning superlattices in indium phosphide nanowires, Nature, vol.60, issue.7220, p.369, 2008. ,
DOI : 10.1038/nature07570
Gallium arsenide p-i-n radial structures for photovoltaic applications, Applied Physics Letters, vol.94, issue.17, p.173108, 2009. ,
DOI : 10.1063/1.3125435
URL : http://infoscience.epfl.ch/record/148563
Rapport interne LTM, 2009. ,
Thèse soutenue à l'Ecole Centrale de Lyon, 2007. ,
Analytical description of the metal-assisted growth of III???V nanowires: Axial and radial growths, Journal of Applied Physics, vol.105, issue.11, p.114304, 2009. ,
DOI : 10.1063/1.3131676