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Croissance de NFs d'InP sur silicium par épitaxie par jets moléculaires en mode VLS

Khalid Naji 1
1 INL - H&N - INL - Hétéroepitaxie et Nanostructures
INL - Institut des Nanotechnologies de Lyon
Abstract : Semiconductor nanowires (NWs) have seen an increasing interest for the last ten years either for the study of their fundamental properties or for their high potential for applications in the field of microelectronics (high speed transistor) and optoelectronics (LED, LASER photovoltaics) For instance, thanks to their specific mode for lattice-mismatch relaxation, IIIVNWs can be grown on foreign substrates such as Si for monolithic integration with keeping a high crystalline quality. This PhD thesis has been oriented towards the growth and characterization of InP naowires on Si by VLS assisted MBE technique. We have studied growth mechanisms as a function of growth parameters, more specifically the effect of V/IIIBEP ratio, and have compared experimental results to theoretical predictions on growth kinetics. We also have studied the growth of InP NWs on SrTiO3 substrates in order to favor the vertical growth on Si (001). For technological applications, we have performed doping, growth of core-shell heterostructures experiments. We also tried selective epitaxy for thesurface localisation of NWs.
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Submitted on : Wednesday, February 23, 2011 - 6:19:14 PM
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Khalid Naji. Croissance de NFs d'InP sur silicium par épitaxie par jets moléculaires en mode VLS. Sciences de l'ingénieur [physics]. Ecole Centrale de Lyon, 2010. Français. ⟨NNT : 2010ECDL0032⟩. ⟨tel-00568900⟩



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