Optical and electronic properties of Si nanoclusters synthesized in inverse micelles, Physical Review B, vol.60, issue.4, p.2704, 1999. ,
DOI : 10.1103/PhysRevB.60.2704
Quantum efficiency and excited-state relaxation dynamics in neodymium-doped phosphate laser glasses, Journal of the Optical Society of America B, vol.8, issue.7, p.1391, 1991. ,
DOI : 10.1364/JOSAB.8.001391
Theoretical aspects of the luminescence of porous silicon, Physical Review B, vol.48, issue.15, p.11024, 1993. ,
DOI : 10.1103/PhysRevB.48.11024
Yasushi Fujimoto and Masahiro Nakatsuka, J. Non-Cryst. Sol, vol.215, issue.182, 1997. ,
-doped glasses, Physical Review B, vol.73, issue.12, p.125107, 2006. ,
DOI : 10.1103/PhysRevB.73.125107
URL : https://hal.archives-ouvertes.fr/hal-00732335
Interfacial reactions and silicate formation in highly dispersed Nd2O3???SiO2 system, Materials Chemistry and Physics, vol.96, issue.2-3, p.353, 2006. ,
DOI : 10.1016/j.matchemphys.2005.07.026
in crystalline Si, Physical Review B, vol.57, issue.8, p.4443, 1998. ,
DOI : 10.1103/PhysRevB.57.4443
Optically active erbium centers in silicon, Physical Review B, vol.54, issue.4, p.2532, 1996. ,
DOI : 10.1103/PhysRevB.54.2532
The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide, Applied Physics Letters, vol.83, issue.14, p.2778, 2003. ,
DOI : 10.1063/1.1615837
nous avons trouvé une valeur de d int égale à 7,25 nm. Cette différence a été attribuée à la nature amorphe ou cristalline des nanograins de Si sensibilisateurs ,
Theoretical aspects of the luminescence of porous silicon, Physical Review B, vol.48, issue.15, p.11024, 1993. ,
DOI : 10.1103/PhysRevB.48.11024
Effects of Si nanocluster size and carrier???Er interaction distance on the efficiency of energy transfer, Journal of Luminescence, vol.126, issue.2, p.581, 2007. ,
DOI : 10.1016/j.jlumin.2006.10.008
Optical and electronic properties of Si nanoclusters synthesized in inverse micelles, Physical Review B, vol.60, issue.4, p.2704, 1999. ,
DOI : 10.1103/PhysRevB.60.2704