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Croissance de films minces de silice enrichies en nano-grains de silicium et dopées aux ions Nd3+ : caractérisation et optimisation des propriétés optiques.

Abstract : Nd3+ doped SRSO single layers and Nd3+ doped Si/SiO2 multilayers were grown by reactive magnetron sputtering. The photoluminescence properties were studied as a function of the samples composition. The PL is quenched by the formation of Nd2O3 clusters when the Nd content is increased. The influence of both composition and temperature were examined and the luminescence decays were fitted using two exponentials. At low temperature, the fast lifetime component (~40ms) was attributed to Nd2O3 clusters and the slow component (~240ms) was due to Nd radiative transition. While the Nd increase showed a detrimental effect on both components of the PL decays, the thermal activation of Nd3+ non radiative de-excitation processes induced a small decrease on the emission lifetime. The multilayer approach was used to determine the critical parameters such as the optimum Si nanoclusters (Si-nc) size and the characteristic interaction distance Si-nc-Nd.
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Submitted on : Tuesday, February 1, 2011 - 7:59:22 PM
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  • HAL Id : tel-00559984, version 1

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David Bréard. Croissance de films minces de silice enrichies en nano-grains de silicium et dopées aux ions Nd3+ : caractérisation et optimisation des propriétés optiques.. Matériaux. Université de Caen, 2007. Français. ⟨tel-00559984⟩

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