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Intégration de matériaux à forte permittivité électrique (High-k) dans les mémoires non-volatiles pour les générations sub-45nm

Abstract : Flash memory is today a major element for the development of the portable electronics which require more and more memory capability at low cost (netbook, cell phones, PDA, USB sticks...). In order to maintain it for the years to come, it is necessary to continue improving this technology. Also, the integration of High-k materials and the use of trap charge memories are strongly envisaged. This PhD focuses on the integration and the electrical study (fixed charge, trapping, leakage currents...) of the most promising High-k materials (HfO2, HfAlO, Al2O3, HfSiON) for non-volatile memory applications. These materials are then integrated in nanocristal memories and nitride charge trap memories. The analysis of the memory performances was made through a modelling study of the involved physical mechanisms. In particular, a complete SONOS-like model is proposed to explain the experimental results.
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https://tel.archives-ouvertes.fr/tel-00559617
Contributor : Marc Bocquet <>
Submitted on : Wednesday, January 26, 2011 - 8:34:45 AM
Last modification on : Friday, November 6, 2020 - 4:06:59 AM
Long-term archiving on: : Tuesday, November 6, 2012 - 12:25:16 PM

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  • HAL Id : tel-00559617, version 1

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CEA | CNRS | DRT | LETI | CEA-GRE | UGA

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Marc Bocquet. Intégration de matériaux à forte permittivité électrique (High-k) dans les mémoires non-volatiles pour les générations sub-45nm. Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2009. Français. ⟨tel-00559617⟩

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