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Réalisation de jonctions ultra-minces par recuit laser : application aux détecteurs UV

Abstract : Since the 1970's, the components size has steadily declined. The realization of highly-doped ultra shallow junctions became a key point in the reduction of microelectronic devices. The manufacturing processes must evolve to meet the stringent specifications of the next technology nodes, in particular in terms of dimension and electrical properties of the doped area. In this thesis we have studied the process of laser annealing of dopants implanted by plasma immersion. The ArF excimer laser we used is absorbed in less than 10 nm of silicon, which allows a local heating. Moreover, the short pulse duration provides a low thermal budget which reduces the dopant diffusion. By combining this technique with plasma immersion ion implantation, which is interesting because of the very low acceleration voltage (few tens of eV), we can produce highly activated junctions without diffusion. After a presentation of the different doping techniques that may be used, we describe the experimental treatment and the characterization tools that we used. We have used numerical simulations to understand the role of the laser parameters on the temperature profile of the silicon surface. After choosing the most suitable laser between ArF, KrF and XeCl (respectively : 193 nm - 15 ns, 248 nm - 35 ns, 308 nm - 50 ns), we studied the influence of the number of shots and beam shaping to optimize the process. Finally, inhomogeneities caused by the beam edges have been studied and identified in order to improve the laser scan process.
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Contributor : Yannick Larmande <>
Submitted on : Wednesday, January 19, 2011 - 10:03:31 AM
Last modification on : Tuesday, October 20, 2020 - 3:10:25 AM
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  • HAL Id : tel-00557507, version 1



Yannick Larmande. Réalisation de jonctions ultra-minces par recuit laser : application aux détecteurs UV. Physique Atomique [physics.atom-ph]. Université de la Méditerranée - Aix-Marseille II, 2010. Français. ⟨tel-00557507⟩



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