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Contrôle microstructural du cuivre aux dimensions nanométriques : Application à la maîtrise de la résistivité des interconnexions en microélectronique

Abstract : In integrated circuits, interconnects have a role more and more important since the number components is increasing. When dimensions are of the order of tens of nanometres, metal resistivity increases and interconnects reliability decreases. These two phenomenons are partly due to metal microstructure in nano-scale lines. This study deals with the copper microstructure in interconnects. For that, microstructure evolution was studied in thin films, narrow lines and in the Damascene architecture. Relevant microstructure evolution parameters were identified, quantified and understand in these geometries, such as dimensions, pinning forces and grain boundary mobility evolution. Solutions are proposed to optimize microstructure.
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https://tel.archives-ouvertes.fr/tel-00547628
Contributor : Vincent Carreau <>
Submitted on : Thursday, December 16, 2010 - 10:17:55 PM
Last modification on : Friday, October 23, 2020 - 4:35:22 PM
Long-term archiving on: : Thursday, March 17, 2011 - 3:29:09 AM

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  • HAL Id : tel-00547628, version 1

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Vincent Carreau. Contrôle microstructural du cuivre aux dimensions nanométriques : Application à la maîtrise de la résistivité des interconnexions en microélectronique. Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2008. Français. ⟨tel-00547628⟩

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