L. Mémoires and M. , Mémoire magnétique à accès aléatoire), p.20

:. Le-transport-du-spin-dans-les-semi-conducteurs, 26 2.1. Les mécanismes de relaxation des spins, p.26

:. La-collection-du-spin, 28 3.1. La détection optique de la polarisation du spin : 28 3.2. La détection électrique de la polarisation du spin, p.29

:. La-spintronique-dans-le-silicium, 29 4.1. Motivations pour l'utilisation du silicium : 29 4.2. Exemples d'études de l'injection de spin dans le silicium : Transistor à diffusion de spin, p.33

M. Structure, 55 2.1. Les différentes charges dans l'oxyde : 55 2.1.1. La charge fixe, p.56

C. Et-classification-des-défauts and :. , 57 II. Propriétés des états d'interface, p.58

:. Détermination-des-États-d-'interface, 65 6.1.1. L'effet de « Stretching » sur la C(Vg) due aux états d'interface: 65 6.1.2. La contribution capacitive des états d'interface, ., p.69

:. Méthode-de-la-conductance, 70 6.2.1. Introduction, p.74

R. Effet-de, 86 1. 3. Effet de la température de mesure sur la densité d'états d'interface, p.90

L. Etude-de, 95 3.1. Détermination de la densité des états d'interface et comparaison avec la méthode C(V) hf-lf, ., p.96

«. Le-mécanisme-de-transport-par-saut-ou and ». Hopping, 107 2.3. Le mécanisme tunnel assisté par les pièges

:. Détermination-du-type-de-mécanisme-du-transport, 110 2.1. Cas de la structure MIS à grille d'aluminium, p.111

:. Equation-de-schrödinger, 116 3.1. Résolution de l'équation de Schrödinger dans un potentiel indépendant du temps : 116 3.2. Résolution de l'équation de Schrödinger pour des systèmes à énergie potentielle constante, Conclusion, p.118

:. Méthode-de-la-transparence, 126 7.1.1. Transparence tunnel, p.128

:. Expression-du-courant-tunnel, 133 7.1.3.1. Courant 2D, p.134

D. Modèle-tunnel, 137 8.2.1. Injection depuis le substrat, p.140

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