Mémoire magnétique à accès aléatoire), p.20 ,
26 2.1. Les mécanismes de relaxation des spins, p.26 ,
28 3.1. La détection optique de la polarisation du spin : 28 3.2. La détection électrique de la polarisation du spin, p.29 ,
29 4.1. Motivations pour l'utilisation du silicium : 29 4.2. Exemples d'études de l'injection de spin dans le silicium : Transistor à diffusion de spin, p.33 ,
55 2.1. Les différentes charges dans l'oxyde : 55 2.1.1. La charge fixe, p.56 ,
57 II. Propriétés des états d'interface, p.58 ,
65 6.1.1. L'effet de « Stretching » sur la C(Vg) due aux états d'interface: 65 6.1.2. La contribution capacitive des états d'interface, ., p.69 ,
70 6.2.1. Introduction, p.74 ,
86 1. 3. Effet de la température de mesure sur la densité d'états d'interface, p.90 ,
95 3.1. Détermination de la densité des états d'interface et comparaison avec la méthode C(V) hf-lf, ., p.96 ,
107 2.3. Le mécanisme tunnel assisté par les pièges ,
110 2.1. Cas de la structure MIS à grille d'aluminium, p.111 ,
116 3.1. Résolution de l'équation de Schrödinger dans un potentiel indépendant du temps : 116 3.2. Résolution de l'équation de Schrödinger pour des systèmes à énergie potentielle constante, Conclusion, p.118 ,
126 7.1.1. Transparence tunnel, p.128 ,
133 7.1.3.1. Courant 2D, p.134 ,
137 8.2.1. Injection depuis le substrat, p.140 ,
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