Etude des mécanismes de transport dans les diodes tunnels de type MIS associant ferromagnétiques et silicium

Abstract : The study of fundamental mechanisms which control the injection of spins from a ferromagnetic metal to silicon is the subject of this work of thesis. This study is based on the modelling and analysis of electrical characteristics of a test structure composed of two ferromagnetic electrodes used respectively to inject and collect spins. The study of electrical properties of a FMIS diode (ferromagnet/isolant/silicon) is realised. The selective inversion of the orientation of the magnetization of one of the electrodes and the variation of the magneto resistance is a signature of spin injection into silicon. This concept of magnetic memory integrated on silicon can give an alternative solution to other memories like the flash one which have many problems.
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Submitted on : Wednesday, December 8, 2010 - 12:41:21 AM
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Rabia Benabderrahmane. Etude des mécanismes de transport dans les diodes tunnels de type MIS associant ferromagnétiques et silicium. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2009. Français. ⟨tel-00544391⟩

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