Skip to Main content Skip to Navigation
Theses

Développement, mécanismes de programmation et fiabilité de mémoires non volatiles à commutation de résistance MRAM et OxRRAM

Abstract : Microelectronics has shown a rapid development due to the improvement of performances and the cost reduction. The memory market is a key domain in this sector. The major stake is to accede to universal memory which will replace all the others, by associating the DRAM density and "unlimited" endurance, the SRAM rapidity and the Flash non volatility. We have focused on the MRAM and OxRRAM technologies, having the advantage of being, like the Flash technology, non volatile and compatible with MOS technology. They should also be, according to the architecture adopted, as rapid as a SRAM, as dense as a DRAM and have an almost unlimited endurance. These technologies are based on concepts in which the discrimination between the two states of the memory point is operated by a resistance change. The first part of this thesis has been dedicated to the MRAM technology and particularly to the reliability of the tunnel oxide integrated in the magnetic junction, basic element of MRAM memory cells. The second part has been centered on the development and the understanding of physical programming mechanisms of OxRRAM memory integrating a NiO binary oxide in the memorization element. A particular stress has been put on the development of a simple technological solution in its manufacturing process and permitting to obtain stacks with electrical performances conforming to specifications. Thus, it is possible to consider the nickel oxide integration in very small-sized dimension structures and to aim at a substantial reduction of the memory cell size.
Document type :
Theses
Complete list of metadatas

Cited literature [164 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-00536904
Contributor : Toulon Scd <>
Submitted on : Thursday, November 18, 2010 - 5:28:44 PM
Last modification on : Thursday, March 15, 2018 - 4:56:06 PM
Long-term archiving on: : Friday, December 2, 2016 - 10:09:15 PM

Identifiers

  • HAL Id : tel-00536904, version 1

Collections

Citation

Lorène Courtade. Développement, mécanismes de programmation et fiabilité de mémoires non volatiles à commutation de résistance MRAM et OxRRAM. Physique [physics]. Université du Sud Toulon Var, 2009. Français. ⟨tel-00536904⟩

Share

Metrics

Record views

557

Files downloads

2415