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ELABORATION ET CARACTERISATION DE COUCHES DE NITRURE D'ALUMINIUM AlN PAR CVD HAUTE TEMPERATURE EN CHIMIE CHLOREE

Abstract : In optoelectronics, group III nitride semiconductors technologies will allow to reduce the electrical energy required for lighting. Aluminum nitride, AlN, is a very attractive substrate for UV LEDs manufacturing. The goal of this PhD thesis is to study the development of a high-rate growth process to produce AlN single crystals at high temperature from a chloride gas-phase (HTCVD). AlN layers are deposited using NH3 and AlCl3 which is synthesized by the in situ reaction between aluminum and chlorine. A preliminary thermodynamic study is carried out in order to investigate materials incompatibilities at high temperature. Thermodynamic modeling of the Al-N-Cl-H system can also exhibit the global chemical mechanisms and the optimized parameters useful for the development of AlN single crystal growth by CVD. An experimental parametric study is performed in order to understand the influence of operating conditions on AlN growth rate, surface morphology and crystalline state. Optimized conditions to achieve epitaxial growth are also investigated. Both, polycrystalline and epitaxial layers are structurally studied and their properties are investigated. A growth mechanisms and properties study is carried out for polycrystals produced at high growth rate. AlN epitaxial layers morphology, structure, defects and properties are studied.
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Submitted on : Monday, October 4, 2010 - 5:06:36 PM
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A. Claudel. ELABORATION ET CARACTERISATION DE COUCHES DE NITRURE D'ALUMINIUM AlN PAR CVD HAUTE TEMPERATURE EN CHIMIE CHLOREE. Génie des procédés. Institut National Polytechnique de Grenoble - INPG, 2009. Français. ⟨tel-00523292⟩

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