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Etude et compréhension des mécanismes de croissance catalysés des nanofils de silicium obtenus par Dépôt Chimique en phase Vapeur

Abstract : Silicon nanowires hold many technological promises but require a strict dimension and shape control. Growth of silicon nanowires can be performed by Chemical Vapour Deposition using gold catalysts and silicon precursors, with and without chlorine. We identify here the roles of chlorine on the growth stability and the wire morphology. The silicon surface is shown to chlorinate in the presence of chlorine, which reduces the gold migration on the wire surface without changing the (axial) growth kinetics. Growth conditions that use chlorine are then suitable for the stable growth of small diameter silicon nanowire down to 20 nm whereas chlorine-free growth can be unstable. The effect of chlorine is also visible on the wire sidewalls, where the facets evolution depends on the radial growth speed. Passivation of the surfaces is then a key point to stabilize the growth of wires and to control their morphology.
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https://tel.archives-ouvertes.fr/tel-00521128
Contributor : Fabrice Oehler <>
Submitted on : Saturday, September 25, 2010 - 4:19:07 PM
Last modification on : Monday, November 16, 2020 - 10:46:02 AM
Long-term archiving on: : Sunday, December 26, 2010 - 2:35:03 AM

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  • HAL Id : tel-00521128, version 1

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Fabrice Oehler. Etude et compréhension des mécanismes de croissance catalysés des nanofils de silicium obtenus par Dépôt Chimique en phase Vapeur. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2010. Français. ⟨tel-00521128⟩

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