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Etude des dépôts par plasma ALD de diélectriques à forte permittivité diélectrique (dits « High-K ») pour les applications capacités MIM

Abstract : The continuous decreasing size of integrated circuits in the field of microelectronics is now applied to passive components such as MIM (Metal/Insulator/Metal) capacitors. To increase the capacitance density of MIM capacitors, new materials with high permittivity are required to replace silica (SiO2, ε = 3.9). ZrO2 permittivity is around 47 for the tetragonal phase. ZrO2 is deposited by PEALD. We studied the ZrO2 deposition method with TEMAZ and ZyALD precursors. Thermodynamic properties of TEMAZ have been analyzed by Knudsen cell mass spectrometry. PEALD process parameters and post-treatments influence on the tetragonal zirconia synthesis have been investigated. Various characterisation methods (XRD, Raman spectroscopy, TEM, SIMS, XPS, electrical characterisation) were employed to establish an optimum between ZrO2 films properties and deposition process performance.
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Submitted on : Thursday, September 23, 2010 - 2:34:08 PM
Last modification on : Thursday, November 19, 2020 - 3:54:15 PM
Long-term archiving on: : Friday, December 2, 2016 - 1:07:43 PM

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  • HAL Id : tel-00520511, version 1

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D. Monnier. Etude des dépôts par plasma ALD de diélectriques à forte permittivité diélectrique (dits « High-K ») pour les applications capacités MIM. Génie des procédés. Institut National Polytechnique de Grenoble - INPG, 2010. Français. ⟨tel-00520511⟩

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