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G. A. Slack, CRC Handbook of thermoelectrics, Boca Raton, vol.407, 1995.

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D. Hohnke and E. Parthé, structure type for rare earth germanides, antimonides and bismuthides, Acta Crystallographica, vol.21, issue.3, p.435, 1966.
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M. O-'keeffe and S. Anderson, Rod packings and crystal chemistry, Acta Crystallographica Section A, vol.33, issue.6, p.914, 1977.
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A. May, J. Snyder, and J. Fleurial, Space Technology and Applications International Forum, 2008.

S. M. Taher and J. B. Gruber, Thermoelectric efficiency of rare earth sesquisulfides, Materials Research Bulletin, vol.16, issue.11, p.1407, 1981.
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T. Takeshita, K. A. Gschneider-jr, B. J. Et, and . Beaudry, <1.50) alloys by the pressure???assisted reaction sintering method and their thermoelectric properties, Journal of Applied Physics, vol.57, issue.10, p.4633, 1985.
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URL : https://hal.archives-ouvertes.fr/hal-00332975

C. Wood, Materials for thermoelectric energy conversion, Reports on Progress in Physics, vol.51, issue.4, p.459, 1988.
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M. Cutler and J. F. Leavy, Electronic Transport in High-Resistivity Cerium Sulfide, Physical Review, vol.133, issue.4A, p.1153, 1964.
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M. Cutler, R. L. Fitzpatrick, and J. F. Leavy, The conduction band of cerium sulfide Ce3???xS4, Journal of Physics and Chemistry of Solids, vol.24, issue.2, p.319, 1963.
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E. Bucher, A. Cooper, D. Jaccard, and J. Sierro, Valence Instabilities and Related Narrow Band Gap Phenomena, p.529, 1977.

C. E. Price and I. H. Warren, Some X-Ray and Thermoelectric Studies on Cubic Th[sub 3]X[sub 4] Compounds, Journal of The Electrochemical Society, vol.112, issue.5, p.510, 1965.
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P. J. Markowski, Z. Henkie, and A. Wojakowski, Electronic properties of Th3As4???U3As4 solid solutions, Solid State Communications, vol.32, issue.11, p.1119, 1979.
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V. Shubha and T. G. Ramesh, Critical point for the valence transition in Sm4Bi3, Solid State Communications, vol.63, issue.9, p.779, 1987.
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F. Hulliger and O. Vogt, New ferromagnetic europium compounds, Solid State Communications, vol.8, issue.10, p.771, 1970.
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R. Skolozdra, M. Baran, A. Horyn, A. Szewczyk, Y. Gorelenko et al., Compounds (R = La, Ce, Pr, Nd, and Sm), Acta Physica Polonica A, vol.102, issue.3, p.429, 2002.
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I. Chapitre, Les pnictogénures terres rares de type anti-Th 3 P 4 et leurs propriétés physiques, Phys. Rev. B, vol.60, issue.5282, 1999.

M. Kasaya, K. Katoh, and K. Takegahara, Semiconducting properties of the isomorphous compounds, Ce3Au3Sb4 and Ce3Pt3Sb4, Solid State Communications, vol.78, issue.9, p.797, 1991.
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R. J. Gambino, Rare-earth-Sb and -Bi compounds with the Gd4Bi3 (anti-Th3P4) structure, Journal of the Less Common Metals, vol.12, issue.5, p.344, 1967.
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K. Neumaier, K. Andres, and H. R. Ott, On the valence transformation and the ground state of mixed valent Sm4Bi3, Physica B+C, vol.108, issue.1-3, p.1343, 1981.
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A. Jayaraman, R. G. Maines, and E. Bucher, Pressure-induced valence instability in Sm4Bi3, Solid State Communications, vol.27, issue.7, p.709, 1978.
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URL : https://hal.archives-ouvertes.fr/jpa-00218907

V. N. Antonov, B. N. Harmon, and A. N. Yaresko, Electronic structure of mixed-valence and charge-ordered Sm and Eu pnictides and chalcogenides, Physical Review B, vol.72, issue.8, pp.85119-85120, 2005.
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J. Q. Li, X. W. Feng, J. L. Liang, Y. X. Jian, and F. S. Liu, The isothermal section of the Eu???Co???Sb ternary system at room temperature, Journal of Alloys and Compounds, vol.439, issue.1-2, pp.143-145, 2007.
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M. Kohgi, K. Iwasa, J. Mignot, A. Ochiai, and T. Suzuki, The role of charge ordering, Physical Review B, vol.56, issue.18, p.11388, 1997.
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I. Chapitre, Les pnictogénures terres rares de type anti-Th 3 P 4 et leurs propriétés physiques

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F. Hulliger, Eu4As3, a new trigonal anti-Th3P4-type compound, Materials Research Bulletin, vol.14, issue.1, p.33, 1979.
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T. F. Maksudova, P. G. Rustamov, and O. M. , The ytterbium-bismuth system, Journal of the Less Common Metals, vol.109, issue.2, p.19, 1985.
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J. A. Mccormack and J. Fleurial, Modern Perspectives on Thermoelectrics and Related Materials, MRS Symp. Proc. 234, 1991.

E. Bucher, A. Cooper, D. Jaccard, and J. Sierro, Valence Instabilities and related narrow bandgap phenomena, p.529, 1977.

D. Hohnke and E. Parthé, structure type for rare earth germanides, antimonides and bismuthides, Acta Crystallographica, vol.21, issue.3, p.435, 1966.
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M. Telkes, The Efficiency of Thermoelectric Generators. I., Journal of Applied Physics, vol.18, issue.12, p.1116, 1947.
DOI : 10.1063/1.1697593

B. Lenoir, J. Michenaud, and A. Dauscher, Conversion d'énergie par effets thermoélectriques : théorie, matériaux et applications, édité par S. Hébert, B. Lenoir et C. Simon, vol.3, 2009.

G. A. Slack, CRC Handbook of thermoelectrics, Boca Raton, vol.407, 1995.

T. C. Harman, M. P. Walsh, B. E. Laforge, and G. Turner, Nanostructured thermoelectric materials, Journal of Electronic Materials, vol.16, issue.5, pp.19-22, 2005.
DOI : 10.1007/s11664-005-0083-8

D. Hohnke and E. Parthé, structure type for rare earth germanides, antimonides and bismuthides, Acta Crystallographica, vol.21, issue.3, p.435, 1966.
DOI : 10.1107/S0365110X66003098

M. O-'keeffe and S. Anderson, Rod packings and crystal chemistry, Acta Crystallographica Section A, vol.33, issue.6, p.914, 1977.
DOI : 10.1107/S0567739477002228

A. May, J. Snyder, and J. Fleurial, Space Technology and Applications International Forum, 2008.

S. M. Taher and J. B. Gruber, Thermoelectric efficiency of rare earth sesquisulfides, Materials Research Bulletin, vol.16, issue.11, p.1407, 1981.
DOI : 10.1016/0025-5408(81)90060-X

T. Takeshita, K. A. Gschneider-jr, B. J. Et, and . Beaudry, <1.50) alloys by the pressure???assisted reaction sintering method and their thermoelectric properties, Journal of Applied Physics, vol.57, issue.10, p.4633, 1985.
DOI : 10.1063/1.335373

URL : https://hal.archives-ouvertes.fr/hal-00332975

C. Wood, Materials for thermoelectric energy conversion, Reports on Progress in Physics, vol.51, issue.4, p.459, 1988.
DOI : 10.1088/0034-4885/51/4/001

M. Cutler, J. F. Leavy, and R. L. Fitzpatrick, Electronic Transport in Semimetallic Cerium Sulfide, Physical Review, vol.133, issue.4A, p.1143, 1964.
DOI : 10.1103/PhysRev.133.A1143

M. Cutler and J. F. Leavy, Electronic Transport in High-Resistivity Cerium Sulfide, Physical Review, vol.133, issue.4A, p.1153, 1964.
DOI : 10.1103/PhysRev.133.A1153

M. Cutler, R. L. Fitzpatrick, and J. F. Leavy, The conduction band of cerium sulfide Ce3???xS4, Journal of Physics and Chemistry of Solids, vol.24, issue.2, p.319, 1963.
DOI : 10.1016/0022-3697(63)90136-7

F. Holtzberg and S. Methfessel, ???Type Structure, Journal of Applied Physics, vol.37, issue.3, p.1433, 1966.
DOI : 10.1063/1.1708500

E. Bucher, A. Cooper, D. Jaccard, and J. Sierro, Valence Instabilities and Related Narrow Band Gap Phenomena, p.529, 1977.

C. E. Price and I. H. Warren, Some X-Ray and Thermoelectric Studies on Cubic Th[sub 3]X[sub 4] Compounds, Journal of The Electrochemical Society, vol.112, issue.5, p.510, 1965.
DOI : 10.1149/1.2423585

P. J. Markowski, Z. Henkie, and A. Wojakowski, Electronic properties of Th3As4???U3As4 solid solutions, Solid State Communications, vol.32, issue.11, p.1119, 1979.
DOI : 10.1016/0038-1098(79)90844-5

V. Shubha and T. G. Ramesh, Critical point for the valence transition in Sm4Bi3, Solid State Communications, vol.63, issue.9, p.779, 1987.
DOI : 10.1016/0038-1098(87)90884-2

F. Hulliger and O. Vogt, New ferromagnetic europium compounds, Solid State Communications, vol.8, issue.10, p.771, 1970.
DOI : 10.1016/0038-1098(70)90427-8

R. Skolozdra, M. Baran, A. Horyn, A. Szewczyk, Y. Gorelenko et al., Compounds (R = La, Ce, Pr, Nd, and Sm), Acta Physica Polonica A, vol.102, issue.3, p.429, 2002.
DOI : 10.12693/APhysPolA.102.429

M. Kasaya, K. Katoh, and K. Takegahara, Semiconducting properties of the isomorphous compounds, Ce3Au3Sb4 and Ce3Pt3Sb4, Solid State Communications, vol.78, issue.9, p.797, 1991.
DOI : 10.1016/0038-1098(91)90623-4

R. J. Gambino, Rare-earth-Sb and -Bi compounds with the Gd4Bi3 (anti-Th3P4) structure, Journal of the Less Common Metals, vol.12, issue.5, p.344, 1967.
DOI : 10.1016/0022-5088(67)90002-1

K. Neumaier, K. Andres, and H. R. Ott, On the valence transformation and the ground state of mixed valent Sm4Bi3, Physica B+C, vol.108, issue.1-3, p.1343, 1981.
DOI : 10.1016/0378-4363(81)90970-0

A. Jayaraman, R. G. Maines, and E. Bucher, Pressure-induced valence instability in Sm4Bi3, Solid State Communications, vol.27, issue.7, p.709, 1978.
DOI : 10.1016/0038-1098(78)90007-8

URL : https://hal.archives-ouvertes.fr/jpa-00218907

V. N. Antonov, B. N. Harmon, and A. N. Yaresko, Electronic structure of mixed-valence and charge-ordered Sm and Eu pnictides and chalcogenides, Physical Review B, vol.72, issue.8, pp.85119-85120, 2005.
DOI : 10.1103/PhysRevB.72.085119

J. Q. Li, X. W. Feng, J. L. Liang, Y. X. Jian, and F. S. Liu, The isothermal section of the Eu???Co???Sb ternary system at room temperature, Journal of Alloys and Compounds, vol.439, issue.1-2, pp.143-145, 2007.
DOI : 10.1016/j.jallcom.2006.08.259

M. Kohgi, K. Iwasa, J. Mignot, A. Ochiai, and T. Suzuki, The role of charge ordering, Physical Review B, vol.56, issue.18, p.11388, 1997.
DOI : 10.1103/PhysRevB.56.R11388

S. Ono, J. G. Despault, L. D. Calvert, and J. B. Taylor, Rare-earth arsenides, Journal of the Less Common Metals, vol.22, issue.1, p.51, 1970.
DOI : 10.1016/0022-5088(70)90175-X

F. Hulliger, Eu4As3, a new trigonal anti-Th3P4-type compound, Materials Research Bulletin, vol.14, issue.1, p.33, 1979.
DOI : 10.1016/0025-5408(79)90228-9

T. F. Maksudova, P. G. Rustamov, and O. M. , The ytterbium-bismuth system, Journal of the Less Common Metals, vol.109, issue.2, p.19, 1985.
DOI : 10.1016/0022-5088(85)90074-8

H. M. Rietveld, A profile refinement method for nuclear and magnetic structures, Journal of Applied Crystallography, vol.2, issue.2
DOI : 10.1107/S0021889869006558

J. A. Mccormack and J. Fleurial, Modern Perspectives on Thermoelectrics and Related Materials, MRS Symp. Proc. 234, 1991.

E. Bucher, A. Cooper, D. Jaccard, and J. Sierro, Valence Instabilities and related narrow bandgap phenomena, p.529, 1977.

D. Hohnke and E. Parthé, structure type for rare earth germanides, antimonides and bismuthides, Acta Crystallographica, vol.21, issue.3, p.435, 1966.
DOI : 10.1107/S0365110X66003098

M. Escorne, A. Mauger, D. Ravot, and J. C. Achard, Transport properties of CeSb, Journal of Physics C: Solid State Physics, vol.14, issue.13, p.1821, 1981.
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