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Etudes morphologiques et cinétiques de l'élaboration de nano-objets cristallins (Si & SiGe) par RTCVD

Abstract : Nowadays, Moore's law is impacted by the physical limitations of advanced technologies thus resulting in further complexity. As a result, new processes need to be developed, as illustrated in the case of epitaxy. Because CVD processes have become highly performant, they offer technological solutions which alloy the devices scaling thanks to their integration into these technologies. This thesis attempts therefore to respond to this request for new processes via the elaboration of Si and SiGe nano-objects realized by RT-CVD. When examining non-selective deposits, we are able to observe that film characteristics depend on crystalline orientation and to demonstrate the behavioral differences between Si and SiGe at high temperature. Further, our studies on selective deposits show that it is possible to break free from the “loading effect”, a restrictive phenomenon within the industry. In these studies, we have been able to establish a forecasting model for faceting, thus allowing the optimum choice of process. We then discuss dry etching of silicium by HCl and its association with our epitaxy deposits. We have thus registered the absence of facetting in all CVD processes carried out on <100> patterns. Finally, we have characterized the annealing effect on Si and SiGe objects of different shapes and size. Annealing results in a smoothing of the structure profile leading to shapes closer to equilibrium. This morphological evolution is obtained by surface diffusion and is higher and faster the smaller the size of the objects. All these morphological and kinetic studies have thus allowed us to efficiently integrate an epitaxy step into the manufacture of an advanced device represented by the FinFET transistor.
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Contributor : Clément Pribat <>
Submitted on : Thursday, October 21, 2010 - 7:56:25 PM
Last modification on : Thursday, November 19, 2020 - 3:52:07 PM
Long-term archiving on: : Saturday, January 22, 2011 - 2:57:55 AM


  • HAL Id : tel-00517869, version 2



Clément Pribat. Etudes morphologiques et cinétiques de l'élaboration de nano-objets cristallins (Si & SiGe) par RTCVD. Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2010. Français. ⟨tel-00517869v2⟩



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