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Modélisation physique et simulation de défauts étendus et diffusion des dopants dans le Si, Soi et SiGe pour les MOS avancés

Abstract : Ion implantation of dopants represents the preferred method to fabricate ultra-shallow (<15 nm) and heavily doped source/drain (S/D) extension junctions for advanced MOSFETs transistors. However, during annealing, this method implies the formation of extended defects of interstitial-type. The corresponding dopants-defects interactions lead to different problems such as dopants transient enhanced diffusion (TED) as well as the degradation of the junctions' electrical properties. The objective of this thesis was to model comprehensively the various physical phenomena occurring during S/D junction fabrication in order to predict the distribution of dopants in the doped regions. To do this, we first simulated the competitive growth of the various defect types upon annealing and coupled it to dopant diffusion, particularly in the case of technological interest, i.e. following high dose dopant implants in preamorphised substrates, when dopants are trapped by the extended defects and are partially deactivated. We then extended the developed models from silicon to new materials such as SOI (Silicon-On-Insulator) or SiGe (silicon/germanium) alloys. Finally, models developed and calibrated for ultra-shallow junctions manufacturing were validated by simulating electrical characteristics of the advanced MOSFETs developed at STMicroelectronics-Crolles (C65nm SOI and SiGe 45nm), with special attention to small geometry effects such as the SCE (Short Channel Effects) and DIBL (Drain-Induced Barrier Lowering).
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https://tel.archives-ouvertes.fr/tel-00509153
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Submitted on : Tuesday, August 10, 2010 - 2:09:02 PM
Last modification on : Friday, January 10, 2020 - 9:08:08 PM
Long-term archiving on: : Friday, November 12, 2010 - 11:43:34 AM

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  • HAL Id : tel-00509153, version 1

Citation

Mehdi Bazizi El. Modélisation physique et simulation de défauts étendus et diffusion des dopants dans le Si, Soi et SiGe pour les MOS avancés. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2010. Français. ⟨tel-00509153⟩

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