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Injection de spins dans les semi-conducteurs

Louis Grenet 1
1 NM - Nanostructures et Magnétisme
SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures : DSM/INAC/SP2M
Abstract : Spin injection into semiconductors is a key point of spintronics, which aims at using the spin of electron as a degree of freedom. This work deals with spin injection from a ferromagnetic electrode into semiconductor through a tunnel barrier without applying a magnetic field. Spin polarization of the current is optically detected. That method requires an out-of-plane magnetization of the electrodes. This work is thus structured in two parts. The first section deals with fabrication of oxide/ferromagnetic metal heterostructures for spin injection into GaAs and Si. Growth of MgO/FePt by molecular beam epitaxy on GaAs and of Al2O3/CoPt by sputtering on Si are described. The study of the magnetic, structural and transport properties of such layers demonstrate the possibility of obtaining thin layers for spin injection in different semiconducting materials. The second part of this work focuses on spin polarized transport in silicon. Spin injection into this material without applying a external magnetic lm is thus demonstrated for the rst time thanks to electroluminescence measurements. The analysis of the light emitted by a SiGe quantum well embedded in a Si diode shows an optical polarization of about 3% which is caused by the spin polarization of the injected current.
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Submitted on : Saturday, August 7, 2010 - 7:05:45 PM
Last modification on : Thursday, March 7, 2019 - 5:00:03 PM
Document(s) archivé(s) le : Monday, November 8, 2010 - 3:26:12 PM


  • HAL Id : tel-00508923, version 1



Louis Grenet. Injection de spins dans les semi-conducteurs. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2010. Français. ⟨tel-00508923⟩



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