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Réalisation de jonctions ultra courtes par multi-implantation dans du Si

Abstract : The circuit becomes more and more integrated. Ultra shallow junctions (USJs) formation is a key challenge for realization of the next sub-25nm generation of metal oxide semiconductor field-effect transistor (MOSFET). Ion implantation is now a basic technique in the manufacture of Si based junctions in microelectronic industry. But it generates damages such as interstitials (Is) and vacancies (Vs) and induces several drawback effects, including boron transient enhanced diffusion (TED) and boron-interstitial clusters (BICs). Defect engineering by triple-implantation (He, Si and B) used to overcome these drawback effects for the USJs formation has been studied in this thesis. Each effect of He or Si implantation on B diffusion has been presented in this rapport. The samples are mainly characterized by SIMS, TEM, Hall effect, PAS and NRA. The best solution is that the He implantation followed by an annealing is first performed to create cavities to stop the Is diffusion to the surface. Then Si implantation is realized with a appropriate energy to put the band of cavities located in the middle of the zone of Vs and Is introduced by itself. At last, the B is implanted in a low energy by ion implantation or plasma ion immersion implantation (PIII) to realize the USJ. With this structure, the Vs can recombine with the Is introduced by B implantation to raise the activation rate and to limit the B diffusion when rapidly annealed (RTA). A junction with a depth (Xj) of (12 ± 1) nm and a Rs of (15 0± 10) O/? is achieved.
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Submitted on : Wednesday, June 23, 2010 - 5:51:06 PM
Last modification on : Thursday, March 5, 2020 - 6:49:37 PM
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  • HAL Id : tel-00494619, version 1


Ming Xu. Réalisation de jonctions ultra courtes par multi-implantation dans du Si. Autre [cond-mat.other]. Université d'Orléans, 2009. Français. ⟨NNT : 2009ORLE2047⟩. ⟨tel-00494619⟩



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