K. Aissou, T. Baron, M. Kogelschatz, M. Den-hertog, J. Rouvì-ere et al., Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates, Chemistry of Materials, vol.20, issue.19, p.2061836188, 2008.
DOI : 10.1021/cm800364t
URL : https://hal.archives-ouvertes.fr/hal-00394788

P. Ajayan, L. Schadler, C. Giannaris, and A. Rubio, Single-Walled Carbon Nanotube-Polymer Composites: Strength and Weakness, Advanced Materials, vol.12, issue.10, pp.750-753, 2000.
DOI : 10.1002/(SICI)1521-4095(200005)12:10<750::AID-ADMA750>3.0.CO;2-6

L. Alexandre, Analyse des profils d'intensité diffractée en diffractionélectroniquediffraction´diffractionélectronique en faisceau convergent pour la mesure des déformations locales, 2008.

E. Algra, M. Verheijen, M. Borgströmborgstr¨borgström, L. Feiner, G. Immink et al., Twinning superlattices in indium phosphide nanowires, Nature, vol.60, issue.7220, pp.369-372, 2008.
DOI : 10.1038/nature07570

A. Allaoui, S. Bai, H. Cheng, and J. Bai, Mechanical and electrical properties of a MWNT/epoxy composite, Composites Science and Technology, vol.62, issue.15, pp.1993-1998, 2002.
DOI : 10.1016/S0266-3538(02)00129-X
URL : https://hal.archives-ouvertes.fr/hal-00411072

J. Allen, E. Hemesath, D. Perea, J. Lensch-falk, Z. Li et al., High-resolution detection of Au catalyst atoms in Si nanowires, Nature Nanotechnology, vol.85, issue.3, 2008.
DOI : 10.1038/nnano.2008.5

J. Arbiol, A. F. Morral, S. Estradé, F. Peirópeir´peiró, B. Kalache et al., Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires, Journal of Applied Physics, vol.104, issue.6, p.64312, 2008.
DOI : 10.1063/1.2976338

J. Arbiol, B. Kalache, P. R. Cabarrocas, J. R. Morante, and A. F. Morral, Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour???solid???solid mechanism, Nanotechnology, vol.18, issue.30, p.305606, 2007.
DOI : 10.1088/0957-4484/18/30/305606

P. Atkins, Atkins Physical Chemistry sixth edition, 1999.

J. Ayache, L. Beaunier, J. Boumendil, G. Ehret, and D. Laub, Sample preparation guide for Transmission Electron Microscopy, 2007.

A. Bailly, O. Renault, N. Barrett, L. Zagonel, P. Gentile et al., Direct Quantification of Gold along a Single Si Nanowire, Nano Letters, vol.8, issue.11, p.37093714, 2008.
DOI : 10.1021/nl801952a
URL : https://hal.archives-ouvertes.fr/hal-00394791

S. Bals, B. Kabius, M. Haider, V. Radmilovic, and C. Kisielowski, Annular dark field imaging in a TEM, Solid State Communications, vol.130, issue.10, p.675680, 2004.
DOI : 10.1016/j.ssc.2004.03.035

S. Bals, R. Kilaas, and C. Kisielowski, Nonlinear imaging using annular dark field TEM, Ultramicroscopy, vol.104, issue.3-4, pp.281-289, 2005.
DOI : 10.1016/j.ultramic.2005.05.004

J. Bandet, B. Despax, and M. Caumont, Vibrational and electronic properties of stabilized wurtzite-like silicon, Journal of Physics D: Applied Physics, vol.35, issue.3, p.234239, 2002.
DOI : 10.1088/0022-3727/35/3/311

M. Beleggia, G. Cardinali, P. Fazzini, P. Merli, and G. Pozzi, Influence of the speci,en surfaces on tem images of reverse-biased p-n junctions, Institut of Physics Conference Series, p.427, 2008.

J. Benoit, B. Corraze, S. Lefrant, P. Bernier, C. et al., Electric Transport Properties and Percolation in Carbon Nanotubes / PMMA Composites, Material Research Society Symposium Proceedings, pp.3-28, 2002.
DOI : 10.1126/science.275.5308.1922

J. Bermond, J. Métois, X. Egéa, and F. Floret, The equilibrium shape of silicon, Surface Science, vol.330, issue.1, pp.48-60, 1995.
DOI : 10.1016/0039-6028(95)00230-8

M. Berthe, R. Stiufiuc, B. Grandidier, D. Deresmes, C. Delerue et al., Probing the Carrier Capture Rate of a Single Quantum Level, Science, vol.319, issue.5862, p.436, 2008.
DOI : 10.1126/science.1151186
URL : https://hal.archives-ouvertes.fr/hal-00357378

J. Besson, E. Mokhtari, J. Gonzalez, and G. Weill, Electrical properties of semimetallic silicon III and semiconductive silicon IV at ambient pressure, Physical Review Letters, vol.59, issue.4, p.473, 1987.
DOI : 10.1103/PhysRevLett.59.473

R. Biberger, G. Benstetter, T. Schweinboeck, P. Breitschopf, and H. Goebel, Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling, Microelectronics Reliability, vol.48, issue.8-9, p.13391342, 2008.
DOI : 10.1016/j.microrel.2008.06.013

M. Björkbj¨björk, J. Knoch, H. Schmid, H. Riel, R. et al., Silicon nanowire tunneling field-effect transistors, Applied Physics Letters, vol.92, 2008.

M. Björkbj¨björk, H. Schmid, J. Knoch, H. Riel, R. et al., Donor deactivation in silicon nanostructures, p.103, 2009.

D. Blavette, E. Cadel, A. Fraczkiewicz, and A. Menand, Three-dimensional atomicscale imaging of impurity segregation to line defects, Science, issue.5448, pp.2862317-2319, 1999.

M. Brunet, J. Joud, N. Eustathopoulos, and P. Desré, Tension superficielle du germanium et d'alliages argent-germanium ?? l'??tat liquide, Journal of the Less Common Metals, vol.51, issue.1, pp.69-77, 1976.
DOI : 10.1016/0022-5088(77)90175-8

P. Buffat and J. Borel, Size effect on the melting temperature of gold particles, Physical Review A, vol.13, issue.6, p.2287, 1976.
DOI : 10.1103/PhysRevA.13.2287

P. Buffat, M. Fï-ueli, R. Spycher, P. Stadelmann, and J. Borel, Crystallographic structure of small gold particles studied by high-resolution electron microscopy, Faraday Discuss., vol.80, issue.14, pp.173-187, 1992.
DOI : 10.1039/FD9919200173

D. Buttard, T. David, P. Gentile, M. D. Hertog, T. Baron et al., A new architecture for self-organized silicon nanowire growth integrated on a ???100??? silicon substrate, physica status solidi (a), vol.19, issue.C2, p.1, 2008.
DOI : 10.1002/pssa.200723522
URL : https://hal.archives-ouvertes.fr/hal-00394787

L. Cao, L. Laim, C. Ni, B. Nabet, and J. Spanier, Diamond-Hexagonal Semiconductor Nanocones with Controllable Apex Angle, Journal of the American Chemical Society, vol.127, issue.40, pp.13782-203, 2005.
DOI : 10.1021/ja0544814
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.472.2540

A. Carim, K. Lew, R. , and J. , Bicrystalline Silicon Nanowires, Advanced Materials, vol.13, issue.19, p.1489, 2001.
DOI : 10.1002/1521-4095(200110)13:19<1489::AID-ADMA1489>3.0.CO;2-E

P. Caroff, K. Dick, J. Johansson, M. Messing, K. Deppert et al., Controlled polytypic and twin-plane superlattices in iii???v nanowires, Nature Nanotechnology, vol.12, issue.1, pp.50-55, 2008.
DOI : 10.1038/nnano.2008.359
URL : https://hal.archives-ouvertes.fr/hal-00471903

C. Cayron, grain boundaries, Acta Crystallographica Section A Foundations of Crystallography, vol.63, issue.1, pp.11-29, 2007.
DOI : 10.1107/S0108767306044291

C. Cayron, M. Den-hertog, L. Latu-romain, C. Mouchet, C. Secouard et al., Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins, Journal of Applied Crystallography, vol.42, issue.2, pp.242-252, 2009.
DOI : 10.1107/S0021889808042131
URL : https://hal.archives-ouvertes.fr/hal-00394399

C. Chan, H. Peng, G. Liu, K. Mcilwrath, X. Zhang et al., High-performance lithium battery anodes using silicon nanowires, Nature Nanotechnology, vol.4, issue.8, p.31, 2008.
DOI : 10.1038/nnano.2007.411

J. Chapman, The investigation of magnetic domain structures in thin foils by electron microscopy, Journal of Physics D: Applied Physics, vol.17, issue.4, p.623, 1984.
DOI : 10.1088/0022-3727/17/4/003

H. Chen, Y. Gao, H. Yu, H. Zhang, L. Liu et al., Structural properties of silver nanorods with fivefold symmetry, Micron, vol.35, issue.6, pp.469-474, 2004.
DOI : 10.1016/j.micron.2004.02.008

J. Chen, J. Gaydos, and A. Neumann, Contact Line Quadrilateral Relation. Generalization of the Neumann Triangle Relation To Include Line Tension, Langmuir, vol.12, issue.24, p.5956, 1996.
DOI : 10.1021/la960291i

D. Cherns, Direct resolution of surface atomic steps by transmission electron microscopy, Philosophical Magazine, vol.87, issue.3, p.549, 1974.
DOI : 10.1080/14786439808206580

K. Cho, S. Suk, Y. Yeoh, M. Li, K. Yeo et al., Temperature-dependent characteristics of cylindrical gate-all-around twin silicon nanowire mosfets (tsnwfets) IEEE Electron Device Letters, p.280741, 2007.

S. Choi, Z. Zhang, W. Yu, F. Lockwood, and E. Grulke, Anomalous thermal conductivity enhancement in nanotube suspensions, Applied Physics Letters, vol.79, issue.14, pp.2252-2254, 2001.
DOI : 10.1063/1.1408272

J. Chung and L. Rabenberg, Mapping of electrostatic potentials within core-shell nanowires by electron holography, Applied Physics Letters, vol.88, issue.1, p.13106, 2006.
DOI : 10.1063/1.2159560

V. Cimalla, M. Stubenrauch, F. Weise, M. Fischer, K. Tonisch et al., Suspended nanowire web, Applied Physics Letters, vol.90, issue.10, p.101504, 2007.
DOI : 10.1063/1.2711753

G. Cohen, Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain, Applied Physics Letters, vol.90, issue.23, p.233110, 2007.
DOI : 10.1063/1.2746946

D. Cooper, Off-axis electron holography of focused ion beam prepared semiconductor devices, 2006.

D. Cooper, C. Ailliot, R. Truche, J. Barnes, J. Hartmann et al., Experimental off-axis electron holography of focused ion beam-prepared Si p-n junctions with different dopant concentrations, Journal of Applied Physics, vol.104, issue.6, p.64513, 2008.
DOI : 10.1063/1.2982415

D. Cooper, R. Truche, P. Rivallin, J. Hartmann, F. Laugier et al., Medium resolution off-axis electron holography with millivolt sensitivity, Applied Physics Letters, vol.91, issue.14, p.143501, 2007.
DOI : 10.1063/1.2794006

D. Cooper, A. Twitchett-harrison, P. Midgley, and R. Dunin-borkowski, The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions, Journal of Applied Physics, vol.101, issue.9, p.94508, 2007.
DOI : 10.1063/1.2730557

J. Cowley, Twenty forms of electron holography, Ultramicroscopy, vol.41, issue.4, p.335, 1992.
DOI : 10.1016/0304-3991(92)90213-4

J. Cowley and J. Spence, Handbook of Nanostructured Materials and Nanotechnology: Chaper 1 Nanodiffraction, 2000.

Y. Cui, L. Lauhon, M. Gudiksen, J. Wang, and C. Lieber, Diameter-controlled synthesis of single-crystal silicon nanowires, Applied Physics Letters, vol.78, issue.15, p.2214, 2001.
DOI : 10.1063/1.1363692

U. Dahmen, C. Hetherington, P. Pirouz, and K. Westmacott, The formation of hexagonal silicon at twin intersections, Scripta Metallurgica, vol.23, issue.2, p.269, 1989.
DOI : 10.1016/0036-9748(89)90424-9

T. David, D. Buttard, T. Schüllisch¨schülli, F. Dallhuin, and P. Gentile, Structural investigation by gixrd and gisaxs of silicon nanowires : Evidence of a complex saw-tooth faceting, Surface Science, issue.15, pp.6022675-2680, 2008.

W. De-ruijter and J. Weiss, Detection limits in quantitative off-axis electron holography, Ultramicroscopy, vol.50, issue.3, pp.269-283, 1993.
DOI : 10.1016/0304-3991(93)90196-5

M. Den-hertog, J. Rouviere, F. Dhalluin, P. Desré, P. Gentile et al., Control of Gold Surface Diffusion on Si Nanowires, Nano Letters, vol.8, issue.5, p.1544, 2008.
DOI : 10.1021/nl073356i
URL : https://hal.archives-ouvertes.fr/hal-00394786

P. Desré, Chapitre II, Thermodynamique des solutions, 2006.

F. Dhalluin, Nanofils de silicium: Dépôt chimique en phase vapeur assisté par catalyseurs métalliques et prémices d'intégration, 2009.

F. Dhalluin, P. Desré, M. Den-hertog, J. Rouvì-ere, P. Ferret et al., Critical condition for growth of silicon nanowires, Journal of Applied Physics, vol.102, issue.9, p.94906, 2007.
DOI : 10.1063/1.2811935
URL : https://hal.archives-ouvertes.fr/hal-00394770

M. Diarra, Y. Niquet, C. Delerue, A. , and G. , Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement, Physical Review B, vol.75, issue.4, p.45301, 2007.
DOI : 10.1103/PhysRevB.75.045301
URL : https://hal.archives-ouvertes.fr/hal-00283119

K. Dick, K. Deppert, M. Larsson, T. Mårtensson, W. Seifert et al., Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events, Nature Materials, vol.14, issue.6, pp.380-384, 2004.
DOI : 10.1038/353737a0

E. Dickson and D. W. Pashley, Double positioning in silver and gold layers deposited on mica, Philosophical Magazine, vol.7, issue.80, p.1315, 1962.
DOI : 10.1002/andp.19374220604

E. Dornel, T. Ernst, J. Barbé, J. Hartmann, V. Delaye et al., Synthesis of zno nanorod on bare si substrate using metal organic chemical vapor deposition, Applied Physics Letters, issue.23, p.91233502, 2007.

P. Doyle and P. Turner, Relativistic Hartree???Fock X-ray and electron scattering factors, Acta Crystallographica Section A, vol.24, issue.3, p.390, 1968.
DOI : 10.1107/S0567739468000756

C. Dupré, T. Ernst, V. Maffini-alvaro, V. Delaye, J. Hartmann et al., 3D nanowire gate-all-around transistors: Specific integration and electrical features, Solid-State Electronics, vol.52, issue.4, pp.519-525, 2008.
DOI : 10.1016/j.sse.2007.10.050

D. Eastman, Photoelectric Work Functions of Transition, Rare-Earth, and Noble Metals, Physical Review B, vol.2, issue.1, p.1, 1970.
DOI : 10.1103/PhysRevB.2.1

P. Eyben, T. Janssens, and W. Vandervorst, Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies, Materials Science and Engineering: B, vol.124, issue.125, p.4553, 2005.
DOI : 10.1016/j.mseb.2005.08.049

P. Fazzini, P. Merli, G. Pozzi, and F. Ubaldi, junctions by electron interferometry, Physical Review B, vol.72, issue.8, p.85312, 2005.
DOI : 10.1103/PhysRevB.72.085312

P. Fejes, Approximations for the calculation of high-resolution electron-microscope images of thin films, Acta Crystallographica Section A, vol.33, issue.1, p.109, 1977.
DOI : 10.1107/S0567739477000230

A. Fissel, E. Bugiel, C. Wang, and H. Osten, Formation of Si twinning-superlattice: First step towards Si polytype growth, Materials Science and Engineering: B, vol.134, issue.2-3, pp.138-141, 2006.
DOI : 10.1016/j.mseb.2006.06.046

A. Fontcuberta-i-morral, J. Arbiol, J. Prades, A. Cirera, and J. Morante, Synthesis of Silicon Nanowires with Wurtzite Crystalline Structure by Using Standard Chemical Vapor Deposition, Advanced Materials, vol.7, issue.10, p.1347, 2007.
DOI : 10.1002/adma.200602318

P. Formanek, TEM-Holographie of Microelectronic Device Structures, 2004.

G. Fowles, Introduction to Modern Optics, American Journal of Physics, vol.36, issue.8, 1989.
DOI : 10.1119/1.1975142

J. Frank, The envelope function of electron microscopic transfer function for partially coherent illumination, Optik, vol.38, issue.5, p.519, 1973.

T. Fujita, K. Yamamoto, M. Mccartney, and D. Smith, Reconstruction technique for off-axis electron holography using coarse fringes, Ultramicroscopy, vol.106, issue.6, p.486491, 2006.
DOI : 10.1016/j.ultramic.2006.01.003

D. Gabor, A New Microscopic Principle, Nature, vol.161, issue.4098, p.777, 1948.
DOI : 10.1038/161777a0

R. Ghostagore, Experimental-Condition Dependence of Phosphorus Diffusivity in Silicon, Physical Review Letters, vol.25, issue.13, p.25856, 1970.
DOI : 10.1103/PhysRevLett.25.856

E. Givargizov, Fundamental aspects of VLS growth, Journal of Crystal Growth, vol.31, p.20, 1975.
DOI : 10.1016/0022-0248(75)90105-0

M. Haider, G. Braunhausen, and E. Schwan, Correction of the spherical aberration of a 200 kv tem by means of a hexapole-corrector, Optik, vol.99, p.167, 1995.

J. Hannon, S. Kodambaka, F. Ross, and R. Tromp, The influence of the surface migration of gold on the growth of silicon nanowires, Nature, vol.151, issue.7080, p.69, 2006.
DOI : 10.1038/nature04574

M. Hansen and K. Anderko, Composition of Binary Alloys, 1958.

D. Hardy, Dissertation, 1967.

A. Harscher and H. Lichte, Experimental study of amplitude and phase detection limits in electron holography, Ultramicroscopy, vol.64, issue.1-4, pp.57-66, 1996.
DOI : 10.1016/0304-3991(96)00019-8

S. Hassam, M. Gaune-escard, J. Bros, and B. Bunsenges, Enthalpies of Formation of Ag - Si, Au - Si and Ag - Au - Si Liquid Alloys at 1423 K, Berichte der Bunsengesellschaft f??r physikalische Chemie, vol.1, issue.9, p.785, 1983.
DOI : 10.1002/bbpc.19830870913

R. He, X. Feng, M. Roukes, Y. , and P. , Self-Transducing Silicon Nanowire Electromechanical Systems at Room Temperature, Nano Letters, vol.8, issue.6, pp.1756-1761, 2008.
DOI : 10.1021/nl801071w

H. Hely, Testing of an improved corrected electron microscope, Optik, vol.60, p.353, 1982.

M. Hendriks, S. Radelaar, A. Beers, and J. Bloem, Additional X-ray and electron diffraction peaks of polycrystalline silicon films, Thin Solid Films, vol.113, issue.1, p.59, 1984.
DOI : 10.1016/0040-6090(84)90388-2

R. Hild, C. Seifert, M. Kammler, F. M. Zu-heringdorf, M. H. Hoegen et al., Kinetics of Au induced faceting of vicinal Si(), Kinetics of au induced faceting of vicinal si, p.117, 2002.
DOI : 10.1016/S0039-6028(02)01666-7

A. Hochbaum, R. Chen, R. Delgado, W. Liang, E. Garnett et al., Enhanced thermoelectric performance of rough silicon nanowires, Nature, vol.3, issue.7175, p.163, 2008.
DOI : 10.1038/nature06381

S. Hofmann, R. Sharma, C. Wirth, F. Cervantes-sodi, C. Ducati et al., Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth, Nature Materials, vol.91, issue.2, 2008.
DOI : 10.1038/nmat2140

L. Houben, M. Luysberg, and T. Brammer, junctions in transmission electron microscopy, Physical Review B, vol.70, issue.16, p.165313, 2004.
DOI : 10.1103/PhysRevB.70.165313

F. Houdellier, Contribution au développement du CBED et de l'holographie HREM pour l'analyse des déformations de couchesépitaxiéescouches´couchesépitaxiées, 2006.

K. Hoummada, D. Mangelinck, E. Cadel, C. Perrin-pellegrino, D. Blavette et al., Formation of Ni silicide at room temperature studied by laser atom probe tomography: Nucleation and lateral growth, Microelectronic Engineering, vol.84, issue.11, pp.2517-2522, 2007.
DOI : 10.1016/j.mee.2007.05.051

H. ¨-ytch, M. J. Snoeck, E. Kilaas, and R. , Quantitative measurement of displacement and strain fields from hrem micrographs, Ultramicroscopy, issue.9, p.74131, 1998.

J. Ibers, Atomic scattering amplitudes for electrons, Acta Crystallographica, vol.11, issue.3, p.11, 1958.
DOI : 10.1107/S0365110X58000475

S. Iijima, Helical microtubules of graphitic carbon, Nature, vol.354, issue.6348, p.56, 1991.
DOI : 10.1038/354056a0

K. Ikejiri, J. Noborisaka, S. Hara, J. Motohisa, and T. Fukui, Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE, Journal of Crystal Growth, vol.298, pp.616-207, 2007.
DOI : 10.1016/j.jcrysgro.2006.10.179

Z. Iqbal and S. Veprek, Raman scattering from hydrogenated microcrystalline and amorphous silicon, Journal of Physics C: Solid State Physics, vol.15, issue.2, pp.377-392, 1982.
DOI : 10.1088/0022-3719/15/2/019

K. Ishizuka, Optimized sampling schemes for off-axis holography, Ultramicroscopy, vol.52, issue.1, pp.1-5, 1993.
DOI : 10.1016/0304-3991(93)90017-R

M. Jeon and K. Kamisako, Synthesis of silicon nanowires after hydrogen radical treatment, Materials Letters, vol.62, issue.23, p.3903, 2008.
DOI : 10.1016/j.matlet.2008.05.035

J. Johansson, L. Karlsson, C. Patrik, T. Svensson, T. Mårtensson et al., Structural properties of ???111???B -oriented III???V nanowires, Nature Materials, vol.171, issue.7, p.574, 2006.
DOI : 10.1023/A:1010012802415

B. Kalkofen, M. Lisker, and E. Burte, Phosphorus diffusion into silicon after vapor phase surface adsorption of phosphine, Materials Science and Engineering: B, vol.124, issue.125, pp.124-125288, 2005.
DOI : 10.1016/j.mseb.2005.08.012

T. Kempa, B. Tian, D. Kim, J. Hu, X. Zheng et al., Nanowire Photovoltaic Devices, Nano Letters, vol.8, issue.10, pp.3456-3460, 2008.
DOI : 10.1021/nl8023438

B. Kilbride, Experimental observation of scaling laws for alternating current and direct current conductivity in polymer-carbon nanotube composite thin films, Journal of Applied Physics, vol.92, issue.7, pp.4024-4030, 2002.
DOI : 10.1063/1.1506397

K. Kim and H. Kim, Synthesis of ZnO nanorod on bare Si substrate using metal organic chemical vapor deposition, Physica B: Condensed Matter, vol.328, issue.3-4, p.368371, 2003.
DOI : 10.1016/S0921-4526(02)01954-3

S. Kodambaka, J. Hannon, R. Tromp, R. , and F. , Control of Si Nanowire Growth by Oxygen, Nano Letters, vol.6, issue.6, p.1292, 2006.
DOI : 10.1021/nl060059p

S. Kodambaka, J. Tersoff, M. Reuter, R. , and F. , Diameter-Independent Kinetics in the Vapor-Liquid-Solid Growth of Si Nanowires, Physical Review Letters, vol.96, issue.9, p.96105, 2006.
DOI : 10.1103/PhysRevLett.96.096105

S. Kodambaka, J. Tersoff, M. Reuter, R. , and F. , Germanium Nanowire Growth Below the Eutectic Temperature, Science, vol.316, issue.5825, p.729, 2007.
DOI : 10.1126/science.1139105

H. Kohno, N. Ozaki, H. Yoshida, K. Tanaka, and S. Takeda, Misleading fringes in TEM images and diffraction patterns of Si nanocrystallites, Crystal Research and Technology, vol.38, issue.12, pp.381082-1086, 2003.
DOI : 10.1002/crat.200310140

H. Koops, G. Kuck, and O. Scherzer, Testing of an electron optical achromator, Optik, vol.48, p.225, 1977.

B. Korgel, D. Lee, T. Hanrath, M. Yacaman, A. Thesen et al., Application of Aberration-Corrected TEM and Image Simulation to Nanoelectronics and Nanotechnology, IEEE Transactions on Semiconductor Manufacturing, vol.19, issue.4, p.391, 2006.
DOI : 10.1109/TSM.2006.884713

E. Kreyszig, Advanced Engineering Mathematics 8th edition, 1999.

O. Krivanek, Tahoe workshop on eels, 1991.

P. Kruse, M. Schowalter, D. Lamoen, A. Rosenauer, and D. Gerthsen, Determination of the mean inner potential in III???V semiconductors, Si and Ge by density functional theory and electron holography, Ultramicroscopy, vol.106, issue.2, pp.105-113, 2006.
DOI : 10.1016/j.ultramic.2005.06.057

F. Lancon, J. Penisson, and U. Damen, Quasicrystalline gold interface with a hypo-friction property, Europhysics Letters (EPL), vol.49, issue.5, p.603, 2000.
DOI : 10.1209/epl/i2000-00193-6

L. Latu-romain, C. Mouchet, C. Cayron, E. Rouviere, and J. Simonato, Growth parameters and shape specific synthesis of silicon nanowires by the VLS method, Journal of Nanoparticle Research, vol.2, issue.12, pp.1388-0764, 2008.
DOI : 10.1007/s11051-007-9350-3
URL : https://hal.archives-ouvertes.fr/hal-00394394

S. Lee, T. Kim, S. Lee, K. Choi, Y. et al., High-brightness gallium nitride nanowire UV???blue light emitting diodes, Philosophical Magazine, vol.87, issue.14-15, pp.2105-2115, 2007.
DOI : 10.1016/j.electacta.2005.04.068

S. Lee, T. Minegishi, J. Park, S. Park, J. Ha et al., Ordered Arrays of ZnO Nanorods Grown on Periodically Polarity-Inverted Surfaces, Nano Letters, vol.8, issue.8, pp.2419-2422, 2008.
DOI : 10.1021/nl801344s

M. Lehmann, Influence of the elliptical illumination on acquisition and correction of coherent aberrations in high-resolution electron holography, Ultramicroscopy, vol.100, issue.1-2, pp.9-23, 2004.
DOI : 10.1016/j.ultramic.2004.01.005

M. Lehmann, E. Lenz, and F. , Reconstruction of electron off-axis holograms: a new and fast alternative method, Ultramicroscopy, vol.54, issue.2-4, pp.335-344, 1994.
DOI : 10.1016/0304-3991(94)90133-3

F. Lenz, Statistics of phase and contrast determination in electron holograms, Optik, vol.79, issue.1, pp.13-14, 1988.

C. Li, C. Gu, Z. Liu, J. Mi, Y. et al., Iron-catalytic growth of prism-shaped single-crystal silicon nanowires by chemical vapor deposition of silane, Chemical Physics Letters, vol.411, issue.1-3, p.198, 2005.
DOI : 10.1016/j.cplett.2005.05.117

H. Lichte, Optimum focus for taking electron holograms, Ultramicroscopy, vol.38, issue.1, pp.12-22, 1991.
DOI : 10.1016/0304-3991(91)90105-F

H. Lichte, Esteem holography workshop, 2008.

H. Lichte, Performance limits of electron holography, Ultramicroscopy, vol.108, issue.3, p.256, 2008.
DOI : 10.1016/j.ultramic.2007.06.006

M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski et al., Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope, Applied Physics Letters, vol.93, issue.14, p.142101, 2008.
DOI : 10.1063/1.2992202

M. Fernández-serra, C. A. Blase, and X. , Surface Segregation and Backscattering in Doped Silicon Nanowires, Physical Review Letters, vol.96, issue.16, p.166805, 2006.
DOI : 10.1103/PhysRevLett.96.166805

M. Mankos, M. Scheinfein, and J. Cowley, Electron Holography and Lorentz Microscopy of Magnetic Materials, Advanced Imaging Electron Physics, vol.98, pp.323-426, 1996.
DOI : 10.1016/S1076-5670(08)70168-X

T. Massalski, Binary Alloy Phase Diagram American Society for Metal, 1990.

A. Masseboeuf, De l'observation du magnétimsè a l'´ echelle du nanomètre, 2008.

M. Matijevic, H. Stegmann, E. Essers, and G. Benner, Recent Results of an in-column Energy Filter TEM with Monochromator, Microscopy and Microanalysis, vol.13, issue.S02, p.1160, 2007.
DOI : 10.1017/S1431927607074570

G. Matteucci, G. Missiroli, E. Nichelatti, A. Migliori, M. Vanzi et al., Electron holography of long???range electric and magnetic fields, Journal of Applied Physics, vol.69, issue.4, pp.1835-1842, 1991.
DOI : 10.1063/1.348970

B. Mayers and Y. Xia, One-dimensional nanostructures of trigonal tellurium with various morphologies can be synthesized using a solution-phase approach, Journal of Materials Chemistry, vol.12, issue.6, p.121875, 2002.
DOI : 10.1039/b201058e

D. Mcquarrie and J. Simon, Physical Chemistry, a molecular approach, 1997.

P. Midgley, An introduction to off-axis electron holography, Micron, vol.32, issue.2, pp.167-184, 2001.
DOI : 10.1016/S0968-4328(99)00105-5

H. Minoda, K. Yagi, F. M. Zu-heringdorf, A. Meier, D. Kähler et al., Gold-induced faceting on a Si(001) vicinal surface:???Spot-profile-analyzing LEED and reflection-electron-microscopy study, Physical Review B, vol.59, issue.3, p.2363, 1999.
DOI : 10.1103/PhysRevB.59.2363

G. Missiroli, G. Pozzi, and U. Valdre, Electron interferometry and interference electron microscopy, Journal of Physics E: Scientific Instruments, vol.14, issue.6, pp.649-671, 1981.
DOI : 10.1088/0022-3735/14/6/001

Y. Miyamoto and M. Hirata, Polytypism and Amorphousness in Silicon Whiskers, Journal of the Physical Society of Japan, vol.44, issue.1, p.181, 1978.
DOI : 10.1143/JPSJ.44.181

S. Molina, A. Sánchez, A. Beltrán, D. Sales, T. Ben et al., Incorporation of Sb in InAs???GaAs quantum dots, Applied Physics Letters, vol.91, issue.26, p.263105, 2007.
DOI : 10.1063/1.2826546

A. Moore, S. Saha, R. Prasher, and L. Shi, Phonon backscattering and thermal conductivity suppression in sawtooth nanowires, Applied Physics Letters, vol.93, issue.8, p.83112, 2008.
DOI : 10.1063/1.2970044

C. Mouchet, Croissance de nanofils de silicium et de Si/SiGe, 2008.
URL : https://hal.archives-ouvertes.fr/tel-00345969

M. ¨-uller, P. Métois, and J. , Anisotropy of the surface thermodynamic properties of silicon, Thin Solid Films, vol.517, issue.1, pp.65-68, 2008.

C. Nam and J. Fischer, Self-branching in gan nanowires induced by a novel vaporliquid-solid mechanism, MRS Proceedings, volume session JJ4.3, p.832, 2008.

E. Nicollian and J. Brews, MOS (Metal Oxide Semiconductor Physics and Technology, 1982.

Y. Niquet, A. Lherbier, N. Quang, M. Fernndez-serra, X. Blase et al., Electronic structure of semiconductor nanowires, Physical Review B, vol.73, issue.16, p.165319, 2006.
DOI : 10.1103/PhysRevB.73.165319
URL : https://hal.archives-ouvertes.fr/hal-00127831

F. Oehler, P. Gentile, T. Baron, M. Den-hertog, J. Rouvì-ere et al., The morphology of silicon nanowires grown in the presence of trimethylaluminium, Nanotechnology, vol.20, issue.24, 2009.
DOI : 10.1088/0957-4484/20/24/245602
URL : https://hal.archives-ouvertes.fr/hal-00455406

F. Oehler, P. Gentile, T. Baron, P. Ferret, and N. Magnea, Controlling the growth of si nanowires with reactive chlorine: beyond the classical vapour-liquid-solid model, 2009.

R. Olsen, S. B?adescub?adescu, S. Ying, and E. Baerends, Adsorption and diffusion on a stepped surface: Atomic hydrogen on Pt(211), The Journal of Chemical Physics, vol.120, issue.24, p.11852, 2004.
DOI : 10.1063/1.1755664

A. Ourmazd, J. Rentschler, T. , and D. , Direct Resolution and Identification of the Sublattices in Compound Semiconductors by High-Resolution Transmission Electron Microscopy, Physical Review Letters, vol.57, issue.24, p.3073, 1986.
DOI : 10.1103/PhysRevLett.57.3073

L. Pan, K. Lew, J. Redwing, D. , and E. , Effect of diborane on the microstructure of boron-doped silicon nanowires, Journal of Crystal Growth, vol.277, issue.1-4, p.428, 2005.
DOI : 10.1016/j.jcrysgro.2005.01.091

Z. Pan, Z. Dai, W. , and Z. , Nanobelts of Semiconducting Oxides, Science, vol.291, issue.5510, 1947.
DOI : 10.1126/science.1058120

W. Park, D. Kim, S. Jung, Y. , and G. , Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods, Applied Physics Letters, vol.80, issue.22, p.4232, 2002.
DOI : 10.1063/1.1482800

Y. Park, S. Lee, J. Oh, C. Park, and T. Kang, Self-assembled GaN nano-rods grown directly on (111) Si substrates: Dependence on growth conditions, Journal of Crystal Growth, vol.282, issue.3-4, pp.313-319, 2005.
DOI : 10.1016/j.jcrysgro.2005.05.058

J. Parsons and C. Hoelke, Hexagonal germanium and high-resolution electron microscopy, Philosophical Magazine A, vol.45, issue.3, p.329, 1984.
DOI : 10.1080/01418618408244231

D. Pashley and M. Stowell, Electron microscopy and diffraction of twinned structures in evaporated films of gold, Philosophical Magazine, vol.17, issue.94, p.1605, 1963.
DOI : 10.1080/14786435708243208

H. Peng, C. Xie, D. Schoen, C. , and Y. , Nanowires, Nano Letters, vol.8, issue.5, pp.1511-1516, 2008.
DOI : 10.1021/nl080524d
URL : https://hal.archives-ouvertes.fr/hal-01229159

S. Pennycook, Structure determination through z-contrast microscopy Advances in Imaging and Electron Physics, p.173, 2002.

S. Pennycook and P. Nellist, Z-Contrast Scanning Transmission Electron Microscopy, Impact of Electron and Scanning Probe Microscopy on Materials Research, pp.161-207, 1999.
DOI : 10.1007/978-94-011-4451-3_7

C. Poland, R. Duffin, I. Kinloch, A. Maynard, W. Wallace et al., Carbon nanotubes introduced into the abdominal cavity of mice show asbestos-like pathogenicity in a pilot study, Nature Nanotechnology, vol.67, issue.7, pp.423-428, 2008.
DOI : 10.1038/nnano.2008.111

R. Popescu, E. Muller, M. Wanner, D. Gerthsen, M. Schowalter et al., Increase of the mean inner Coulomb potential in Au clusters induced by surface tension and its implication for electron scattering, Physical Review B, vol.76, issue.23, p.76235411, 2007.
DOI : 10.1103/PhysRevB.76.235411

P. Potapov, J. Verbeeck, P. Schattschneider, H. Lichte, and D. Van-dyck, Inelastic electron holography as a variant of the Feynman thought experiment, Ultramicroscopy, vol.107, issue.8, pp.559-567, 2007.
DOI : 10.1016/j.ultramic.2006.11.003

J. Prades, J. Arbiol, A. Cirera, J. Morante, and A. F. Morral, Concerning the 506 cm ?1 band in the raman spectrum of silicon nanowires, Applied Physics Letters, issue.12, p.91123107, 2007.

C. Putnam, M. Filler, B. Kayes, M. Kelzenberg, and H. Atwater, Nanoscale chemical characterization of vapor-liquid-solid grown silicon wires by secondary ion mass spetrometry, MRS Fall Proceedings, p.835, 2007.

G. Radi, Complex lattice potentials in electron diffraction calculated for a number of crystals, Acta Crystallographica Section A, vol.26, issue.1, p.41, 1970.
DOI : 10.1107/S0567739470000050

W. Rau, P. Schwander, F. Baumann, W. Oppner, and A. Ourmazd, Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography, Physical Review Letters, vol.82, issue.12, p.822614, 1999.
DOI : 10.1103/PhysRevLett.82.2614

W. Reddick and A. Amaratunga, Silicon surface tunnel transistor, Applied Physics Letters, vol.67, issue.4, p.495, 1995.
DOI : 10.1063/1.114547

B. Ressel, K. Prince, and S. Heun, Wetting of Si surfaces by Au???Si liquid alloys, Journal of Applied Physics, vol.93, issue.7, p.3886, 2003.
DOI : 10.1063/1.1558996

H. Rose and C. Kisielowski, On the Reciprocity of TEM and STEM, Microscopy and Microanalysis, vol.11, issue.S02, p.2114, 2005.
DOI : 10.1017/S1431927605507761

F. Ross, J. Tersoff, and M. Reuter, Sawtooth Faceting in Silicon Nanowires, Physical Review Letters, vol.95, issue.14, p.146104, 2005.
DOI : 10.1103/PhysRevLett.95.146104

P. Schattschneider, M. Nelhiebel, H. Souchay, and B. Jouffrey, The physical significance of the mixed dynamic form factor, Micron, vol.31, issue.4, p.333345, 2000.
DOI : 10.1016/S0968-4328(99)00112-2

H. Schmid, M. Björkbj¨björk, J. Knoch, S. Karg, H. Riel et al., situ Doped Silicon Nanowires Using Phosphine, Nano Letters, vol.9, issue.1, pp.173-177, 2009.
DOI : 10.1021/nl802739v

H. Schmid, M. Björkbj¨björk, J. Knoch, H. Riel, W. Riess et al., Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane, Journal of Applied Physics, vol.103, issue.2, p.24304, 2007.
DOI : 10.1063/1.2832760

V. Schmidt, G. ¨-osele, and U. , Confidential meeting for node project, 2008.

V. Schmidt, S. Senz, G. ¨-osele, and U. , The shape of epitaxially grown silicon nanowires and the influence of line tension, Applied Physics A, vol.93, issue.3, p.445, 2004.
DOI : 10.1063/1.1558996

V. Schmidt, S. Senz, G. , and U. , Diameter-Dependent Growth Direction of Epitaxial Silicon Nanowires, Nano Letters, vol.5, issue.5, p.931, 2005.
DOI : 10.1021/nl050462g

V. Schmidt, S. Senz, G. ¨-osele, and U. , Diameter dependence of the growth velocity of silicon nanowires synthesized via the vapor-liquid-solid mechanism, Physical Review B, vol.75, issue.4, p.45335, 2007.
DOI : 10.1103/PhysRevB.75.045335

V. Schmidt, S. Senz, G. ¨-osele, and U. , Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires, Applied Physics A, vol.19, issue.2, pp.187-191, 2007.
DOI : 10.1007/s00339-006-3746-2

M. Schofield, M. Beleggia, Y. Zhu, and G. Pozzi, Characterization of JEOL 2100F Lorentz-TEM for low-magnification electron holography and magnetic imaging, Ultramicroscopy, vol.108, issue.7, pp.625-634, 2008.
DOI : 10.1016/j.ultramic.2007.10.015

L. Seehofer, S. Huths, G. Falkenberg, J. , and R. , Gold-induced facetting of Si(111), Surface Science, vol.329, issue.3, p.157, 1995.
DOI : 10.1016/0039-6028(95)00058-5

O. Shpyrko, R. Streitel, V. Balagurusamy, A. Grigoriev, M. Deutsch et al., Surface Crystallization in a Liquid AuSi Alloy, Science, vol.313, issue.5783, p.7, 2006.
DOI : 10.1126/science.1128314
URL : http://arxiv.org/abs/cond-mat/0607178

N. Singh, High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices, IEEE Electron Device Letters, vol.27, issue.5, p.383, 2006.
DOI : 10.1109/LED.2006.873381

J. Slezák, M. Ond?ej?ek, Z. Chvoj, C. , and V. , Surface diffusion of Au on Si(111): A microscopic study, Physical Review B, vol.61, issue.23, p.6116121, 2000.
DOI : 10.1103/PhysRevB.61.16121

J. Spence and J. Zuo, Electron Microdiffraction, 1992.

H. Spoon, Mid-infrared Spectroscopy of Dusty Galactic Nuclei, 2003.

N. Stoddard, G. Duscher, W. Windl, R. , and G. , A new understanding of near-threshold damage for 200 keV irradiation in silicon, Journal of Materials Science, vol.32, issue.14, pp.3639-3650, 2005.
DOI : 10.1007/s10853-005-1059-z

Y. Sun, R. Graff, M. Strano, R. , and J. , Top-Down Fabrication of Semiconductor Nanowires with Alternating Structures along their Longitudinal and Transverse Axes, Small, vol.15, issue.11, pp.1052-1057, 2005.
DOI : 10.1002/smll.200500094

S. Sze, Semiconductor devices Physics and Technology, 1985.
DOI : 10.1002/0470068329
URL : http://dx.doi.org/10.1016/s1369-7021(03)00132-9

A. Tavendale and S. Pearton, Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel, Journal of Physics C: Solid State Physics, vol.16, issue.9, p.1665, 1983.
DOI : 10.1088/0022-3719/16/9/011

C. Thelander, L. Fröbergfr¨fröberg, C. Rehnstedt, L. Samuelson, and L. Wernersson, Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate, IEEE Electron Device Letters, vol.29, issue.3, p.206, 2008.
DOI : 10.1109/LED.2007.915374

T. Kawashima, T. Mizutani, T. Nakagawa, H. Torii, T. Saitoh et al., Control of Surface Migration of Gold Particles on Si Nanowires, Nano Letters, vol.8, issue.1, 2008.
DOI : 10.1021/nl072366g

L. Tsakalakos, Nanostructures for photovoltaics, Materials Science and Engineering: R: Reports, vol.62, issue.6, 2008.
DOI : 10.1016/j.mser.2008.06.002

H. Tuan, A. Ghezelbash, and B. Korgel, Silicon Nanowires and Silica Nanotubes Seeded by Copper Nanoparticles in an Organic Solvent, Chemistry of Materials, vol.20, issue.6, p.2306, 2008.
DOI : 10.1021/cm703304r

M. Turner, V. Golovko, O. Vaughan, P. Abdulkin, A. Berenguer-murcia et al., Selective oxidation with dioxygen by gold nanoparticle catalysts derived from 55-atom clusters, Nature, vol.6, issue.7207, pp.981-983, 2008.
DOI : 10.1038/nature07194

A. Twitchett, R. Dunin-borkowski, R. Broom, and P. Midgley, Quantitative electron BIBLIOGRAPHY 213, 2004.

A. Twitchett, R. Dunin-borkowski, and P. Midgley, Quantitative electron holography of biased semiconductor devices, Physical Review Letters, issue.23, p.88238302, 2002.

J. Verbeeck, D. Van-dyck, H. Lichte, P. Potapov, and P. Schattschneider, Plasmon holographic experiments: theoretical framework, Ultramicroscopy, vol.102, issue.3, p.239255, 2005.
DOI : 10.1016/j.ultramic.2004.10.005

V. ¨-olkl, E. Allard, L. , and D. J. , Introduction to Electron Holography. Academic, 1999.

P. Voyles, D. Muller, J. Grazul, P. Citrin, and H. Gossmann, Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si, Nature, vol.416, issue.6883, p.826, 2002.
DOI : 10.1038/416826a

R. Wagner, Branching, kinking and defect formation during vls growth, Proceedings of an international conference on crystal growth, p.347, 1966.

R. Wagner and C. Doherty, Mechanism of Branching and Kinking during VLS Crystal Growth, Journal of The Electrochemical Society, vol.115, issue.1, p.93, 1968.
DOI : 10.1149/1.2411032

S. Walck and J. Mccaffrey, The small angle cleavage techique applied to coatings and thin films, Thin Solid Films, vol.399, p.308, 1997.

J. Wang, A. Rahman, G. Klimeck, and M. Lundstrom, Bandstructure and orientation effects in ballistic si and ge nanowire FETs, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005.
DOI : 10.1109/IEDM.2005.1609399

Y. Wang, V. Schmidt, S. Senz, G. ¨-osele, and U. , Epitaxial growth of silicon nanowires using an aluminium catalyst, Nature Nanotechnology, vol.10, issue.3, 2008.
DOI : 10.1038/nnano.2006.133

T. Watanabe, Structural effects on grain boundary segragation, hardening and fracture, Journal de Physique, issue.13, pp.4555-566, 1985.
DOI : 10.1051/jphyscol:1985462
URL : https://hal.archives-ouvertes.fr/jpa-00224714/document

R. Wentorf and J. Kasper, Two New Forms of Silicon, Science, vol.139, issue.3552, p.338, 1963.
DOI : 10.1126/science.139.3552.338-a

P. Werner, N. Zakharov, G. Gerth, L. Schubert, G. ¨-osele et al., On the formation of Si nanowires by molecular beam epitaxy, International Journal of Materials Research, vol.97, issue.7, p.1008, 2006.
DOI : 10.3139/146.101332

B. Widom, Line Tension and the Shape of a Sessile Drop, The Journal of Physical Chemistry, vol.99, issue.9, p.2803, 1995.
DOI : 10.1021/j100009a041

C. Wiethoff, F. Ross, M. Copel, M. H. Von-hoegen, and F. M. Zu-heringdorf, Au Stabilization and Coverage of Sawtooth Facets on Si Nanowires Grown by Vapor???Liquid???Solid Epitaxy, Nano Letters, vol.8, issue.9, pp.3065-3068, 2008.
DOI : 10.1021/nl801146q

J. Wilcoxon, J. Martin, F. Parsapour, B. Wiedenman, K. et al., Photoluminescence from nanosize gold clusters, The Journal of Chemical Physics, vol.108, issue.21, p.9137, 1998.
DOI : 10.1063/1.476360

D. Williams and C. Carter, Transmission Electron Microscopy, 1996.
DOI : 10.1007/978-1-4757-2519-3

Y. Wong, M. Yahaya, M. M. Salleh, and B. Y. Majlis, Controlled growth of silicon nanowires synthesized via solid???liquid???solid mechanism, Science and Technology of Advanced Materials, vol.14, issue.3-4, p.330, 2005.
DOI : 10.1021/ja0059084

Y. Wu, Y. Cui, L. Huynh, C. Barrelet, D. Bell et al., Controlled Growth and Structures of Molecular-Scale Silicon Nanowires, Nano Letters, vol.4, issue.3, p.433, 2004.
DOI : 10.1021/nl035162i

J. Xiang, Ge/Si nanowire heterostructures as high-performance field-effect transistors, Nature, vol.80, issue.7092, p.489, 2006.
DOI : 10.1038/nature04796

K. Yamamotoa, T. Tanji, and M. Hibino, Hologram simulation for off-axis electron holography, Ultramicroscopy, vol.85, issue.1, pp.35-49, 2000.
DOI : 10.1016/S0304-3991(00)00042-5

J. Yamasaki, E. Okunishi, H. Sawada, and N. Tanaka, Direct Observation of Site Hopping of Individual Dopant Atoms in Si Crystal, by Cs-corrected STEM, Microscopy and Microanalysis, vol.13, issue.S02, p.1186, 2007.
DOI : 10.1017/S1431927607078324

C. Yang, Z. Zhong, and C. Lieber, Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon Nanowires, Science, vol.310, issue.5752, p.3101304, 2005.
DOI : 10.1126/science.1118798

J. Yao, Z. Liu, Y. Liu, Y. Wang, C. Sun et al., Optical Negative Refraction in Bulk Metamaterials of Nanowires, Science, vol.321, issue.5891, p.321930, 2008.
DOI : 10.1126/science.1157566

R. Zelsacher, A. Wood, E. Bacher, E. Prax, K. Sorschag et al., A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET, Microelectronics Reliability, vol.47, issue.9-11, pp.9-111585, 2007.
DOI : 10.1016/j.microrel.2007.07.001

X. Zhang, Electrochemistry of silicon and its oxide, 2001.

Y. Zhang, Z. Iqbal, S. Vijayalakshmi, and H. Grebel, Stable hexagonal-wurtzite silicon phase by laser ablation, Applied Physics Letters, vol.75, issue.18, p.2758, 1999.
DOI : 10.1063/1.125140

Y. Zhang, Z. Iqbal, S. Vijayalakshmi, and H. Grebelb, Stable hexagonal-wurtzite silicon phase by laser ablation, Applied Physics Letters, vol.75, issue.18, p.752758, 1999.
DOI : 10.1063/1.125140

Y. Zhang, Z. Iqbal, S. Vijayalakshmi, S. Qadri, and H. Grebel, Formation of hexagonalwurtzite germanium by pulsed laser ablation, Solid Sate Communications, p.657, 2000.

G. Zhou and Z. Zhang, Transmission electron microscopy study of Si nanowires, Applied Physics Letters, vol.73, issue.5, p.677, 1998.
DOI : 10.1063/1.121945

G. Zhou, Z. Zhang, Y. , and D. , Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation, Journal of Crystal Growth, vol.197, issue.1-2, pp.129-215, 1999.
DOI : 10.1016/S0022-0248(98)00929-4

J. Zuo, Measurements of electron densities in solids: a real-space view of electronic structure and bonding in inorganic crystals, Reports on Progress in Physics, vol.67, issue.11, p.2053, 2004.
DOI : 10.1088/0034-4885/67/11/R03

I. Cea-grenoble, U. Joseph-fourier, F. Advisor, . J. Dr, and . Rouvì-ere, Thesis: Caractérisation de nanofils de silicium par microscopié electronique en transmission. Funded by the European Community under the Sixth Framework Programme for the Marie Curie Host Fellowships for Early Stage Research Training (EST) CHEMTRONICS " Contract Number MEST-CT-2005-020513 Advisor: Prof. Dr. A. Polman Thesis: Pulsed CO 2 laser printing and smoothing of Si quantum dot solids Advisor: Prof. Dr. P. van der Straten Thesis: Measuring the temperature of a Rb MOT using an oscillating magnetic field . 2003 ? Bachelor of Science Chemistry (with honours), Department of Chemistry, University of Utrecht, the Netherlands Advisors: Prof. Dr. A. Meijerink and Dr ? Employee of Utrecht Chemistry shop: an organisation to advise consumers and non-profit organisations on chemistry related topics Professional Activities Participation in Research Projects 2008-2009 ? Informal collaboration with IBM Zurich focused on dopant characterization in silicon nanowires, a personal initiative ? Chemtronics, transversal programme coupling fundamental and applied sciences around nanoobjects and give the participating international PhD students a broad training involving industry and valorization of scientific findings. Funded by the European Community under the Sixth Framework Programme for the Marie Curie Host Fellowships for Early Stage Research Training (EST) CHEMTRONICS " Contract Number MEST-CT, Curriculum Vitae ? Martien den Hertog Academic Background 2009 ? Doctorate Physics ? Chimtronique, broad transversal programme coupling fundamental and applied sciences around nano-objects, funded by the Funded by the European Community Marie Curie, French national research agency (ANR) and CARNOT projects funded by French national research agency ? Propriétés Electroniques d'Assemblages AutoorganisésAutoorganisés`Autoorganisésà base de Nanofils (PREEANs), funded by the French national research agency (ANR), 2003.

@. References, . Dr, I. Jean-lucrouvì-ere-cea-grenoble, and L. , Email: jean-luc.rouviere@cea.fr ? Prof. Dr. Albert Polman, scientific group leader and director of the FOM-Institute for Atomic and Molecular Physics (AMOLF), Amsterdam, The Netherlands. He is associated with the University of Utrecht as a professor of nanophotonics and is part-time visiting associate in the Faculty of Applied Physics at the California Institute of, Pasadena. Email: A.Polman@amolf.nl Professional Activities

@. Prof and . Dr, Peter van der Straten, researcher in the Atom Optics group, Debye Institute, University of Utrecht, the Netherlands. Email: p.vanderstraten@phys.uu.nl Miscellaneous Language Skills ? Dutch (native) ? French (proficient) ? English (proficient) ? Spanish (moderate) ? German (basic)

S. Skills, @. Origin, @. Femlab, @. Gnuplot, @. Matlab et al., Tonyplot (Silvaco simulation software) ? MS Office, Latex Invited Seminars Structural and electronic properties of silicon nanowires, ? Laboratoire Nanophysique et Semiconducteurs (NPSC), 2008.

U. K. Oxford, . @bullet, . Jmc, F. Toulouse, J. L. Gdr et al., Electron Holography of silicon nanowires, oral presen- tation. 2007 ? Société Frana¸iseFrana¸ise des Microscopies Colloque Structural properties of Gold Catalyzed Silicon Nanowires: Defects in the wires and Gold on the Wires, oral presentation Defects in the wires and Gold on the Wires, oral presentation Gold Catalyzed Silicon Nanowires: Defects in the wires and Gold on the Wires 2006 ? Trends iN Nanotechnology Evidence of gold on lateral surfaces of gold catalyzed silicon nanowires, poster presentation that received an award Poster presentations. Extra curricular activities 2001-2006 ? Climbing instructor for the Utrecht Student Alpine Association ? Member of the Chemistry faculty board ? Head of the committee of (climbing) education of the Utrecht Student Alpine Association. Design and implementation of a new education system allowing education of more people with the same amount of resources (instructors and time) 2002-2003 ? Member of the board of the Utrecht Student Alpine Association. Achievements: sorting out the finances of the Club and generating an effective and steady growth of members of 40 %. 2001 ? Climbing instructor education Mapping active dopants in single silicon nanowires using off-axis electron holography, accepted for publication in Nanoletters Off axis holography of doped and intrinsic silicon nanowires: Interpretation and influence of fields in the vacuum, Conferences 2009 ? Microscopy of Semiconduction Materials Dopant mapping in silicon nanowires using Off-axis Electron Holography ? European Microscopy Conference ? GDR nanofils ? Intensive Spanish language courses in Salamanca. Publications As a first author 2009 ? M. den Hertog Control of Gold Surface Diffusion on Si Nanowires, Nanoletters 8 ? M.I. den Hertog, J.L. Rouviere, F. Dhalluin, P. Gentile, P. Ferret, C. Ternon and T. Baron. Gold Catalyzed Silicon Nanowires: Defects in the wires and Gold on the Wires, Proceeding MSM, p.1544, 1999.

@. C. Cayron, M. D. Hertog, L. Latu-romain, C. Mouchet, C. Secouard et al., Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins, Journal of Applied Crystallography, vol.42, issue.2, pp.242-252, 2009.
DOI : 10.1107/S0021889808042131
URL : https://hal.archives-ouvertes.fr/hal-00394399

B. Salem, F. Dhalluin, T. Baron, H. Jamgotchian, F. Bedu et al., Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires, Materials Science and Engineering B 159-60 The growth of small diameter silicon nanowires to nanotrees A new architecture for self-organized silicon nanowire growth integrated on a (100) silicon substrate, Physica Status Solidi A 205 Critical condition for growth of silicon nanowires, Nanotechnology Journal of Applied Physics, vol.19, issue.102, pp.83-125608, 2005.

@. M. Den-hertog, C. Cayron, J. L. Rouviere, F. Oehler, P. Gentile et al., Characterization of misleading twin defects in silicon nanowires, 2009.