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Mesures de contraintes par spectroscopie et imagerie Raman dans des dispositifs micro-électroniques

Abstract : Stress measurements by Raman spectroscopy have been performed on microelectronic devices. Strain-induced effects on the Raman spectrum of silicon have been studied in order to set up the experimental work. Selection rules and instrumental parameters have been considered for backscattering experiments. Prior to the study of different microelectronic devices, the comparison of several Raman imaging techniques has been made. Shallow UV excitative wavelength has been found to be of extrem interest for spatial resolution improvement. A method based on simulations along with Raman experiments has been developed in order to measure stress in silicon. Accurate stress measurements have been performed using this method, including 3D Raman measurements on deep trench insulator. Silicon germanium alloys have also been studied by Raman spectroscopy, within the application field of the previous method.
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Contributor : Eddy Romain-Latu <>
Submitted on : Monday, May 3, 2010 - 11:16:26 AM
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  • HAL Id : tel-00479985, version 1



Eddy Romain-Latu. Mesures de contraintes par spectroscopie et imagerie Raman dans des dispositifs micro-électroniques. Physique Atomique [physics.atom-ph]. Institut National Polytechnique de Grenoble - INPG, 2006. Français. ⟨tel-00479985⟩



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