Quantum confinement and interface effects on photoluminescence from silicon single quantum wells, Solid State Communications, vol.103, issue.10, p.573, 1997. ,
DOI : 10.1016/S0038-1098(97)00227-5
Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime, Physical Review B, vol.62, issue.24, p.16820, 2000. ,
DOI : 10.1103/PhysRevB.62.16820
Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors, Physical Review Letters, vol.70, issue.3, p.323, 1993. ,
DOI : 10.1103/PhysRevLett.70.323
Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix, Applied Physics Letters, vol.75, issue.13, p.1857, 1999. ,
DOI : 10.1063/1.124851
Atomic and electronic structures of an interface between silicon and ??-cristobalite, Physical Review B, vol.41, issue.18, p.12637, 1990. ,
DOI : 10.1103/PhysRevB.41.12637
Microscopic mechanism for SiO2/Si interface passivation: Si=O double bond formation, Surface Science, vol.380, issue.1, p.61, 1997. ,
DOI : 10.1016/S0039-6028(96)01568-3
Interface from First Principles, Physical Review Letters, vol.85, issue.6, p.1298, 2000. ,
DOI : 10.1103/PhysRevLett.85.1298
URL : https://hal.archives-ouvertes.fr/hal-00640153
Interface, Physical Review Letters, vol.84, issue.19, p.4393, 2000. ,
DOI : 10.1103/PhysRevLett.84.4393
URL : https://hal.archives-ouvertes.fr/tel-01134315
Theoretical aspects of the luminescence of porous silicon, Physical Review B, vol.48, issue.15, p.11024, 1993. ,
DOI : 10.1103/PhysRevB.48.11024
Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen, Physical Review Letters, vol.82, issue.1, p.197, 1999. ,
DOI : 10.1103/PhysRevLett.82.197
The electronic and optical properties of silicon nanoclusters: absorption and emission, Optical Materials, vol.27, issue.5, p.1008, 2005. ,
DOI : 10.1016/j.optmat.2004.08.054
Rare Earth point defects in GaN, Thèse doctorat, 2007. ,
Encyclopedia of Laser Physics and Technology : Erbium-doped Fiber Amplifiers ,
Er3+???ions???Si nanocrystals interactions and their effects on the luminescence properties, Applied Physics Letters, vol.76, issue.16, p.2167, 2000. ,
DOI : 10.1063/1.126286
Excited-state relaxations and Franck-Condon shift in Si quantum dots, Physical Review B, vol.68, issue.3, p.33313, 2003. ,
DOI : 10.1103/PhysRevB.68.033313
Inverse-photoemission study of Ge(100), Si(100), and GaAs(100): Bulk bands and surface states, Physical Review B, vol.47, issue.4, p.2130, 1993. ,
DOI : 10.1103/PhysRevB.47.2130
Handbook of Chemistry and Physics, 2003. ,
Band structures of all polycrystalline forms of silicon dioxide, Physical Review B, vol.31, issue.4, p.2172, 1985. ,
DOI : 10.1103/PhysRevB.31.2172
Porous silicon formation: A quantum wire effect, Applied Physics Letters, vol.58, issue.8, p.856, 1990. ,
DOI : 10.1063/1.104512
Si emission from the SiO2???Si interface during the growth of SiO2 in the HfO2???SiO2???Si structure, Applied Physics Letters, vol.88, issue.15, p.153516, 2006. ,
DOI : 10.1063/1.2195101
Strong exciton-erbium coupling in Si nanocrystal-doped SiO2, Applied Physics Letters, vol.76, issue.17, p.2325, 2000. ,
DOI : 10.1063/1.126334
Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals, Journal of Applied Physics, vol.89, issue.1, p.264, 2001. ,
DOI : 10.1063/1.1331074
Exciton???erbium coupling and the excitation dynamics of Er3+ in erbium-doped silicon-rich silicon oxide, Applied Physics Letters, vol.78, issue.18, p.2709, 2001. ,
DOI : 10.1063/1.1369150
Optical gain at 1.54 ??m in erbium-doped silicon nanocluster sensitized waveguide, Applied Physics Letters, vol.79, issue.27, p.4568, 2001. ,
DOI : 10.1063/1.1419035
Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals, Journal of Luminescence, vol.121, issue.2, p.222, 2006. ,
DOI : 10.1016/j.jlumin.2006.07.024
Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-??m emission, Journal of Applied Physics, vol.95, issue.7, p.3717, 2004. ,
DOI : 10.1063/1.1655680
Coexistence of two different energy transfer processes in SiO2 films containing Si nanocrystals and Er, Journal of Applied Physics, vol.95, issue.1, p.272, 2004. ,
DOI : 10.1063/1.1631072
Theory of energy transfer between Er3+ ions and carriers confined in Si nanocrystals in SiO2 matrix, Materials Science and Engineering: B, vol.146, issue.1-3, p.121, 2007. ,
DOI : 10.1016/j.mseb.2007.07.066
luminescence of Er in crystalline Si, Physical Review B, vol.49, issue.23, p.16313, 1994. ,
DOI : 10.1103/PhysRevB.49.16313
Quantum wells, wires and dots ,
Fundamentals of Semiconductors, 1998. ,
Détection photothermique et spectroscopie d'absorption de nanoobjets individuels : nanoparticules métalliques, nanocristaux semiconducteurs, et nanotubes de carbone, Thèse doctorat, 2006. ,
The structural and luminescence properties of porous silicon, Journal of Applied Physics, vol.82, issue.3, p.909, 1997. ,
DOI : 10.1063/1.366536
Quantum confinement and light emission in SiO2/Si superlattices, Nature, vol.364, issue.6554, p.258, 1995. ,
DOI : 10.1038/378258a0
Correlation between luminescence and structural properties of Si nanocrystals, Journal of Applied Physics, vol.87, issue.3, p.1295, 2000. ,
DOI : 10.1063/1.372013
Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing, Thin Solid Films, vol.276, issue.1-2, p.104, 1996. ,
DOI : 10.1016/0040-6090(95)08113-5
Low-loss rib waveguides containing Si nanocrystals embedded in SiO2, Journal of Applied Physics, vol.97, issue.7, p.74312, 2005. ,
DOI : 10.1063/1.1876574
Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.254, issue.1, p.87, 2007. ,
DOI : 10.1016/j.nimb.2006.10.081
An original approach for the fabrication of Si/SiO2 multilayers using reactive magnetron sputtering, Thin Solid Films, vol.419, issue.1-2, p.5, 2002. ,
DOI : 10.1016/S0040-6090(02)00294-8
Spectroscopic ellipsometry analyses of sputtered Si/SiO2 nanostructures, Journal of Applied Physics, vol.85, issue.8, pp.4032-4039, 1999. ,
DOI : 10.1063/1.370307
Raman, photoluminescence and optical absorption studies on nanocrystalline silicon, Materials Science and Engineering: B, vol.95, issue.3, p.202, 2002. ,
DOI : 10.1016/S0921-5107(02)00234-9
Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2, Journal of Applied Physics, vol.91, issue.2, p.798, 2002. ,
DOI : 10.1063/1.1423768
interface, Physical Review B, vol.53, issue.16, p.10942, 1996. ,
DOI : 10.1103/PhysRevB.53.10942
Excitonic and Quasiparticle Gaps in Si Nanocrystals, Physical Review Letters, vol.84, issue.11, p.2457, 2000. ,
DOI : 10.1103/PhysRevLett.84.2457
URL : https://hal.archives-ouvertes.fr/hal-00158952
Multiple Si=O bonds at the silicon cluster surface, Journal of Applied Physics, vol.94, issue.3, p.2130, 2003. ,
DOI : 10.1063/1.1586954
Effects of local fields in time-dependent density functional theory shown in oxidized silicon clusters, Physical Review B, vol.72, issue.4, p.45442, 2005. ,
DOI : 10.1103/PhysRevB.72.045442
Excitons in silicon nanocrystallites: The nature of luminescence, Physical Review B, vol.75, issue.3, p.33303, 2007. ,
DOI : 10.1103/PhysRevB.75.033303
Atomistic simulation of the interface structure of Si nanocrystals embedded in amorphous silica, Physical Review B, vol.77, issue.11, p.115325, 2008. ,
DOI : 10.1103/PhysRevB.77.115325
Shell-like structure of valence band orbitals of silicon nanocrystals in silica glass, physica status solidi (b), vol.68, issue.6, p.47, 2006. ,
DOI : 10.1002/pssb.200642104
transformation: Interfacial structure and mechanism, Physical Review Letters, vol.59, issue.2, p.213, 1987. ,
DOI : 10.1103/PhysRevLett.59.213
Stabilized electronic state and its luminescence at the surface of oxygen-passivated porous silicon, Physical Review B, vol.62, issue.12, p.7759, 2000. ,
DOI : 10.1103/PhysRevB.62.R7759
Local environment of erbium atoms in amorphous hydrogenated silicon, Applied Physics Letters, vol.72, issue.6, p.728, 1998. ,
DOI : 10.1063/1.120866
The effects of oxygen and defects on the deep???level properties of Er in crystalline Si, Journal of Applied Physics, vol.78, issue.6, p.3867, 1995. ,
DOI : 10.1063/1.359903
Role of codopant oxygen in erbium-doped silicon, Physical Review B, vol.58, issue.16, p.10415, 1998. ,
DOI : 10.1103/PhysRevB.58.10415
in crystalline Si, Physical Review B, vol.57, issue.8, p.4443, 1998. ,
DOI : 10.1103/PhysRevB.57.4443
Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO[sub 2], Journal of Applied Physics, vol.91, issue.1, p.534, 2002. ,
DOI : 10.1063/1.1418417
A Theory of Sensitized Luminescence in Solids, The Journal of Chemical Physics, vol.21, issue.5, p.836, 1953. ,
DOI : 10.1063/1.1699044
Effects of Si nanocluster size and carrier???Er interaction distance on the efficiency of energy transfer, Journal of Luminescence, vol.126, issue.2, p.581, 2007. ,
DOI : 10.1016/j.jlumin.2006.10.008
Electronic structure : Basic theory and practical methods, 2004. ,
DOI : 10.1017/CBO9780511805769
Inhomogeneous Electron Gas, Physical Review, vol.136, issue.3B, p.864, 1964. ,
DOI : 10.1103/PhysRev.136.B864
Self-Consistent Equations Including Exchange and Correlation Effects, Physical Review, vol.140, issue.4A, p.1133, 1965. ,
DOI : 10.1103/PhysRev.140.A1133
Ground State of the Electron Gas by a Stochastic Method, Physical Review Letters, vol.45, issue.7, p.566, 1980. ,
DOI : 10.1103/PhysRevLett.45.566
Density Functional Theory I Functionals and Effective Potentials, Topics in Current Chemistry, 1996. ,
Generalized gradient approximation for the exchange-correlation hole of a many-electron system, Physical Review B, vol.54, issue.23, p.16533, 1996. ,
DOI : 10.1103/PhysRevB.54.16533
A new mixing of Hartree???Fock and local density???functional theories, The Journal of Chemical Physics, vol.98, issue.2, p.1372, 1993. ,
DOI : 10.1063/1.464304
Ab Initio Calculation of Vibrational Absorption and Circular Dichroism Spectra Using Density Functional Force Fields, The Journal of Physical Chemistry, vol.98, issue.45, p.11623, 1994. ,
DOI : 10.1021/j100096a001
Density-functional exchange-energy approximation with correct asymptotic behavior, Physical Review A, vol.38, issue.6, p.3098, 1988. ,
DOI : 10.1103/PhysRevA.38.3098
Development of the Colle-Salvetti correlation-energy formula into a functional of the electron density, Physical Review B, vol.37, issue.2, p.785, 1988. ,
DOI : 10.1103/PhysRevB.37.785
Density???functional thermochemistry. III. The role of exact exchange, The Journal of Chemical Physics, vol.98, issue.7, p.5648, 1993. ,
DOI : 10.1063/1.464913
Semiconductors and semimetals : Identification of defects in semiconductors. Academic, 1997. ,
Chapter 6 The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors, 1998. ,
DOI : 10.1016/S0080-8784(08)63058-6
Pseudopotentials in the theory of metals, 1966. ,
Relativistic separable dual-space Gaussian pseudopotentials from H to Rn, Physical Review B, vol.58, issue.7, p.3641, 1998. ,
DOI : 10.1103/PhysRevB.58.3641
Accurate and simple analytic representation of the electron-gas correlation energy, Physical Review B, vol.45, issue.23, p.13244, 1992. ,
DOI : 10.1103/PhysRevB.45.13244
Nonlinear ionic pseudopotentials in spin-density-functional calculations, Physical Review B, vol.26, issue.4, p.1738, 1982. ,
DOI : 10.1103/PhysRevB.26.1738
Handbook of Chemistry and Physics, 1992. ,
Atomic and electronic structures of a Boron impurity and its diffusion pathways in crystalline Si, Physical Review B, vol.64, issue.23, p.235204, 2001. ,
DOI : 10.1103/PhysRevB.64.235204
Dislocations in diamond: Electron energy-loss spectroscopy, Physical Review B, vol.65, issue.20, p.205206, 2002. ,
DOI : 10.1103/PhysRevB.65.205206
Special points for Brillouin-zone integrations, Physical Review B, vol.13, issue.12, p.5188, 1976. ,
DOI : 10.1103/PhysRevB.13.5188
Polymorphism in silica studied in the local density and generalized-gradient approximations, Journal of Physics: Condensed Matter, vol.11, issue.19, p.3833, 1999. ,
DOI : 10.1088/0953-8984/11/19/306
at elevated pressure, Zeitschrift f??r Kristallographie, vol.198, issue.3-4, p.177, 1992. ,
DOI : 10.1524/zkri.1992.198.3-4.177
High-pressure crystal chemistry and amorphization of ??-quartz, Solid State Communications, vol.72, issue.5, p.507, 1989. ,
DOI : 10.1016/0038-1098(89)90607-8
On the prediction of band gaps from hybrid functional theory, Chemical Physics Letters, vol.342, issue.3-4, p.397, 2001. ,
DOI : 10.1016/S0009-2614(01)00616-9
Crystal field effects on the topological properties of the electron density in molecular crystals: The case of urea, The Journal of Chemical Physics, vol.101, issue.12, p.10686, 1994. ,
DOI : 10.1063/1.467882
Elaboration etétudeetétude de multicouches Si-SiO2 pour des applications en optoélectronique, caractérisation et modélisation, Thèse doctorat, 2006. ,
Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity, Applied Physics Letters, vol.71, issue.14, p.1954, 1997. ,
DOI : 10.1063/1.119753
Optical absorption cross sections of Si nanocrystals, Physical Review B, vol.61, issue.7, p.4485, 2000. ,
DOI : 10.1103/PhysRevB.61.4485
Optical losses and absorption cross-section of silicon nanocrystals, Journal of Luminescence, vol.121, issue.2, p.344, 2006. ,
DOI : 10.1016/j.jlumin.2006.08.083
Computational Studies of the Optical Emission of Silicon Nanocrystals, Journal of the American Chemical Society, vol.125, issue.9, p.2786, 2003. ,
DOI : 10.1021/ja0293296
Matrix isolation infrared and density functional theoretical studies of organic silanones, (CH3O)2Si???O and (C6H5)2Si???O, Journal of Organometallic Chemistry, vol.566, issue.1-2, p.45, 1998. ,
DOI : 10.1016/S0022-328X(98)00726-8
Point and extended defects in group IV semiconductors, Thèse doctorat, 2004. ,
Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides, Applied Physics Letters, vol.86, issue.26, p.261103, 2005. ,
DOI : 10.1063/1.1957112