Applications de techniques avancées de contrôle des procédés en industrie du semi-conducteur.

Abstract : With pattern dimensions decreasing in CMOS technology, the variability in device parametric characteristics such as transistor drive currents is increased, resulting in device yield degradation. To address this variability, we focused on the development of advanced process control tools. A statistical analysis of the parametric variations in both saturation and subthreshold regimes has been carried out in order to identify the main process contributors: the large gate line-width CD variation. The lot-to-lot component of this variation is significant so we considered a novel strategy: cooperative control. Recursive identification algorithms have been simulated and compared. A full-automated run-to-run feed-forward control scheme from Gate Etching to Pocket Implantation has been considered. The measured deviation of the post-etch gate line-width is automatically compensated by adjusting the pocket dose. The implementation of the loop in production allowed a 40% variability reduction.
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Submitted on : Thursday, March 11, 2010 - 4:16:32 PM
Last modification on : Thursday, October 17, 2019 - 12:36:32 PM
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  • HAL Id : tel-00463241, version 1

Citation

Nader Jedidi. Applications de techniques avancées de contrôle des procédés en industrie du semi-conducteur.. Micro et nanotechnologies/Microélectronique. Ecole Nationale Supérieure des Mines de Saint-Etienne, 2009. Français. ⟨tel-00463241⟩

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