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Etude par microspectrométrie Raman de matériaux et de composants microélectroniques à base de semi-conducteurs III-V grand gap

Abstract : GaN based semi-conductors present numerous advantages linked essentially to their large band gap as compared to traditional Si systems. In addition, it is possible to form hetero-junction III-V HEMTs (High electron Mobility Transistor) like AlGaN/GaN which makes it possible to obtain both a large density of carriers confined at the heterojunction and a high electronic mobility. At the moment these systems are the most promising for high-power hyperfrequency applications. However heating occurs during operation which results in abnormal impacts on the performance of the microelectronic components. Micro-Raman characterization of these components makes it possible to understand the influence of the behaviour of the semi-conductor materials on the performance of the HEMTs in hyperfrequency mode. Micro-Raman spectroscopy being non-destructive and possessing a submicronic spatial resolution is well adapted to such studies. The use of various UV and visible excitation wavelengths (266 and 632.8 nm) makes it possible to probe the heterostructures at different penetration depths. We present results of micro Raman studies for analysis of the heterostructure composition, the stresses between layers, the thermal boundary resistance, the crystalline quality of each layer and the doping and thermal behaviour of each layer. In addition, recent time-resolved UV micro-Raman studies have made it possible to analyse the transient thermal behaviour of AlGaN/GaN HEMTs under voltage and in the active area of the component.
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Submitted on : Friday, February 26, 2010 - 11:47:59 AM
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Ophélie Lancry. Etude par microspectrométrie Raman de matériaux et de composants microélectroniques à base de semi-conducteurs III-V grand gap. domain_other. Université des Sciences et Technologie de Lille - Lille I, 2009. Français. ⟨tel-00460102⟩

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