Vers la réalisation de composants haute tension, forte puissance sur diamant CVD. Développement des technologies associées.

Abstract : The evolution of power electronic devices is getting more and more limited by the silicon intrinsic properties. This limitation could be overcome by using wide bandgap semiconductors. Among these materials, diamond properties are the more fitted for power electronics: the highest critical electric field and thermal conductivity amongst the solids, high carriers mobility, high temperature operation possibility. At this time, diamond samples grown by chemical vapour deposition methods exhibit crystallographic properties that are suitable for a use in power electronics. Though, the realization of diamond power devices remains difficult due to its hardness and chemical inertness, among others. First, this work aims at determining the profit that could represent diamond for power electronics. Second, different technologic steps that are necessary to the realisation of electronic devices are studied: ohmic contacts deposition, doping and ion etching. Finally, the first devices we realised, Schottky diodes, are presented. Their characterisation allows us establishing new objectives for the future developments of our studies.
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Networking and Internet Architecture. Institut National Polytechnique de Toulouse - INPT, 2009. French


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Submitted on : Thursday, February 25, 2010 - 1:39:41 PM
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De Fabian Gabriel Civrac. Vers la réalisation de composants haute tension, forte puissance sur diamant CVD. Développement des technologies associées.. Networking and Internet Architecture. Institut National Polytechnique de Toulouse - INPT, 2009. French. <tel-00459854>

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