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Theses

Étude par Epitaxie en Phase Vapeur aux OrganoMétalliques de la croissance sélective de Nano-Hétéro-Structures de matériaux à base de GaN.

Abstract : GaN based wide bandgap semiconductor materials nanostructures have a tremendous potential for the synthesis of innovative optoelectronical devices emitting in the UV region (190-340nm). Thus, the feasibility of the nanoscale growth must be demonstrated. Selective Area Growth (SAG) extended to the nanoscale (NSAG for NanoSAG) is a excellent choice for growing nanostructures. This technique is based on localized growth of the material on substrates partially covered by dielectric masks. NSAG technique allows the elaboration of highly mismatched materials thanks to singular stress relief mechanisms available at nanoscale which decrease the density of dislocation. The first part of the work consists in the implementation of the GaN selective epitaxy on GaN template substrate at the micrometer and nanometer scales by metal organic vapor phase epitaxy. In a second time, the NSAG technique is used for the growth of GaN nanostructures on SiC-6H substrate and AlN template substrate. Nanostructures present a good surface morphology with smooth crystallographic surface side walls and a good dimensional homogeneity. The influence of the growth conditions and the geometric pattern defined in the dielectric mask on the nanostructures growth is evidenced. Finally transmission electronic microscopy and X-rays nano-diffraction by synchrotron radiation are used for the deep structural study of the nanostructures.
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Submitted on : Wednesday, February 17, 2010 - 10:24:48 AM
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  • HAL Id : tel-00457306, version 1

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Jérôme Martin. Étude par Epitaxie en Phase Vapeur aux OrganoMétalliques de la croissance sélective de Nano-Hétéro-Structures de matériaux à base de GaN.. Matière Condensée [cond-mat]. Université de Metz, 2009. Français. ⟨tel-00457306⟩

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