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Procédés plasmas pour l'optimisation des matériaux intervenant dans le management thermique et la passivation de composants de puissance hyperfréquences à base de GaN et AlGaN

Abstract : This work is dedicated to the development and the optimization of a low temperature (<300°C) thin film deposition process. The targeted material is a nitride dielectric (AlN, BN) with a high thermal conductivity dedicated to the passivation of high power high frequency HEMT GaN devices. Nowadays, the GaN HEMT (High Electron Mobility Transistor) performances are directly limited by their thermal resistance. The integration of a dielectric material with a high thermal conductivity is expected to improve the thermal behavior of the device and to increase their performances. The magnetron sputtering has been chosen for its compatibility with microelectronic processes. This study addressed first an in depth study of magnetron sputtering deposition process for thin films (AlN and BN) and second a extended study of the physico chemical properties of the obtained thin films using XRD, FTIR, Raman spectroscopy, SAED and HRTEM. The magnetron sputtering process was study by Langmuir probe measurement and Optical Emission Spectroscopy. In the case of AlN films, we highlighted the first order effect of the magnetic field configuration on the film properties. Such a process control allowed obtaining an epitaxial growth of AlN films on AlGaN substrate at temperature below 250°C. The thermal properties of the thin films were investigated using an original electro-thermal measurement method well adapted to thin films. Such studies allowed underlining the relationship between thermal conductivity and thin film microstructure and to reach a further optimization of the thermal properties of AlN thin films up to 170 W.K-1.m-1.
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https://tel.archives-ouvertes.fr/tel-00457286
Contributor : Cyril Duquenne <>
Submitted on : Wednesday, February 17, 2010 - 9:42:45 AM
Last modification on : Wednesday, July 11, 2018 - 6:06:04 PM
Long-term archiving on: : Friday, June 18, 2010 - 9:09:47 PM

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Cyril Duquenne. Procédés plasmas pour l'optimisation des matériaux intervenant dans le management thermique et la passivation de composants de puissance hyperfréquences à base de GaN et AlGaN. Micro et nanotechnologies/Microélectronique. Université de Nantes, 2008. Français. ⟨tel-00457286⟩

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