I. Chapitre, différente selon la direction [001] et les directions {111} (voir figure IV.45) On passe ainsi d'un mode de croissance 2D (figure IV.33c) ` a un mode de croissance colonnaire (figure IV.33d) Nous observons aussi que les inclusions ont tendancè a se refermer avec l'´ epaisseur

2. La-forte-croissance and . Dans-le-plan, 27 (figure IV.23) permet d'expliquer ce phénomène. Par ailleurs, l'observation de la surface du cristal de la figure IV.33 révèle que la face (001) au sommet des colonnes est majoritairement rectangulaire (figure IV.34a) Lors de croissances colonnaires dans Si, le sommet des colonnes est majoritairement carré (figure IV.34b) Les quatre plans bordant la face (001) sont les quatre plans de la famille {111} Chaque face (111) de même polarité, silicium ou carbone est située de part et d'autre de la colonne. Afin d'identifier la polarité de chaque face (111), il est nécessaire de procéderprocéderà une attaque dans l'hydroxyde de potassium fondue (icì a 530°C) En raison desénergiesdesénergies de surface différentes entre les deux polarités, l'attaque sera sélective uniquement sur la polarité silicium. En d'autres termes, la révélation de défauts n'est possible que sur la face Si avec KOH. La vitesse d'attaque de la face C est supérieure mais n'est pas sélective, elle reste lisse (mais devient légèrement ondulée), Ainsi, après attaque dans KOH fondu, la face présentant des figures d'attaque sera la face silicium. La nature et la densité des défauts révélés seront détaillées dans le chapitre 5. La figure IV.35 montre la surface brute du cristal après 3 minutes dans KOHàKOHà 530°C

S. Les-croissances-spontanées-dans and S. , Al montrent que la stabilisation du polytype cubique est possible dans un solvant Si 0,60 Al 0,40à40à 1650°C avec des vitesses de croissance trèstrèsélevées (1,6 mm/h dans le plan (111) et 0,15 mm/h dans la direction [111]). L'anisotropie de croissance n'est pas aussi marquée que dans le cas de croissance spontanée dans Si 0,73 Ti 0, Cependant, nous observons un facettage de la couche et de nombreuses inclusions de solvants pour des croissances sur 3C- SiC(001). Ces inclusions apparaissent d` es 15 at% en aluminium

V. Figure, 31 ? Imagerie TEM haute résolution des premiers instants de croissance dans la couche VLS. Présence de nombreuses fautes d'empilement (notées SF) dans le plan

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