Cristallogenèse de carbure de silicium cubique en solution à haute température

Abstract : Despite outstanding properties, the development of 3C-SiC electronics is still suffering from the lack of bulk 3C-SiC substrates. Up to now, there is no real seed and/or optimized growth processes for this material. We address in this work the bulk growth of 3C-SiC by a solution growth method. The first part addresses the coupled heat transfer and fluid dynamic modeling of the SiC solution growth process, by paying special attention to the different convective flows in the liquid. It is demonstrated that both Marangoni and electromagnetic convections have to be avoided. We propose a configuration where the flow patterns in front of the crystal are driven only by the crystal rotation. For the first time, we have obtained relatively large crystals that can be considered for realization of electronic devices. The coupling between simulations and experiments shows that the three most important parameters for the solution growth of 3C-SiC are: control of convection, control of temperature and choice of the correct seed orientation. We also demonstrate the in-situ doping. N-type and p-type doping as high as 1020 at.cm-3 can be easily achieved. Structural quality of crystal is also evaluated. Characterisations based on Raman spectroscopy, TEM observations and birefringence microscopy reveal high structural quality. Stacking fault density in spontaneous crystals is below 100 cm-1.
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Material chemistry. Institut National Polytechnique de Grenoble - INPG, 2009. French


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Contributor : Frédéric Mercier <>
Submitted on : Monday, January 4, 2010 - 8:52:43 PM
Last modification on : Monday, January 4, 2010 - 8:56:34 PM

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Frédéric Mercier. Cristallogenèse de carbure de silicium cubique en solution à haute température. Material chemistry. Institut National Polytechnique de Grenoble - INPG, 2009. French. <tel-00443882>

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