Conductance profiles of 35-aGNR for six different edge geometries: pristine ribbon (dashed black lines), single defect (red lines), and average conductance for 500 nm long aGNRs containing 30 defects (blue lines) Total DoS for pristine (dashed lines), and D1 and D2 are also shown in lower-left figures in a) and b) In c) and d) it is shown that radical passivation by means of pentagon-and heptagon-type defects di-hydrogenation, re-establish conductance profile in the former case and partialy in the last one. D1H and D2H denote the di-hydrogenated pentagon and heptagon, respectively. Edge defect topologies containing odd-membered rings are also shown in a) for a single pentagon defect, D1, and e) 2 heptagons and 1 pentagon defect, D3. (from (206)) f) panel shows the small-hole defect due to a dimer extraction, D4 Clar's sextet representation for each edge geometry, spatial representation of the transmission eigenchannel is plotted at the energy marked by an arrow in their respective conductance profile figures. In all cases ,
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