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Contribution à la modélisation par la méthode des éléments finis de composants hyperfréquences contrôlés optiquement.

Abstract : The numerical simulation of optically controlled microwave passive components raises the double problem of the high frequency and optical behaviors of the semiconductor enlightened by a laser beam.
Suggested modellings are based on the finite element method which allows a discretization of the wave equations and the taking into account of the optical injection by an equivalent permittivity area.
Bi- and three-dimensional formulations of the eigenvalues problem and high frequency propagation are presented, as well as the optical coupling.

The main part of the work concerns the carriers injection modelling in the semiconductor substrate subjected to a high frequency wave.
The enlightened substrate behaves like a plasma having a carriers concentration variation governed by a simplified model of ambipolar diffusion.
In order to avoid the nonphysical phenomena appearance called spurious modes, related to the numerical methods using the classical nodal finite element method and to obtain accurate results, we choose to use edge finite elements of a higher order.

The carried out developments are applied and checked on simple high frequency structures and on the particular case of the open microstrip line enlightened by a suitable wavelength and strong power laser.
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https://tel.archives-ouvertes.fr/tel-00422342
Contributor : Jean-Daniel Arnould <>
Submitted on : Tuesday, October 6, 2009 - 3:26:53 PM
Last modification on : Friday, November 6, 2020 - 4:03:19 AM
Long-term archiving on: : Wednesday, June 16, 2010 - 12:23:42 AM

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  • HAL Id : tel-00422342, version 1

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Jean-Daniel Arnould. Contribution à la modélisation par la méthode des éléments finis de composants hyperfréquences contrôlés optiquement.. Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2002. Français. ⟨tel-00422342⟩

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