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Diagnostics et modélisation d'un plasma basse pression gaz rares-fluor excité à 13.56 MHz

Abstract : A study has been undertaken of the plasma source of an "helicon" reactor which can be used for semiconductor etching. We used an Ar-He-F2 mixtures at pressures between 4 and 20 mT with variable compositions. Microwave interferometry at 68 GHz was used to measure electron density values that lie between 0.4 and 2 10^12 cm-3 according to pressure and RF conditions. With the aid of measured helium spectral line intensities we established a radiative collisional model of the discharge. It enabled us to characterise the electron density distribution function (eedf). A two-temperature was chosen to describe this eedf. The gas temperature found to be about 850 K was measured by laser absorption which allowed to measure the Ar 4s level densities and to validate the self-absorption technique. The fluorine lines kinetics was studied, and enabled the first measurements of the fluorine electronic excitation coefficients. These data together with the knowledge of the population channels for Ar and He excited levels show the limits of actinometryr applicability. A theoretical approach is presented to show the different processes responsible for the discharge maintenance and energy deposition.
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Submitted on : Tuesday, September 29, 2009 - 6:53:41 PM
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  • HAL Id : tel-00420859, version 1


Mustapha Elyaakoubi. Diagnostics et modélisation d'un plasma basse pression gaz rares-fluor excité à 13.56 MHz. Sciences de l'ingénieur [physics]. Université d'Orléans, 1991. Français. ⟨tel-00420859⟩



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