Oxidation threshold in silicon etching at cryogenic temperatures, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.24, issue.4, pp.1073-82, 2006. ,
DOI : 10.1116/1.2210946
URL : https://hal.archives-ouvertes.fr/hal-00365909
plasma, Journal of Physics D: Applied Physics, vol.38, issue.18, pp.3395-402, 2005. ,
DOI : 10.1088/0022-3727/38/18/012
URL : https://hal.archives-ouvertes.fr/hal-00707922
etching process, Journal of Micromechanics and Microengineering, vol.14, issue.2, pp.190-196, 2004. ,
DOI : 10.1088/0960-1317/14/2/004
URL : https://hal.archives-ouvertes.fr/hal-01057233
Role of sulfur atoms in microwave plasma etching of silicon, Journal of Applied Physics, vol.62, issue.4, pp.1459-68, 1987. ,
DOI : 10.1063/1.339652
Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density, Journal of Applied Physics, vol.51, issue.6, pp.3134-3140, 1980. ,
DOI : 10.1063/1.328060
On the use of actinometric emission spectroscopy in SF6-O2 radiofrequency discharges: Theoretical and experimental analysis, Plasma Chemistry and Plasma Processing, vol.29, issue.3, pp.239-53, 1985. ,
DOI : 10.1007/BF00615123
in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy, Journal of Physics D: Applied Physics, vol.39, issue.9, pp.1830-1875, 2006. ,
DOI : 10.1088/0022-3727/39/9/019
URL : https://hal.archives-ouvertes.fr/hal-00379622
/Ar plasmas, Journal of Applied Physics, vol.55, issue.1, pp.242-52, 1984. ,
DOI : 10.1063/1.332872
rf discharges by two???photon laser???induced fluorescence and optical emission spectroscopy, The Journal of Chemical Physics, vol.84, issue.5, pp.2668-74, 1986. ,
DOI : 10.1063/1.450339
Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nm, Journal of Applied Physics, vol.69, issue.2, pp.618-644, 1991. ,
DOI : 10.1063/1.347395
mixtures, Journal of Applied Physics, vol.75, issue.1, pp.104-118, 1994. ,
DOI : 10.1063/1.355897
discharge system. II. Microwave spectrum of the SO dimer, The Journal of Chemical Physics, vol.60, issue.12, pp.5005-5010, 1974. ,
DOI : 10.1063/1.1681015
with a new spectrometer for unstable molecules, Journal of Physics B: Atomic, Molecular and Optical Physics, vol.38, issue.3, pp.255-64, 2005. ,
DOI : 10.1088/0953-4075/38/3/009
Photoionization efficiency spectrum and ionization energy of S2O2, The Journal of Chemical Physics, vol.110, issue.1, pp.188-91, 1999. ,
DOI : 10.1063/1.478094
Rate constants at 298 k for the reactions SO+SO+M???(SO)2+M AND SO+(SO)2???SO2+S2O, Chemical Physics Letters, vol.76, issue.2, pp.322-326, 1980. ,
DOI : 10.1016/0009-2614(80)87032-1
Mass spectrometric study of SF6-N2 plasma during etching of silicon and tungsten, Plasma Chemistry and Plasma Processing, vol.66, issue.1, pp.27-47, 1990. ,
DOI : 10.1007/BF01460446
Gas-phase reactions in plasmas of SF6 with O2 in He, Plasma Chemistry and Plasma Processing, vol.16, issue.3, pp.263-80, 1988. ,
DOI : 10.1007/BF01020406
RF discharges, Journal of Physics D: Applied Physics, vol.24, issue.7, pp.1098-101, 1991. ,
DOI : 10.1088/0022-3727/24/7/011
DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products, Plasma Chemistry and Plasma Processing, vol.40, issue.2, pp.201-216, 1981. ,
DOI : 10.1007/BF00564581
radiofrequency discharge used for the etching of silicon, Journal of Physics D: Applied Physics, vol.19, issue.6, pp.991-1005, 1986. ,
DOI : 10.1088/0022-3727/19/6/014
Gas-phase reactions of SF5, SF2, and SOF with O(3 P): Their significance in plasma processing, Plasma Chemistry and Plasma Processing, vol.24, issue.3, pp.247-58, 1986. ,
DOI : 10.1007/BF00575131
SiOxFy passivation layer in silicon cryoetching, Journal of Applied Physics, vol.98, issue.10, p.104901, 2005. ,
DOI : 10.1063/1.2133896
URL : https://hal.archives-ouvertes.fr/hal-00098638
mixtures, Journal of Applied Physics, vol.52, issue.1, pp.162-169, 1981. ,
DOI : 10.1063/1.328468
An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.155, issue.3, pp.280-288, 1999. ,
DOI : 10.1016/S0168-583X(99)00451-6
Comparison of etching processes of silicon and germanium in SF6???O2 radio-frequency plasma, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.13, issue.2, pp.235-276, 1995. ,
DOI : 10.1116/1.588357
A model for the etching of silicon in SF6/O2 plasmas, Plasma Chemistry and Plasma Processing, vol.89, issue.1, pp.207-236, 1990. ,
DOI : 10.1007/BF01447127
Aspects of the chemistry of SF6/O2 plasmas, Plasma Chemistry and Plasma Processing, vol.6, issue.4, pp.483-96, 1989. ,
DOI : 10.1007/BF01023915
etching process, Journal of Micromechanics and Microengineering, vol.14, issue.2, pp.190-196, 2004. ,
DOI : 10.1088/0960-1317/14/2/004
URL : https://hal.archives-ouvertes.fr/hal-01057233
SiOxFy passivation layer in silicon cryoetching, Journal of Applied Physics, vol.98, issue.10, p.104901, 2005. ,
DOI : 10.1063/1.2133896
URL : https://hal.archives-ouvertes.fr/hal-00098638
Chemical topography analyses of silicon gates etched in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] high density plasmas, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.21, issue.2, pp.904-915, 2003. ,
DOI : 10.1116/1.1563255
Surface science aspects of etching reactions, Surface Science Reports, vol.14, issue.4-6, pp.162-269, 1992. ,
DOI : 10.1016/0167-5729(92)90009-Z
passivating chemistry for silicon cryogenic deep etching, Plasma Sources Science and Technology, vol.17, issue.4, p.45008, 2008. ,
DOI : 10.1088/0963-0252/17/4/045008
URL : https://hal.archives-ouvertes.fr/hal-00349344
Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density, Journal of Applied Physics, vol.51, issue.6, pp.3134-3140, 1980. ,
DOI : 10.1063/1.328060
plasma during silicon reactive ion etching, Journal of Applied Physics, vol.74, issue.1, pp.62-69, 1993. ,
DOI : 10.1063/1.355250
Comparison of etching processes of silicon and germanium in SF6???O2 radio-frequency plasma, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.13, issue.2, pp.235-276, 1995. ,
DOI : 10.1116/1.588357
Oxidation threshold in silicon etching at cryogenic temperatures, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.24, issue.4, pp.1073-82, 2006. ,
DOI : 10.1116/1.2210946
URL : https://hal.archives-ouvertes.fr/hal-00365909
Chlorine???enhanced F???atom etching of silicon, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.12, issue.3, pp.617-626, 1994. ,
DOI : 10.1116/1.578845
DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products, Plasma Chemistry and Plasma Processing, vol.40, issue.2, pp.201-216, 1981. ,
DOI : 10.1007/BF00564581
radiofrequency discharge used for the etching of silicon, Journal of Physics D: Applied Physics, vol.19, issue.6, pp.991-1005, 1986. ,
DOI : 10.1088/0022-3727/19/6/014
Gas-phase reactions of SF5, SF2, and SOF with O(3 P): Their significance in plasma processing, Plasma Chemistry and Plasma Processing, vol.24, issue.3, pp.247-58, 1986. ,
DOI : 10.1007/BF00575131
Gas-phase reactions in plasmas of SF6 with O2 in He, Plasma Chemistry and Plasma Processing, vol.16, issue.3, pp.263-80, 1988. ,
DOI : 10.1007/BF01020406
RF discharges, Journal of Physics D: Applied Physics, vol.24, issue.7, pp.1098-101, 1991. ,
DOI : 10.1088/0022-3727/24/7/011
Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Si, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.20, issue.4, pp.1195-201, 2002. ,
DOI : 10.1116/1.1479733
Analysis of the chemical composition and deposition mechanism of the SiO[sub x]???Cl[sub y] layer on the plasma chamber walls during silicon gate etching, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.22, issue.3, pp.624-659, 2004. ,
DOI : 10.1116/1.1710496
glow discharges: A kinetic model of the surface process, Journal of Applied Physics, vol.62, issue.5, pp.2050-2056, 1987. ,
DOI : 10.1063/1.339548