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Métallisation des mémoires Flash à base de NiSi et d'éléments d'alliages

Abstract : The aim of this study is to characterize the Pt influence on the formation of nickel silicides in the salicide process and especially on the low resistivity phase NiSi, that is believed to become the next silicide used as contacting material on source and drain region in flash memory transistors. We thus studied the nature, the sequence and the kinetics of the formed phases on various systems: firstly on the Ni1-xPtx/Si(100) (0% ≤ x ≤ 30%), and more especially on the Ni(13%Pt)/Si(100) system that presents very interesting properties for microelectronic devices. Two types of deposition techniques have been used and compared: layers deposited using a single Ni(13%Pt) alloyed target and co-deposited using two separated targets. Several in-situ characterization technique were coupled (x-ray diffraction and reflectivity, 4-points probe sheet resistance) in order to understand the mechanisms involved in this system. In particular, in-situ x-ray reflectivity experiments were performed using the synchrotron radiation (ESRF) and analyzed using the fast Fourier transform; these experiments show original results: the phase sequence is modified for the Ni(13%Pt). Finally, sheet resistance measurements have been performed on narrow lines to show the advantages and the limitations of this system.
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Submitted on : Thursday, July 30, 2009 - 2:37:49 PM
Last modification on : Thursday, March 15, 2018 - 4:56:06 PM
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  • HAL Id : tel-00408377, version 1



Loeizig Ehouarne. Métallisation des mémoires Flash à base de NiSi et d'éléments d'alliages. Matière Condensée [cond-mat]. Université Paul Cézanne - Aix-Marseille III, 2008. Français. ⟨tel-00408377⟩



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