Conception de transistors haute tension complémentaires en technologie 65nm sur substrat silicium sur isolant fin pour applications RF et conversion de puissance

Abstract : The growing telecommunication market is applicant of very efficient circuits (speed switching, broadband, and so on.), but also low consumption, especially in the case of portable systems. The SOI-CMOS has already demonstrated its potential to reduce consumption at the same switching speed, compared to CMOS silicon massive material, provided that the film SOI is sufficiently thin (less than or equal to the depth of junction source / drain). More recently, characterizing RF functions in this type of technology has shown that the SOI could be a good candidate to mix RF and digital functions. However, this type of integration called System On Chip cannot be complete without an integration of functions associated powers. The feasibility of incorporating LDMOS type high voltage components (BVds of about 15V) in a CMOS technology on SOI thin (<0.1 ¼m), their design and performance are studied in this thesis. As a first step, the different power technologies on silicon are presented, in particular the various applications referred, the types of existing components and the central problem introducing high voltage in a circuit: insulation between blocks. Then, in addition to the advantages of SOI technology, the value of SOI for applications such as power is demonstrated. In the last two parts, the design of high-voltage transistors on a thin SOI film is explained. Aspects of static and dynamic characterization, reliability and thermal energy are addressed. This allows us to conclude that such a technological solution may quite be industrialized and achieves the state of the art.
Document type :
Theses
Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2008. French


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Submitted on : Monday, June 8, 2009 - 11:11:37 AM
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Olivier Bon. Conception de transistors haute tension complémentaires en technologie 65nm sur substrat silicium sur isolant fin pour applications RF et conversion de puissance. Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2008. French. <tel-00392481>

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