, 106 II.4. Influence de l'oxyde d'indium sur la brasure, p.106
, 114 IV.2 Adaptation des dimensions de la bille d'indium: 114 IV.3. Contribution en capacité calorifique des différents matériaux : 115 IV.4. Partie expérimentale :2. Caractérisation par microscopie à force atomique, 122 IV.5. La réalisation du nouvel UBM (Ti/WN/Au) sur structures libérées :.. 125 IV.8. Conclusion, p.126
, 137 CHAPITRE 4 : La thermométrie par le silicium implanté 139 II.2. Modèles : 142 II.3. Etude de l'implantation et de la diffusion : 145 II.6.1. La simulation de l'implantation dans nos thermomètres, 146 II.6.4. Résultats des mesures SIMS (Secondary Ion Mass Spectrometry), p.150
, 165 V.4. Détermination des paramètres T 0 et R 0 : 165 V.5 Mesure de R (T) sur une matrice de 5 x 5 pixels (plaque PO9), p.174
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, 5 : Observation au MEB des plots Ti/Au après leurs gravure 3000Å
, Comparaison entre la plaque PO2 et PO9