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Propriétés électroniques et structurales du graphène sur carbure de silicium

Abstract : This work is devoted to theoretical and experimental studies of graphene on silicon carbide. Graphene consists of a single carbon plane arranged on a honeycomb lattice. Because of this peculiar lattice, ideal graphene exhibits outstanding electronic properties such as massless Dirac fermions close to the Fermi energy. From experimental point of view, a convenient way to synthetize graphene is the thermal decomposition of the hexagonal faces of a silicon carbide (SiC) crystal. In the present work, electronic and structural properties of graphene on SiC are studied by ab initio calculations and scanning tunneling microscopy. They are compared to the ideal graphene case. After an introduction on the graphene topic, we describe ab initio calculations (based on density functional theory) and scanning tunnelling microscopy which are the two methods used in this thesis. Then we present our different results for graphene on both surfaces of SiC (Si- and C-face, respectively). For the Si-face, we demonstrate the existence of a strong interaction between the substrate and the first carbon layer. This prevents any graphitic electronic properties for this layer (buffer layer). However, the graphitic nature of the film is recovered by the second and the third absorbed layers. For the C-face, we have analyzed by STM thin films made of few graphene layers. We observe superstructures which are interpreted as Moiré patterns due to a misorientation angle between consecutive layers. Ab initio calculations are used to demonstrate that a twisted bilayer presents a band structure with the linear dispersion characteristic of isolated graphene.
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Contributor : François Varchon <>
Submitted on : Monday, March 30, 2009 - 6:06:08 PM
Last modification on : Friday, December 18, 2020 - 1:10:04 PM
Long-term archiving on: : Friday, October 12, 2012 - 2:35:36 PM


  • HAL Id : tel-00371946, version 1




François Varchon. Propriétés électroniques et structurales du graphène sur carbure de silicium. Physique [physics]. Université Joseph-Fourier - Grenoble I, 2008. Français. ⟨tel-00371946⟩



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