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Développement de nanostructures à base de semiconducteurs III-Nitrures pour l'optoélectronique infrarouge

Fabien Guillot 1
1 NPSC - Nanophysique et Semiconducteurs
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
Abstract : This work focuses on the molecular-beam epitaxial growth and characterization of nanostructures based on nitride semiconductors (GaN, AlN and alloys) in order to develop advanced optoelectronic devices based on intraband transitions, towards the next generation of high-speed telecommunication systems. A first set of results reports on the growth of nitride thin layers, including AlGaN alloys. Our study has demonstrated that the growth of layers whose Al molar fraction stays below 35% requires an excess of Ga. For higher Al content, it is necessary to use In as a surfactant or to grow super-alloys GaN/AlN. Studies on doping these structures with Si have also been performed. We have then studied multilayered structures of Si-doped GaN/AlN quantum wells. They display p-polarized intersubband absorption peaks at wavelengths in the telecommunication range at room temperature. The effect of various growth and design parameters has been studied. Various characterizations were applied to the assessment of the internal electric field and the conduction band offset between GaN and AlN in our structures. About the fabrication of multilayered structures of Si-doped GaN/AlN quantum dots, we have adapted the growth techniques in order to minimize the size of the dots, to tune the intraband absorption within the telecommunication range. The absorption energy can be adjusted by modifying the amount of GaN in the dots, the growth temperature and the ripening time. Finally, these structures have been processed for the fabrication of optoelectronic devices. We have focused on devices based on absorption (quantum wells and quantum dots based photodetectors, electro-optical modulators) and based on the emission of infrared light at telecommunication wavelengths. The promising performance of these devices constitutes a first step towards the fabrication of telecommunication devices based on nitride semiconductors.
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Submitted on : Wednesday, March 4, 2009 - 7:58:38 PM
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  • HAL Id : tel-00365896, version 1



Fabien Guillot. Développement de nanostructures à base de semiconducteurs III-Nitrures pour l'optoélectronique infrarouge. Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2007. Français. ⟨tel-00365896⟩



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