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Diffusion des dopants dans les dispositifs de la microélectronique : codiffusion de l'arsenic et du phosphore dans le silicium, étude unidimensionnelle et bidimensionnelle.

Abstract : Si dopant diffusion in microelectronics devices has been studied in 1 and 2 dimensions. The codiffusion effects of As and P have been characterized for “drains” and “sources” fabrication of the latest transistor technology (90 nm). If these 2 dopants are concurrently located in Si, we observe an acceleration of As and P diffusion. This effect mainly depends on the As dose, and seems to be due to the modification of AsnV cluster characteristics and to an excess of vacancies in the coexistence area. Furthermore, we show that dopant diffusion can be studied in microelectronics devices in 2 dimensions using near field electrical (SCM, SSRM) and topographical (AFM) techniques. These techniques are complementary because of their different principles. They find applications in metrology and failure analysis.
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https://tel.archives-ouvertes.fr/tel-00353687
Contributor : Nicolas Rodriguez <>
Submitted on : Friday, January 16, 2009 - 10:33:26 AM
Last modification on : Thursday, March 15, 2018 - 4:56:06 PM
Long-term archiving on: : Tuesday, June 8, 2010 - 8:25:42 PM

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  • HAL Id : tel-00353687, version 1

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Nicolas Rodriguez. Diffusion des dopants dans les dispositifs de la microélectronique : codiffusion de l'arsenic et du phosphore dans le silicium, étude unidimensionnelle et bidimensionnelle.. Micro et nanotechnologies/Microélectronique. Université Paul Cézanne - Aix-Marseille III, 2008. Français. ⟨tel-00353687⟩

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