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Modélisation de l'effet tunnel à un électron dans les dispositifs à nanocristaux semiconducteurs : effet tunnel à un électron assisté par phonon

Abstract : Within the frame of a study of nanocrystal-based devices as nanocrystal flash memory or single electron transistor, this work aims at accurately modelling the tunnel transport between two nanocrystals, which requires to take into account the energy level broadening induced by the electron-phonon coupling. The vibrational modes in silicon nanocrystals of varying sizes have first been calculated using the Adiabatic Bond Charge Model (ABCM). The results obtained present a very good agreement with experimental Raman spectra. The density of states (DOS) of large nanocrystals has been compared to the bulk silicon DOS. It appears that the DOS are very close, except in specific frequency ranges where surface modes, which do not exist in bulk silicon, have been identified. The electron-phonon interaction has then been taken into account in the calculation of spectral function. The obtained electron-phonon scattering rates are much higher than the tunnel transfer rates: the interaction with phonons is enough to guarantee a sequential transport. The tunnel transfer between two nanocrystals has been modelled with these spectral functions. The current through a two-nanocrystals-based device has been calculated. The study of the influence of different parameters on this current shows a behaviour conform to expected results.
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https://tel.archives-ouvertes.fr/tel-00350414
Contributor : Audrey Valentin <>
Submitted on : Tuesday, January 6, 2009 - 4:12:23 PM
Last modification on : Friday, October 23, 2020 - 4:58:14 PM
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  • HAL Id : tel-00350414, version 1

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Audrey Valentin. Modélisation de l'effet tunnel à un électron dans les dispositifs à nanocristaux semiconducteurs : effet tunnel à un électron assisté par phonon. Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2008. Français. ⟨tel-00350414⟩

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