Abstract : The goal of this thesis was to evaluate the suitability of two semiconductors (InP:Fe and SPS:Te) for applications at infrared wavelengths in the field of optical telecommunications.
For the InP:Fe we did a systematic characterization of the photorefractive self focusing at two infrared wavelengths, taking into the account various parameters that play a role in this phenomenon (temperature, background illumination, doping, beam intensity). We are now able to control the self focusing and, taking into account the response times that we have measured, we believe that is possible to achieve and to control the interaction of two self focused beams on a microsecond time-scale. Nevertheless, even we know now the role played by the above mentioned parameters, a theoretical model is still needed in order to fully understand and control the self focusing. Our measures proved that the current models do not describe correctly this phenomenon.
On the other hand, we have found that in SPS the self focusing is described by the “classical” models; actually, these two materials have a complementary behaviour: the SPS has a slower response, but exhibits a stronger and easier controllable self focusing than the InP. Taking into account our results, we believe that both InP and SPS will prove to be useful in future applications.