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Fabrication top-down, caractérisation et applications de nanofils silicium

Abstract : This work focuses on the study of silicon nanowires made by a top-down approach. The context of the study is the miniaturisation of the components and the understanding of the transport in 1D systems.

Two fabrication approaches are studied: AFM lithography (Atomic Force Microscope) and e-beam lithography. The latter being more reproducible, the final devices are fabricated by this technique using a SOI substrate and multiple steps of etching and metallization.

Transport characterization of the Si nanowires allows us to highlight a depleted area at the interface Si/native SiO2. Using nanowires with different widths and lengths, we can determine the depletion width, the surface state density as well as the doping level of the nanowires. The evolution of the nanowires resistance with temperature is also investigated, showing a dependence associated with surface phonons scattering.

In the last chapter, three applications are described: a decoder, a current switch and a bio-sensor. The use of a local etching allows the modulation of the conduction band of the nanowires, opening the way to build a decoder using two local gates. Crossbar structures, where lateral gates which can derive the current in the different branches, lead to the fabrication of a current switch. Finally, thanks to the large surface to volume ratio in these structures, the nanowires are used to detect electrically the interactions between molecules (ovalbumine detection).
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Contributor : Francois Vaurette <>
Submitted on : Thursday, November 27, 2008 - 10:09:12 AM
Last modification on : Wednesday, January 20, 2021 - 3:02:02 PM
Long-term archiving on: : Monday, June 7, 2010 - 10:04:23 PM


  • HAL Id : tel-00342294, version 1


Francois Vaurette. Fabrication top-down, caractérisation et applications de nanofils silicium. Matière Condensée [cond-mat]. Université des Sciences et Technologie de Lille - Lille I, 2008. Français. ⟨tel-00342294⟩



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