Croissance d'hétérostructures non-polaires de GaN/AlN plan m sur 6h-SiC plan m

Benoît Amstatt 1
1 NPSC - Nanophysique et Semiconducteurs
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
Abstract : This work reports on the growth and the structural and optical properties of non-polar m-plane GaN/AlN heterostructures deposited on m-plane 6H-SiC by Plasma Assisted Molecular Beam Epitaxy.
We first studied AlN and GaN thick layers. The optimal growth conditions were achieved in metal-rich conditions. They both exhibit anisotropic surface morphology: stripped for AlN and slatted for GaN.
Next, we studied the growth of GaN/AlN heterostructures. GaN quantum wells are obtained in N-rich conditions whereas GaN quantum wires or quantum dots are formed in Ga rich conditions by Stranski-Krastanow growth mode. The shape of these GaN nanostructures is depending on the strain state of the AlN buffer layer. Optical studies revealed a strong reduction of the internal electric field in m-plane GaN/AlN heterostructures.

Finally, we focused on the shape evolution of wires and dots with the amount of GaN deposited. We demonstrated the existence of a dots to wires transition. It takes place above a critical size that can be controlled by the amount of GaN deposited or by the growth of superlattices.
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https://tel.archives-ouvertes.fr/tel-00336401
Contributor : Benoît Amstatt <>
Submitted on : Monday, November 3, 2008 - 8:11:29 PM
Last modification on : Tuesday, November 5, 2019 - 2:30:08 PM
Long-term archiving on: Monday, June 7, 2010 - 8:16:49 PM

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Benoît Amstatt. Croissance d'hétérostructures non-polaires de GaN/AlN plan m sur 6h-SiC plan m. Physique [physics]. Université Joseph-Fourier - Grenoble I, 2008. Français. ⟨tel-00336401⟩

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