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Instrumentation cryogénique bas bruit et large bande en technologie SiGe

Abstract : The presented work is dedicated to the investigation on the operation of bipolar technologies and, more particularly, SiGe BiCMOS technologies, for use at cryogenic temperature. In the first part of this report, the state of the art for bipolar transistors and for the electronic noises, encountered on these technologies at room and low temperatures, are thoroughly investigated. This approach is aimed towards the understanding of the experimentally observed behaviours of the SiGe technologies operating at temperatures ranging from 300 K to 4.2 K. The second part emphasizes on two realisations of cryogenic ASIC in standard SiGe BiCMOS technologies. The first one is a wide band (1 GHz) and low noise (1 nV/sqrtHz) amplifier operating at 77 K which was designed for the readout and characterisation of hot electron YBaCuO superconducting bolometers. The second realisation is an ASIC dedicated to the multiplexing and readout of SQUID arrays. For this device, the development and characterisation of the ultra low noise amplifier (0.2 nV/sqrtHz) with two time domain multiplexed accesses operating at 4.2 K are detailed.
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Contributor : Damien Prêle <>
Submitted on : Monday, October 20, 2008 - 11:05:30 PM
Last modification on : Wednesday, December 9, 2020 - 3:05:25 PM
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  • HAL Id : tel-00332421, version 1


Damien Prêle. Instrumentation cryogénique bas bruit et large bande en technologie SiGe. Micro et nanotechnologies/Microélectronique. Université Pierre et Marie Curie - Paris VI, 2006. Français. ⟨tel-00332421⟩



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