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Diodes électroluminescentes blanches monolithiques

Abstract : The aim of this work was to study and fabricate monolithic white light emitting diodes (LEDs) grown by molecular beam epitaxy (MBE) using NH3 as nitrogen source. The method proposed at the lab consist in inserting in the active zone of the LED some (Ga,In)N/GaN quantum wells emitting in the blue and yellow range. Even if the In content of the InxGa1-xN alloy is limited at 20-25%, the presence of an internal electric field permits to obtain wave lengths in all the visible spectrum. Unfortunately, this electric field decreases the oscillator strength of the quantum well for well width of more than 2 nm. The radiative efficiency of quantum wells emitting in the yellow is thus low compared to a quantum well emitting in the blue. Therefore, the yellow emission is a problem and we have had to try to counterbalance the electric field effects in order to increase the quantum efficiency of thick wells. In an other way, the power of MBE LEDs is lower than the EPVOM ones. One of the differences between the two growth techniques is the growth of p-type GaN. Different parameters have been tested in order to determine the right growth conditions to obtain good optoelectronic quality of p-type GaN layer. To finish, these different refinings will be checked by elaborating LEDs and in particular white monolithic LEDs with large spectra.
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Contributor : Amélie Dussaigne <>
Submitted on : Monday, October 20, 2008 - 5:31:59 PM
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  • HAL Id : tel-00332387, version 1



Amélie Dussaigne. Diodes électroluminescentes blanches monolithiques. Physique [physics]. Université Nice Sophia Antipolis, 2005. Français. ⟨tel-00332387⟩



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