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Interactions entre les plasmas de gravure à couplage inductif et les parois du réacteur

Abstract : Plasma-reactor walls interactions during etching processes by an inductively coupled plasma are an important cause of process drift in the semiconductor industry. By using a simple technique based on X-ray photoelectron spectroscopy analyses of the reactor walls coating, we have investigated the mechanism responsible for the formation of a deposit on the reactor walls after metal gate stack etching processes, and the associated reactor cleaning strategies. We show that, in the most typical etch and clean processes, reactor walls are inevitably exposed to F-based plasma leading to the formation and accumulation of AlFx residues on the Al2O3 reactor walls, hence to process drifts. These residues can be removed by SiCl4 or BCl3 based plasmas. We have also investigated a new cleaning/conditioning strategy of plasma etching reactors, in which the chamber walls are coated by a carbon-rich film between each wafer, allowing reproducible processing conditions to be achieved while preventing the AlFx issue. The influence of the reactor wall composition on the chemistry of chlorine-based plasmas is studied by numerous plasma diagnostic techniques and the importance of the cycling of etch by-products between the reactor walls and the gas phase is highlighted.
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Contributor : Raphaël Ramos <>
Submitted on : Wednesday, October 15, 2008 - 11:03:07 AM
Last modification on : Thursday, November 19, 2020 - 3:52:07 PM
Long-term archiving on: : Monday, June 7, 2010 - 7:44:51 PM


  • HAL Id : tel-00330664, version 1



Raphaël Ramos. Interactions entre les plasmas de gravure à couplage inductif et les parois du réacteur. Physique [physics]. Université Joseph-Fourier - Grenoble I, 2008. Français. ⟨tel-00330664⟩



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