Skip to Main content Skip to Navigation

Étude des propriétés physiques et nouvelle modélisation SPICE des transistors FLIMOS de puissance

Abstract : This thesis work deals with the design, the optimization and the modeling of a new generation of power MOSFETs, called FLIMOSFETs (FLoating Islands MOSFETs). The FLIMOS structure allows improving the on-resistance of the power MOSFETs. Compared to the Superjunction structure, the FLIMOS structure is interesting for low and medium breakdown voltages. Firstly, we have proposed an analytical approach to estimate the breakdown voltage, the specific on-resistance and the interelectrode capacitances of the FLIMOS structure. As a result, we define a "useful" range of the drift doping level in which the FLIMOS structure was optimized. Then, we have demonstrated that the Floating Island concept does not deteriorate the dynamic performances of the power MOS devices. Secondly, a new SPICE model for the low voltage power MOSFET is proposed for the first time. This model describes more accurately the transition region between the linear and saturation regions of the power MOSFETs and, in addition, takes into account the effects of the short channel on the threshold voltage and on the mobility. The SPICE parameters of this new model are the same than those of the SPICE level 3 model. Finally, the model was validated by the comparison of SPICE simulated and measured results.
Complete list of metadatas

Cited literature [62 references]  Display  Hide  Download
Contributor : Arlette Evrard <>
Submitted on : Thursday, August 7, 2008 - 2:03:50 PM
Last modification on : Friday, January 10, 2020 - 9:08:07 PM
Long-term archiving on: : Thursday, June 3, 2010 - 6:02:57 PM


  • HAL Id : tel-00309888, version 1


Abdelghafour Galadi. Étude des propriétés physiques et nouvelle modélisation SPICE des transistors FLIMOS de puissance. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2008. Français. ⟨tel-00309888⟩



Record views


Files downloads